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US5106432A Expired / Lapsed US ⏱️ 0.0 years remaining

Wafer alignment mark utilizing parallel grooves and process

Assignee: Lapis Semiconductor Co Ltd
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Filing: 1990-05-15
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Granted: 1992-04-21
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Expires: 2010-05-15
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Abstract

Abstract A wafer alignment mark consists of patterns, such as a chevron and two stripes, formed in the surface of a semiconductor wafer. Each pattern is defined by a pair of parallel grooves, separation between all pairs of grooves being the same. Each groove provides one sharp edge which can be reliably detected by an automatic alignment system. A wafer fabrication process uses peripheral etching to form grooves in a wafer substrate around the periphery of windows opened for dopant diffusion and alignment mark formation, and forms Si 3 N 4 tapers in the grooves. Although ultimately removed, the grooves create a pattern with nearly vertical sidewalls in the substrate which, when transferred to an epitaxial layer, forms wafer alignment marks with sharp edges.

Inventors

  • 👤 Ryoichi Matsumoto
  • 👤 Toshikazu Kuroda
  • 👤 Takao Kato

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-04 20:45
CPC Classifications
H; H10; H10P; H10P95/00; G; G03; G03F; G03F9/00; G03F9/70; H10W; H10W46/00; H10W46/201; H10W46/301; H10W46/501; Y; Y10; Y10S; Y10S148/00; Y10S148/05; Y10S148/102; Y10S438/00; Y10S438/975

Claims Analysis

Total Claims: 14
Claim 1
Independent Claim 125 words
A wafer alignment mark for aligning a semiconductor wafer with a mask, comprising: a first alignment pattern comprising a first pair of parallel patterns, mutually separated by a constant distance A, intersecting at an angle a second pair of parallel alignment patterns, also mutually separated by the constant distance A; a second alignment pattern comprising a third pair of parallel, straight patterns, parallel to said first pair of parallel patterns, and located on another side of said first pattern; and a third alignment pattern comprising a fourth pair of parallel, straight patterns, parallel to said second pair of parallel patterns, and located on another side of said first pattern, said first, second, and third alignment patterns being detectable on a single side of the wafer.
Claim 2
Dependent Claim 125 words
A wafer alignment mark for aligning a semiconductor wafer with a mask, comprising: a first alignment pattern comprising a first pair of parallel patterns, mutually separated by a constant distance A, intersecting at an angle a second pair of parallel alignment patterns, also mutually separated by the constant distance A; a second alignment pattern comprising a third pair of parallel, straight patterns, parallel to said first pair of parallel patterns, and located on another side of said first pattern; and a third alignment pattern comprising a fourth pair of parallel, straight patterns, parallel to said second pair of parallel patterns, and located on another side of said first pattern, said first, second, and third alignment patterns being detectable on a single side of the wafer.
Claim 3
Dependent Claim 21 words
The wafer alignment mark of claim 1 wherein said third and fourth parallel patterns are separated by said constant distance A.
Claim 4
Dependent Claim 17 words
The alignment mark of claim 1 wherein said distance A is between ten micrometers and twenty-five micrometers.
Claim 5
Dependent Claim 30 words
The alignment mark of claim 1 wherein said second and third alignment patterns are disposed at a distance of seventy-five micrometers to one-hundred fifty micrometers from said first alignment pattern.
Claim 6
Dependent Claim 14 words
The alignment mark of claim 1 wherein each of said alignment patterns comprise grooves.
Claim 7
Dependent Claim 13 words
The alignment mark of claim 1 wherein said angle is a right angle.
Claim 8
Dependent Claim 29 words
The alignment mark of claim 1 wherein the mask includes alignment patterns mutually separated by a distance A and parallel to at least one alignment pattern on said wafer.
Claim 9
Dependent Claim 111 words
A wafer alignment mark for aligning a semiconductor wafer with a mask, comprising: a first pair of parallel grooves mutually separated by a constant distance A, formed on a surface of said wafer, each groove comprising two straight sections joined at a right angle; a second pair of parallel, straight grooves, mutually separated by the same distance A, formed on said surface and parallel to said first pair of grooves on one side of said right angle; and a third pair of parallel, straight grooves, mutually separated by the same distance A, formed on said surface and parallel to said first pair of grooves on another side of said right angle.
Claim 10
Dependent Claim 111 words
A wafer alignment mark for aligning a semiconductor wafer with a mask, comprising: a first pair of parallel grooves mutually separated by a constant distance A, formed on a surface of said wafer, each groove comprising two straight sections joined at a right angle; a second pair of parallel, straight grooves, mutually separated by the same distance A, formed on said surface and parallel to said first pair of grooves on one side of said right angle; and a third pair of parallel, straight grooves, mutually separated by the same distance A, formed on said surface and parallel to said first pair of grooves on another side of said right angle.
Claim 11
Dependent Claim 16 words
The alignment mark of claim 8, wherein said grooves are between two and three micrometers wide.
Claim 12
Dependent Claim 17 words
The alignment mark of claim 9, wherein said distance A is between ten micrometers and twenty-five micrometers.
Claim 13
Dependent Claim 36 words
The alignment mark of claim 10, wherein said second pair of grooves and said third pair of grooves are disposed at a distance of seventy-five micrometers to one-hundred fifty micrometers from said first pair of grooves.
Claim 14
Dependent Claim 25 words
The alignment mark of claim 8 wherein the mask includes mask alignment patterns parallel to at least one pair of parallel grooves on said wafer.

References Cited (Backward Citations)

US3796497A Cited
US4200395A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1995-04-21 1995-10-21 1996-04-21 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1999-04-21 1999-10-21 2000-04-21 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2003-04-21 2003-10-21 2004-04-21 $7700.00 Window Closed / Lapsed

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