US5111271A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device using standard cell system
Assignee: Toshiba Corp
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Filing: 1990-06-25
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Granted: 1992-05-05
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Expires: 2010-06-25
Abstract
Abstract A semiconductor device formed by using a standard cell system is a semiconductor device using a multi-layered wiring system. At this time, inter-cell wirings for electrically connecting different standard cells are formed of only a conductive layer which is disposed above a conductive layer constituting intra-cell wirings of the standard cells. Connection between the inter-cell wirings is made above an occupied area of the standard cells on the semiconductor substrate so as to eliminate a channel region.
Inventors
- 👤 Hiroshi Hatada
- 👤 Shojiro Mori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 20:01
CPC Classifications
H; H10; H10D; H10D89/00; H10D89/10
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
229 words
A semiconductor device comprising: a plurality of standard cells; a first array, arranged in a first direction, having some of the plurality of standard cells on a common level; a second array, arranged in the first direction adjacent to the first array, having others of the plurality of standard cells on the common level; first and second power lines implemented by a first conductive layer on a second level above the standard cells and extending in the first direction, for operating the standard cells; a first wiring implemented by a second conductive layer on a third level above the first conductive layer, extending in a second direction perpendicular to the first direction, the first wiring including a plurality of wires having a common length, each wire corresponding to an input/output terminal of a standard cell; a second wiring, entirely disposed over the first array, implemented by a third conductive layer above the second conductive layer, extending in the first direction, and connected to the first wiring; a third wiring, entirely disposed over the second array, implemented by the third conductive layer, extending in the first direction, and connected to the first wiring; and a fourth wiring implemented by a fourth conductive layer above the third conductive layer, extending in the second direction, and connected to the first wiring at connection portions entirely disposed over the first and second arrays.
Claim 2
Dependent Claim
229 words
A semiconductor device comprising: a plurality of standard cells; a first array, arranged in a first direction, having some of the plurality of standard cells on a common level; a second array, arranged in the first direction adjacent to the first array, having others of the plurality of standard cells on the common level; first and second power lines implemented by a first conductive layer on a second level above the standard cells and extending in the first direction, for operating the standard cells; a first wiring implemented by a second conductive layer on a third level above the first conductive layer, extending in a second direction perpendicular to the first direction, the first wiring including a plurality of wires having a common length, each wire corresponding to an input/output terminal of a standard cell; a second wiring, entirely disposed over the first array, implemented by a third conductive layer above the second conductive layer, extending in the first direction, and connected to the first wiring; a third wiring, entirely disposed over the second array, implemented by the third conductive layer, extending in the first direction, and connected to the first wiring; and a fourth wiring implemented by a fourth conductive layer above the third conductive layer, extending in the second direction, and connected to the first wiring at connection portions entirely disposed over the first and second arrays.
Claim 3
Dependent Claim
31 words
A semiconductor device according to claim 1, further including a fifth wiring, connected between the first and second wirings, implemented by the third conductive layer and extending in the first direction.
Claim 4
Dependent Claim
45 words
A semiconductor device according to claim 2, wherein each wire includes a first contact portion connected to the input/output terminal, and a second contact portion connected to the second wirings, the first and second contact portions being arranged at different positions in the first wiring.
Claim 5
Dependent Claim
17 words
A semiconductor device according to claim 3, wherein the second array is contiguous to the first array.
Claim 6
Dependent Claim
18 words
A semiconductor device according to claim 4, wherein the first contact portion linearly extends in the first direction.
Claim 7
Dependent Claim
28 words
A semiconductor device according to claim 2, wherein the first and second power lines are arranged apart from end portions of the standard cells in the second direction.
Claim 8
Dependent Claim
15 words
A semiconductor device according to claim 6, wherein each standard cell includes a logic circuit.
Claim 9
Dependent Claim
20 words
A semiconductive device according to claim 1, wherein the plurality of wires are arranged over the first and second arrays.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-05-05 | 1995-11-04 | 1996-05-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-05-05 | 1999-11-04 | 2000-05-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-05-05 | 2003-11-04 | 2004-05-05 | $7700.00 | Window Closed / Lapsed |