US5118286A
Expired / Lapsed
US
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Closed loop method and apparatus for preventing exhausted reactant gas from mixing with ambient air and enhancing repeatability of reaction gas results on wafers
Assignee: Amtech Systems Inc
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Filing: 1991-01-17
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Granted: 1992-06-02
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Expires: 2011-01-17
Abstract
Abstract Mixing of spent reactant gases with ambient air inside a semiconductor wafer fabrication facility is avoided and consequently corrosion of a scavenger box in a wafer fabrication facility is avoided. Repeatability of reaction gas results on wafers in a process tube is improved by maintaining precisely constant pressure in the wafer processing tube, which is operated close to ambient atmospheric pressure. This is accomplished by positioning an exhaust tube downstream from the wafers in the processing tube at a location that results in a uniform, repeatable reaction gas flow pattern between the wafers. Pressures at or near that point are measured by a differential manometer referenced to ambient atmospheric pressure to produce a pressure-indicating signal. The pressure indicating signal is electronically compared with a preset constant signal representative of the desired constant pressure at the pressure measurement point to produce an error signal. The error signal is used to continuously vary the position of an exhaust valve in the exhaust tube and thereby maintain the measured pressure constant despite variations in ambient atmospheric pressure and variations in an exhaust gas scrubber system coupled to the exhaust tube.
Inventors
- 👤 Michael C. Sarin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 10:38
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C30; C30B; C30B25/00; C30B25/02; C30B25/14; C30B31/00; C30B31/06; C30B31/16; F; F27; F27D; F27D17/00; F27D17/20
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
165 words
A method of operating a semiconductor wafer processing furnace comprising the steps of: a. placing a plurality of wafers in a reactor chamber associated with the furnace; b. moving reaction gas through the reactor chamber and between the wafers in the reactor chamber; c. placing an inlet of an exhaust tube at a location in the reactor chamber that results in a repeatable gas flow pattern through the wafers; d. moving spent reaction gas into the inlet of the exhaust tube and through the exhaust tube and an exhaust valve into an exhaust scrubber system; e. measuring gas pressure in the reactor chamber at a location near the inlet of the exhaust tube by means of a differential manometer that precisely references the measured gas pressure to ambient atmospheric pressure and producing a pressure-indicating signal representative of the measured gas pressure; and f. controlling the exhaust valve in response to the pressure-indicating signal to cause the measured gas pressure to have a preselected constant value.
Claim 2
Independent Claim
165 words
A method of operating a semiconductor wafer processing furnace comprising the steps of: a. placing a plurality of wafers in a reactor chamber associated with the furnace; b. moving reaction gas through the reactor chamber and between the wafers in the reactor chamber; c. placing an inlet of an exhaust tube at a location in the reactor chamber that results in a repeatable gas flow pattern through the wafers; d. moving spent reaction gas into the inlet of the exhaust tube and through the exhaust tube and an exhaust valve into an exhaust scrubber system; e. measuring gas pressure in the reactor chamber at a location near the inlet of the exhaust tube by means of a differential manometer that precisely references the measured gas pressure to ambient atmospheric pressure and producing a pressure-indicating signal representative of the measured gas pressure; and f. controlling the exhaust valve in response to the pressure-indicating signal to cause the measured gas pressure to have a preselected constant value.
Claim 3
Dependent Claim
44 words
The method of claim 1 wherein step (f) includes comparing the pressure-indicating signal to a signal indicative of the preselected constant value and producing an error signal, and controlling the degree to which the exhaust valve is open in response to the error signal.
Claim 4
Dependent Claim
71 words
The method of claim 2 including passing the exhaust tube through a scavenger box, whereby corrosion of the scavenger box by spent reaction gas is avoided, and repeatability of results of the reaction gas on the wafers is improved by maintaining the measured gas pressure constant despite variations in ambient atmospheric pressure and despite variations in pressure in an exhaust gas scrubber system receiving spent reaction gas from the exhaust tube.
Claim 5
Dependent Claim
51 words
The method of claim 3 wherein the reactor chamber includes a horizontal cantilever reactor tube horizontally moveable into and out of a fixed furnace tube, step (a) including placing the wafers in the cantilever reactor tube and then moving the cantilever reactor tube into the furnace tube in sealed relationship thereto.
Claim 6
Dependent Claim
30 words
The method of claim 2 wherein step (f) includes controlling the exhaust valve with sufficient precision to control the measured pressure to within approximately 0.01 torr of ambient atmospheric pressure.
