US5116331A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Pressure transducer and system for cryogenic environments
Assignee: National Aeronautics and Space Administration
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Filing: 1991-04-23
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Granted: 1992-05-26
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Expires: 2011-04-23
Abstract
Abstract A silicon pressure die is bonded to a borosilicate substrate above a pneumatic port. A Wheatstone bridge circuit is formed on the silicon pressure die and has bridge elements of silicon doped with boron to a deposit density level of approximately 1x1019-1021 boron/cm3. A current source is provided to excite the Wheatstone bridge circuit. In addition, a temperature sensor is provided to provide temperature readings.
Inventors
- 👤 John J. Chapman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 16:37
CPC Classifications
G; G01; G01L; G01L19/00; G01L19/0092; G01L27/00; G01L27/002; G01L9/00; G01L9/0041; G01L9/0051; G01L9/0052; G01L9/0054
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
71 words
A pressure sensor for use below -55° C., comprising: a substrate composed of borosilicate, said borosilicate substrate having a pneumatic port passing therethrough; a silicon pressure die mounted on said borosilicate substrate above the pneumatic port; a Wheatstone bridge circuit formed on said silicon die, said Wheatstone bride circuit comprising bridge elements of silicon doped with boron to a dopant density level of approximately 1×10 19 -10 21 boron/cm 3 .
Claim 2
Dependent Claim
71 words
A pressure sensor for use below -55° C., comprising: a substrate composed of borosilicate, said borosilicate substrate having a pneumatic port passing therethrough; a silicon pressure die mounted on said borosilicate substrate above the pneumatic port; a Wheatstone bridge circuit formed on said silicon die, said Wheatstone bride circuit comprising bridge elements of silicon doped with boron to a dopant density level of approximately 1×10 19 -10 21 boron/cm 3 .
Claim 3
Dependent Claim
22 words
The pressure sensor according to claim 1, wherein the dopant density level of the bridge elements is 1.3×10 19 boron/cm 3 .
Claim 4
Dependent Claim
31 words
The pressure sensor according to claim 1, wherein said Wheatstone bridge circuit further comprises aluminum interconnects bonded to said silicon pressure die and electrically connected to the doped silicon bridge elements.
Claim 5
Dependent Claim
17 words
The pressure sensor according to claim 1, further comprising a temperature sensor bonded to said borosilicate substrate.
Claim 6
Dependent Claim
22 words
The pressure sensor according to claim 1, wherein said silicon pressure die is bonded to said borosilicate substrate by a glass epoxy.
Claim 7
Dependent Claim
21 words
The pressure sensor according to claim 1, wherein said silicon pressure die is bonded to said borosilicate substrate by a polyimide.
Claim 8
Dependent Claim
17 words
The pressure sensor according to claim 1, wherein said pressure die is electrostatically bonded to said substrate.
Claim 9
Dependent Claim
20 words
The pressure sensor according to claim 7, further comprising means for increasing an output current of the Wheatstone bridge circuit.
Claim 10
Dependent Claim
78 words
A pressure sensor array system for use below -55° C. comprising: a borosilicate substrate having a plurality of pneumatic ports therethrough; a plurality of sensors mounted on said borosilicate substrate, one sensor above each pneumatic port, each sensor comprising a silicone pressure die and a Wheatstone bridge circuit formed on said silicon die, each Wheatstone bridge circuit comprising bridge elements of silicon doped with boron to a dopant level of approximately 1×10 19 -10 21 boron/cm 3 .
Claim 11
Dependent Claim
78 words
A pressure sensor array system for use below -55° C. comprising: a borosilicate substrate having a plurality of pneumatic ports therethrough; a plurality of sensors mounted on said borosilicate substrate, one sensor above each pneumatic port, each sensor comprising a silicone pressure die and a Wheatstone bridge circuit formed on said silicon die, each Wheatstone bridge circuit comprising bridge elements of silicon doped with boron to a dopant level of approximately 1×10 19 -10 21 boron/cm 3 .
Claim 12
Dependent Claim
23 words
The pressure sensor array system according to claim 9, wherein the pneumatic ports and said pressure sensors are arranged in a circular array.
Claim 13
Dependent Claim
15 words
The pressure sensor array system according to claim 9, further comprising a metal support base.
Claim 14
Dependent Claim
18 words
The pressure sensor array system according to claim 9, wherein said substrate is mounted on an electronic enclosure.
Claim 15
Dependent Claim
24 words
The pressure sensor array system according to claim 9, wherein the dopant density level of the bridge elements is 1.3×10 19 boron/cm 3 .
Claim 16
Dependent Claim
33 words
The pressure sensor array system according to claim 9, wherein said Wheatstone bridge circuit further comprises aluminum interconnects bonded to said silicon pressure die and electrically connected to the doped silicon bridge elements.
Claim 17
Dependent Claim
19 words
The pressure sensor array system according to claim 9, further comprising a temperature sensor bonded to said borosilicate substrate.
Claim 18
Dependent Claim
24 words
The pressure sensor array system according to claim 9, wherein said silicon pressure die is bonded to said borosilicate substrate by a glass epoxy.
Claim 19
Dependent Claim
23 words
The pressure sensor array system according to claim 9, wherein said silicon pressure die is bonded to said borosilicate substrate by a polyimide.
Claim 20
Dependent Claim
19 words
The pressure sensor array system according to claim 9, wherein said pressure die is electrostatically bonded to said substrate.
References Cited (Backward Citations)
US3930412A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-05-26 | 1995-11-25 | 1996-05-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-05-26 | 1999-11-25 | 2000-05-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-05-26 | 2003-11-25 | 2004-05-26 | $7700.00 | Window Closed / Lapsed |