US5120134A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Exposure system including a device for analyzing an affect of a wafer resist upon a mark signal
Assignee: Canon Inc
•
Filing: 1991-03-26
•
Granted: 1992-06-09
•
Expires: 2011-03-26
Abstract
Abstract An exposure system for exposing a wafer coated with a resist to a mask is disclosed. The system includes a photoelectric converting device for photoelectrically converting, through a detection optical system, an alignment mark formed on the wafer; an analyzing device for analyzing an affect of the resist on the wafer to a mark signal from the photoelectric converting device; and a control device for controlling the position of the wafer in relation to the mask, by using the mark signal from the photoelectric converting device and a result of analysis by the analyzing device.
Inventors
- 👤 Masao Kosugi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 20:02
CPC Classifications
G; G03; G03F; G03F9/00; G03F9/70
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
152 words
An exposure system for exposing a wafer coated with a resist, to a mask, said system comprising: a projection optical system for projecting a pattern of the mask to the wafer to print the mask pattern on the resist of the wafer; a first detector for photoelectrically detecting an alignment mark formed on the wafer through said projection optical system to produce a mark signal; a second detector for photoelectrically detecting the wafer, without using said projection optical system, to produce a detection signal; analyzing means for analyzing an affect of the resist of the wafer upon the mark signal produced by said first detector, on the basis of the detection signal produced by said second detector; and control means for controlling the position of the wafer in relation to the mask, in accordance with the mark signal produced by said first detector and a result of analysis by said analyzing means.
Claim 2
Dependent Claim
152 words
An exposure system for exposing a wafer coated with a resist, to a mask, said system comprising: a projection optical system for projecting a pattern of the mask to the wafer to print the mask pattern on the resist of the wafer; a first detector for photoelectrically detecting an alignment mark formed on the wafer through said projection optical system to produce a mark signal; a second detector for photoelectrically detecting the wafer, without using said projection optical system, to produce a detection signal; analyzing means for analyzing an affect of the resist of the wafer upon the mark signal produced by said first detector, on the basis of the detection signal produced by said second detector; and control means for controlling the position of the wafer in relation to the mask, in accordance with the mark signal produced by said first detector and a result of analysis by said analyzing means.
Claim 3
Dependent Claim
23 words
A system according to claim 1, wherein each of said analyzing means and said control means includes a stage for moving the wafer.
Claim 4
Dependent Claim
58 words
A system according to claim 2, wherein said control means comprises a signal processing system for processing the mark signal produced by said first detector and wherein said analyzing means comprises a simulator for effecting simulation related to said projection optical system and said signal processing system, for determining the affect of the resist upon the mark signal.
Claim 5
Dependent Claim
43 words
A system according to claim 3, wherein said second detector comprises a laser scanning microscope which uses light of substantially the same wavelength range as light projected by said projection optical system for printing the mask pattern on the resist of the wafer.
Claim 6
Dependent Claim
170 words
An exposure system for exposing a wafer having a resist, to a mask, said system comprising: a coater for applying the resist to the wafer; a projection optical system for projecting a pattern of the mask to the wafer to print the mask pattern on the resist of the wafer; a first detector for photoelectrically detecting an alignment mark formed on the wafer through said projection optical system to produce a mark signal; a second detector for photoelectrically detecting the wafer, without using said projection optical system, to produce a detection signal; analyzing means for analyzing an affect of the resist of the wafer upon the mark signal produced by said first detector, said analyzing means comprising means for selectively examining the wafer covered by the resist and the wafer not covered by the resist; and control means for controlling the position of the wafer in relation to the mask, in accordance with a mark signal produced by said first detector and a result of analysis by said analyzing means.
Claim 7
Dependent Claim
170 words
An exposure system for exposing a wafer having a resist, to a mask, said system comprising: a coater for applying the resist to the wafer; a projection optical system for projecting a pattern of the mask to the wafer to print the mask pattern on the resist of the wafer; a first detector for photoelectrically detecting an alignment mark formed on the wafer through said projection optical system to produce a mark signal; a second detector for photoelectrically detecting the wafer, without using said projection optical system, to produce a detection signal; analyzing means for analyzing an affect of the resist of the wafer upon the mark signal produced by said first detector, said analyzing means comprising means for selectively examining the wafer covered by the resist and the wafer not covered by the resist; and control means for controlling the position of the wafer in relation to the mask, in accordance with a mark signal produced by said first detector and a result of analysis by said analyzing means.
Claim 8
Dependent Claim
23 words
A system according to claim 5, wherein each of said analyzing means and said control means includes a stage for moving the wafer.
Claim 9
Independent Claim
217 words
A method, for use with an exposure system including a projection optical system for exposing a wafer having an alignment mark and a resist to a mask pattern, for manufacture of semiconductor devices, said method comprising the steps of: placing the wafer on a first stage; photoelectrically detecting the wafer placed on the first stage, without using the projection optical system, to produce a detection signal; predicting, by using an analyzer, at least one of an affect of the resist of the wafer, and an affect of a surface shape of the wafer, upon a mark signal to be obtained as a result of photoelectric detection of the alignment mark of the wafer through the projection optical system, on the basis of the detection signal produced; placing the wafer on a second stage; photoelectrically detecting the alignment mark of the wafer placed on the second stage through the projection optical system, to produce an actual mark signal; controlling the position of the second stage on the basis of the mark signal actually produced and on the basis of a result of the prediction, to align the wafer with respect to the mask pattern; and exposing the wafer to the mask pattern through the projection optical system to print the mask pattern on the resist of the wafer.
Claim 10
Independent Claim
217 words
A method, for use with an exposure system including a projection optical system for exposing a wafer having an alignment mark and a resist to a mask pattern, for manufacture of semiconductor devices, said method comprising the steps of: placing the wafer on a first stage; photoelectrically detecting the wafer placed on the first stage, without using the projection optical system, to produce a detection signal; predicting, by using an analyzer, at least one of an affect of the resist of the wafer, and an affect of a surface shape of the wafer, upon a mark signal to be obtained as a result of photoelectric detection of the alignment mark of the wafer through the projection optical system, on the basis of the detection signal produced; placing the wafer on a second stage; photoelectrically detecting the alignment mark of the wafer placed on the second stage through the projection optical system, to produce an actual mark signal; controlling the position of the second stage on the basis of the mark signal actually produced and on the basis of a result of the prediction, to align the wafer with respect to the mask pattern; and exposing the wafer to the mask pattern through the projection optical system to print the mask pattern on the resist of the wafer.
References Cited (Backward Citations)
JPS60120360A
Cited
EP0163199A2
Cited
US4886974A
Cited
US4795261A
Cited
US4834540A
Cited
US4952060A
Cited
US4971444A
Cited
US4906852A
Cited
US4962318A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-06-09 | 1995-12-09 | 1996-06-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-06-09 | 1999-12-09 | 2000-06-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-06-09 | 2003-12-09 | 2004-06-09 | $7700.00 | Window Closed / Lapsed |