US5105255A
Expired / Lapsed
US
⏱️ 0.0 years remaining
MMIC die attach design for manufacturability
Assignee: Raytheon Co
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Filing: 1990-01-10
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Granted: 1992-04-14
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Expires: 2010-01-10
Abstract
Abstract An improved semiconductor device for use in microwave integrated circuits is disclosed. In particular, an improved monolithic integrated circuit (10) comprised of a semi-insulating substrate (12) and having an integrated circuit on a top surface (14) thereof. MMIC (10) is provided with free area (38) of a predetermined width extending along the entire periphery or at least two opposing sides and which is void of active circuitry. Free area (38) permits intimate mating contact with a die collet tool (58). Die collet tool (58) has a surface configured to matingly engage free areas (38) while avoiding contact with the active circuitry so as to avoid damage thereto. MMIC (10) permits application of high volume, automated manufacturing processes which previously could not be utilized.
Inventors
- 👤 Michael J. Shannon
- 👤 Randolf C. Turnidge
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:28
CPC Classifications
H; H10; H10W; H10W44/00; H10W44/20; H10D; H10D84/00; H10D84/01; H10D84/02; H10D84/05; H10W20/00; H10W20/20
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
95 words
A semiconductor device comprising: a wafer of semiconducting material having a first major top surface, a second major bottom surface and a plurality of side surfaces extending between said top and bottom surfaces; circuitry on a predetermined portion of said first major surface o said wafer defining preselectively exposed areas on opposite sides of said circuitry, said areas extending substantially parallel to one another and having a width of about 0.007" to about 0.009" whereby said first major top surface provides mating engagement with a work handling apparatus configured to avoid contact with said circuitry.
Claim 2
Dependent Claim
95 words
A semiconductor device comprising: a wafer of semiconducting material having a first major top surface, a second major bottom surface and a plurality of side surfaces extending between said top and bottom surfaces; circuitry on a predetermined portion of said first major surface o said wafer defining preselectively exposed areas on opposite sides of said circuitry, said areas extending substantially parallel to one another and having a width of about 0.007" to about 0.009" whereby said first major top surface provides mating engagement with a work handling apparatus configured to avoid contact with said circuitry.
Claim 3
Dependent Claim
16 words
A semiconductor device accordding to claim 1 wherein said wafer is a gallium arsenide semiconductor wafer.
Claim 4
Dependent Claim
39 words
A semiconductor device according to claim 2 wherein said circuitry is an electrical integrated circuit formed on said first major surface of said gallium arsenide semiconductor wafer, said electrical integrated circuit capable of operation within the microwave frequency spectrum.
Claim 5
Dependent Claim
20 words
A semiconductor device according to claim 3 wherein said semiconductor device has a thickness of about 0.004" to about 0.010".
Claim 6
Dependent Claim
21 words
A semiconductor device according to claim 1 wherein said preselectively exposed areas are provided along opposite peripheral surfaces of said wafer.
Claim 7
Dependent Claim
149 words
A microwave integrated circuit device, comprising: a wafer of semiconducting material having a first major top surface, a second major bottom surface and a plurality of side surfaces extending between said top and bottom surfaces; said semiconductor wafer made of a layer of gallium arsenide; an integrated circuit formed on said top surface of said semiconductor wafer defining preselectively exposed areas on opposite sides of said integrated circuit, said exposed areas extending substantially parallel to one another and having a width of about 0.005" to about 0.015"; at least one via extending transversely through said semiconductor layer from said second major bottom surface of said semiconductor wafer to said first major top surface; and an electrically conductive layer formed on said second major bottom surface on said via and interfacing with said integrated circuit for providing a conductive path between said integrated circuit and said second major bottom surface.
Claim 8
Dependent Claim
149 words
A microwave integrated circuit device, comprising: a wafer of semiconducting material having a first major top surface, a second major bottom surface and a plurality of side surfaces extending between said top and bottom surfaces; said semiconductor wafer made of a layer of gallium arsenide; an integrated circuit formed on said top surface of said semiconductor wafer defining preselectively exposed areas on opposite sides of said integrated circuit, said exposed areas extending substantially parallel to one another and having a width of about 0.005" to about 0.015"; at least one via extending transversely through said semiconductor layer from said second major bottom surface of said semiconductor wafer to said first major top surface; and an electrically conductive layer formed on said second major bottom surface on said via and interfacing with said integrated circuit for providing a conductive path between said integrated circuit and said second major bottom surface.
Claim 9
Dependent Claim
34 words
A microwave integrated circuit device according to claim 6 wherein said semiconductor wafer is made of a layer of gallium arsenide having a thickness of at least about 0.004" to at least about 0.007".
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-04-14 | 1995-10-14 | 1996-04-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-04-14 | 1999-10-14 | 2000-04-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-04-14 | 2003-10-14 | 2004-04-14 | $7700.00 | Window Closed / Lapsed |