Claim 7
Independent Claim
163 words
A method of operating a semiconductor wafer processing furnace system comprising the steps of: a. placing at least one wafer in a reactor chamber associated with the furnace; b. moving reaction gas through the reactor chamber and around the wafer in the reactor chamber; c. placing an inlet of an exhaust tube at a location in the reactor chamber that results in a repeatable gas flow pattern around the wafer; d. moving spent reaction gas into the inlet of the exhaust tube and through the exhaust tube into an exhaust scrubber system; e. measuring gas pressure at a predetermined location in the reactor chamber by means of a differential manometer that precisely references the measured gas pressure to ambient atmospheric pressure and producing a pressure-indicating signal representative of the measured gas pressure; and f. controlling flow of the spent reaction gas through the exhaust tube in response to the pressure-indicating signal to cause the measured gas pressure to have a preselected constant value.
Claim 8
Independent Claim
163 words
A method of operating a semiconductor wafer processing furnace system comprising the steps of: a. placing at least one wafer in a reactor chamber associated with the furnace; b. moving reaction gas through the reactor chamber and around the wafer in the reactor chamber; c. placing an inlet of an exhaust tube at a location in the reactor chamber that results in a repeatable gas flow pattern around the wafer; d. moving spent reaction gas into the inlet of the exhaust tube and through the exhaust tube into an exhaust scrubber system; e. measuring gas pressure at a predetermined location in the reactor chamber by means of a differential manometer that precisely references the measured gas pressure to ambient atmospheric pressure and producing a pressure-indicating signal representative of the measured gas pressure; and f. controlling flow of the spent reaction gas through the exhaust tube in response to the pressure-indicating signal to cause the measured gas pressure to have a preselected constant value.
Claim 9
Independent Claim
181 words
A system for operating a semiconductor wafer processing furnace, comprising in combination: a. reactor chamber associated with the furnace for holding at lease one wafer; b. means for moving reaction gas through the reactor chamber and around the wafers in the reactor chamber; c. an exhaust tube having an inlet at a location inside the reactor chamber that results in a repeatable gas flow pattern around the wafer, the exhaust tube passing through a wall of the reactor chamber; d. means for moving spent reaction gas into the inlet of the exhaust tube and through the exhaust tube into an exhaust scrubber system; e. a differential manometer connected to measure gas pressure in the reactor chamber at a predetermined location in the reactor chamber, the differential manometer precisely referencing the measured gas pressure to ambient atmospheric pressure and producing a pressure-indicating signal representative of the measured gas pressure; and f. means for controlling the flow of spent reaction gas through the exhaust tube in response to the pressure-indicating signal to cause the measured gas pressure to have a preselected constant value.
Claim 10
Independent Claim
181 words
A system for operating a semiconductor wafer processing furnace, comprising in combination: a. reactor chamber associated with the furnace for holding at lease one wafer; b. means for moving reaction gas through the reactor chamber and around the wafers in the reactor chamber; c. an exhaust tube having an inlet at a location inside the reactor chamber that results in a repeatable gas flow pattern around the wafer, the exhaust tube passing through a wall of the reactor chamber; d. means for moving spent reaction gas into the inlet of the exhaust tube and through the exhaust tube into an exhaust scrubber system; e. a differential manometer connected to measure gas pressure in the reactor chamber at a predetermined location in the reactor chamber, the differential manometer precisely referencing the measured gas pressure to ambient atmospheric pressure and producing a pressure-indicating signal representative of the measured gas pressure; and f. means for controlling the flow of spent reaction gas through the exhaust tube in response to the pressure-indicating signal to cause the measured gas pressure to have a preselected constant value.
Claim 11
Dependent Claim
98 words
The system of claim 7 including means for comparing the pressure-indicating signal to a signal indicative of the preselected constant value and producing an error signal, and controlling the flow of the spent reaction gas in response to the error signal, whereby corrosion of a scavenger box by spent reaction gas is avoided, and repeatability of results of the reaction gas on the wafers is improved by maintaining the measured gas pressure constant despite variations in ambient atmospheric pressure and despite variations in pressure in an exhaust gas scrubber receiving the spent reaction gas from the exhaust tube.
Claim 12
Dependent Claim
40 words
The system of claim 8 wherein the reactor chamber includes a horizontal cantilever reactor tube horizontally moveable into and out of a fixed furnace tube, and means for engaging the cantilever reactor tube in sealed relationship with the furnace tube.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-06-02 | 1995-12-02 | 1996-06-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-06-02 | 1999-12-02 | 2000-06-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-06-02 | 2003-12-02 | 2004-06-02 | $7700.00 | Window Closed / Lapsed |