US5120664A
Expired / Lapsed
US
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Method of making an infrared imaging device
Assignee: Mitsubishi Electric Corp
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Filing: 1991-06-18
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Granted: 1992-06-09
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Expires: 2011-06-18
Abstract
Abstract An infrared imaging device includes an infrared detector element having a pin structure which detects infrared rays 8 to 12 macrons in wavelength. The pin structure comprises a multiquantum well structure as an intrinsic layer including a plurality of Al y Ga 1-y As quantum well layers sandwiched by respective Al x Ga 1-x As quantum barrier layers (x>y) and a p type Al x Ga 1-x As layer and an n type Al x Ga 1-x As layer sandwiching the intrinsic layer. An infrared imaging device includes a plurality of picture units, each picture unit including an infrared detector element and a corresponding GaAs FET having a source region connected with the n layer of the infrared detector element on the same substrate. The picture unit and corresponding FET may be monolithically integrated on the same substrate with an n type channel in the substrate interconnecting the picture unit and the corresponding FET.
Inventors
- 👤 Toshio Murotani
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 21:17
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/18; H10F39/184
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
108 words
A production method for an infrared imaging device including: etching a plurality of grooves extending in the [011] direction and having V-shaped cross-sections on a compound semiconductor of [100] orientation, thereby providing a plurality of [111]A faces forming an angle of 45±15 degrees with respect to the surface of said substrate; and successively epitaxially growing an n type Al x Ga 1-x As layer, a multi-quantum well structure comprising a plurality of Al y Ga 1-y As quantum well layers sandwiched by respective type Al x Ga 1-x As quantum barrier layers (x>y) and a p type Al x Ga 1-x As layer on said plurality of faces.
Claim 2
Dependent Claim
108 words
A production method for an infrared imaging device including: etching a plurality of grooves extending in the [011] direction and having V-shaped cross-sections on a compound semiconductor of [100] orientation, thereby providing a plurality of [111]A faces forming an angle of 45±15 degrees with respect to the surface of said substrate; and successively epitaxially growing an n type Al x Ga 1-x As layer, a multi-quantum well structure comprising a plurality of Al y Ga 1-y As quantum well layers sandwiched by respective type Al x Ga 1-x As quantum barrier layers (x>y) and a p type Al x Ga 1-x As layer on said plurality of faces.
Claim 3
Dependent Claim
75 words
A production method for an infrared imaging device as defined in claim 1 including etching said plurality of grooves by producing an Si 3 N 4 film having an aperture of 10 micron width on said (100) substrate; etching using said Si 3 N 4 film as a mask; removing said Si 3 N 4 layer; and producing V-shaped cross-sections having an angle of 45±15 degrees with respect to the surface of the (100) substrate.
Claim 4
Dependent Claim
43 words
A production method for an infrared imaging device as defined in claim 1, wherein said substrate is GaAs including etching said grooves with an etchant containing H 2 SO 4 :H 2 O 2 :H 2 O in a ratio of about 5:1:1.
Claim 5
Dependent Claim
41 words
A production method for an infrared imaging device as defined in claim 1 including epitaxially growing the n type, multi-quantum well, and p type layers by MOCVD at a pressure of about 0.1 atmospheres and a temperature of about 750° C.
Claim 6
Dependent Claim
42 words
A production method for an infrared imaging device as defined in claim 1 including alternately growing Al x Ga 1-x As layers about 300 angstroms thick and Al y Ga 1-y As layers about 40 angstroms thick as the multiquantum well structure.
Claim 7
Dependent Claim
30 words
A production method for an infrared imaging device as defined in claim 1, including growing the quantum well and quantum barrier layers with x about 0.3 and y about 0.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-06-09 | 1995-12-09 | 1996-06-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-06-09 | 1999-12-09 | 2000-06-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-06-09 | 2003-12-09 | 2004-06-09 | $7700.00 | Window Closed / Lapsed |