Vertical metallically loaded polarization splitter and polarization-diversified optical receiver

Claim 2

A metallically loaded polarization-sensitive coupler, comprising: a lower waveguiding structure formed on a substrate; an upper waveguiding structure formed over said lower waveguiding structure and separated from said lower waveguiding structure by a coupling region; and a metallically loaded element formed in a loading area over said upper waveguiding structure and extending along an optical axis in said coupling region, said metallically loaded element being sufficiently close to a core portion of said upper waveguiding structure that said upper waveguiding structure only partially confines light propagating therein, whereby in said coupling region TE radiation propagating in said lower waveguiding structure is coupled from said lower waveguide structure into said upper waveguide structure to a degree greater than is TM radiation propagating in said lower waveguiding structure.

Claim 3

A polarized detector as recited in claim 1, further comprising: a first photo-detector formed over a first area adjacent to said loading area and along said optical axis.

Claim 4

A polarization-diversity receiver as recited in claim 2, further comprising: a second photo-detector formed over a second area of said upper waveguiding structure and along said optical axis, said first and second areas being separated by a coupling length along said optical axis; wherein a second coupling region is formed along said coupling length for coupling radiation between said upper and lower waveguiding structures.

Claim 5

A receiver as recited in claim 3, wherein both photo-detectors comprise photo-diodes.

Claim 6

A receiver as recited in claim 3, further comprising a rib formed in a portion of said lower waveguiding structure away from a receiver area including said loading area, said first area, said coupling length, and said second area, and wherein said upper waveguiding structure is absent in areas distant from said receiver area.

Claim 7

A receiver as recited in claim 5, wherein said upper and lower waveguiding structures are laterally undefined adjacent to said coupling length.

Claim 8

A coupler as recited in claim 1, wherein both said upper and lower waveguide structures comprise semiconductor materials.

Claim 9

A coupler as recited in claim 7, where said semiconductor materials comprise InP and materials lattice-matched thereto.

Claim 10

A polarization diversity receiver, comprising: a lower cladding layer for confining light; a lower core layer formed on said lower cladding layer for propagating light; a middle cladding layer formed on said lower guiding layer for only partially confining light; an upper core layer formed on said middle cladding layer for propagating light; an upper cladding layer formed on said upper core layer for only partially confining light; a metal region formed on a first area disposed on an optical axis on top of said upper cladding layer; a first optical detector formed on a second area disposed on said optical axis on top of said upper cladding layer; and a second optical detector formed on a third area disposed on said optical axis on top of said upper cladding layer and displaced from said first optical detector by an length sufficient to allow TM radiation propagating along said lower core layer to couple into said upper core layer.

Claim 11

A polarization diversity receiver, comprising: a lower cladding layer for confining light; a lower core layer formed on said lower cladding layer for propagating light; a middle cladding layer formed on said lower guiding layer for only partially confining light; an upper core layer formed on said middle cladding layer for propagating light; an upper cladding layer formed on said upper core layer for only partially confining light; a metal region formed on a first area disposed on an optical axis on top of said upper cladding layer; a first optical detector formed on a second area disposed on said optical axis on top of said upper cladding layer; and a second optical detector formed on a third area disposed on said optical axis on top of said upper cladding layer and displaced from said first optical detector by an length sufficient to allow TM radiation propagating along said lower core layer to couple into said upper core layer.

Claim 12

A receiver as recited in claim 9, wherein all said core and cladding layers and said detectors comprise semiconductors.