US5122851A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Trench JFET integrated circuit elements
Assignee: Grumman Corp
•
Filing: 1991-05-02
•
Granted: 1992-06-16
•
Expires: 2011-05-02
Abstract
Abstract A method and construction are disclosed to form a trench gate JFET transistor. The invention comprises forming a first trench in a semiconductor substrate, forming a gate channel about the trench and forming a conductive layer upon the surface of the gate channel. The conductive layer interfaces with the gate channel to form a p-n junction. Source and drain regions are formed adjacent to a trench and disposed in electrical contact with the gate channel. An integral capacitor may be added to the construction by forming a second trench, which extends through and excavates a portion of the first trench. The drain region is extended about the surface of the second trench to remain in electrical contact with the gate channel. A layer of insulating material is applied to the second trench, which is then filled with a body of conductive material. The conductive material is insulated from the conductive layer by the insulating layer.
Inventors
- 👤 Allen L. Solomon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 06:35
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/051; H10D30/0512; H10D30/80; H10D30/83; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D84/00; H10D84/80; H10D84/811; H10D84/817; H10D84/87
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
141 words
A trench gate JFET comprising: a first trench formed in a semiconductor substrate of a first conductivity type, said first trench being of sufficient depth to mitigate the generation of 1/f noise; a gate channel of the first conductivity type formed about the first trench; a conductive layer formed of a second conductivity type within the first trench upon said gate channel; source and drain regions of the first conductivity type formed upon the semiconductor substrate surface adjacent opposite sides of said first trench; and a first region of doped material formed within the substrate about said source and drain regions and said gate channel, said first region of doped material being formed of the second conductivity type, said first region of doped material being of sufficient thickness to isolate the source region, drain region and gate channel from the substrate.
Claim 2
Dependent Claim
141 words
A trench gate JFET comprising: a first trench formed in a semiconductor substrate of a first conductivity type, said first trench being of sufficient depth to mitigate the generation of 1/f noise; a gate channel of the first conductivity type formed about the first trench; a conductive layer formed of a second conductivity type within the first trench upon said gate channel; source and drain regions of the first conductivity type formed upon the semiconductor substrate surface adjacent opposite sides of said first trench; and a first region of doped material formed within the substrate about said source and drain regions and said gate channel, said first region of doped material being formed of the second conductivity type, said first region of doped material being of sufficient thickness to isolate the source region, drain region and gate channel from the substrate.
Claim 3
Dependent Claim
36 words
The trench gate JFET as recited in claim 1 wherein said substrate is formed of p-type silicon and said first doped region is formed of n+type material and the gate channel is formed of n-type material.
Claim 4
Dependent Claim
25 words
The trench gate JFET as recited in claim 1 further comprising a body of insulating material formed within said first trench upon said conductive layer.
Claim 5
Dependent Claim
162 words
An integral trench gate JFET transistor/capacitor comprising: a first trench formed in a semiconductor substrate of a first conductivity type; a gate channel of a second conductivity type formed about the first trench; a conductive layer of the first conductivity type formed about the first trench upon said gate channel; a second trench formed within the substrate, said second trench extending through and excavating a portion of said first trench; a layer of insulating material formed about a substantial portion of said second trench; a body of conductive material disposed within said second trench, said body of conductive material being isolated from said conductive layer by said insulating layer; source and drain regions of the second conductivity type semiconductor adjacent said first and second trenches, respectively, said source and drain regions each being in contact with said gate channel; and wherein an output taken from the body of conductive material is representative of a capacitor in series with the transistor drain region.
Claim 6
Dependent Claim
162 words
An integral trench gate JFET transistor/capacitor comprising: a first trench formed in a semiconductor substrate of a first conductivity type; a gate channel of a second conductivity type formed about the first trench; a conductive layer of the first conductivity type formed about the first trench upon said gate channel; a second trench formed within the substrate, said second trench extending through and excavating a portion of said first trench; a layer of insulating material formed about a substantial portion of said second trench; a body of conductive material disposed within said second trench, said body of conductive material being isolated from said conductive layer by said insulating layer; source and drain regions of the second conductivity type semiconductor adjacent said first and second trenches, respectively, said source and drain regions each being in contact with said gate channel; and wherein an output taken from the body of conductive material is representative of a capacitor in series with the transistor drain region.
Claim 7
Dependent Claim
29 words
An integral trench gate JFET transistor/capacitor as recited in claim 4 wherein said drain region extends about said second trench from a substrate upper surface to the gate channel.
Claim 8
Dependent Claim
69 words
An integral trench gate JFET transistor/capacitor as recited in claim 4 further comprising a first region of doped material formed within the substrate about said source and drain regions and said gate channel, said first region of doped material being formed of the second conductivity type, said first region of doped material being of sufficient thickness to isolate the source region, drain region and gate channel from the substrate.
References Cited (Backward Citations)
JPS5213781A
Cited
JPS5329679A
Cited
JPS5469388A
Cited
GB2109991A
Cited
US4684968A
Cited
US4633086A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-06-16 | 1995-12-16 | 1996-06-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-06-16 | 1999-12-16 | 2000-06-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-06-16 | 2003-12-16 | 2004-06-16 | $7700.00 | Window Closed / Lapsed |