Semiconductor device with interfacial electrode layer

Claim 2

A semiconductor device comprising: a thin film active layer containing silicon and having front and back surfaces; a first electrode having a layer of light transmissive zinc oxide at the front surface of the active layer; and a second electrode having at least one conductive layer and an interfacial layer intermediate the conduction layer and the back surface of the active layer, the interfacial layer comprising a metal which increases electrical resistance between the first and second electrodes adjacent pinhole-type defects of the active layer.

Claim 3

The thin film semiconductor device of claim 1 wherein: the interfacial layer comprises a metal selected from the group consisting of tin, gold titanium, palladium and tantalum.

Claim 4

The thin film semiconductor device of claim 1 wherein: the interfacial layer comprises a metal selected from the group consisting of tin and gold.

Claim 5

The thin film semiconductor device of claim 1 wherein: the interfacial layer comprises tin.

Claim 6

The thin film semiconductor device of claim 1 wherein: the interfacial layer comprises a first layer between 30 and 100 angstroms thick and comprising a metal selected from the group consisting of tin, titanium, palladium and tantalum; and a back-up layer of gold on a surface of the first layer opposite to the active layer.

Claim 7

The thin film semiconductor device of claim 5 wherein: the second electrode has the at least one conductive layer on a surface of the back-up layer opposite to the active layer.

Claim 8

The thin film semiconductor device of claim 6 wherein: the back-up layer is up to 500 angstroms thick; and, said at least one conductive layer comprises a metallic conduction layer more than 500 angstroms thick.

Claim 9

The thin film semiconductor device of claim 7 wherein: said metallic conduction layer contains a metal selected from the group of copper and aluminum.

Claim 10

The thin film semiconductor device of claim 8 wherein: said at least one conductive layer further comprises a metallic encapsulation layer.

Claim 11

The thin film semiconductor device of claim 1 wherein: the semiconductor device is a photovoltaic module.

Claim 12

The thin film semiconductor device of claim 1 wherein: the first electrode is separated into a plurality of discrete first electrode pads; the thin film active layer is deposited over the first electrode to form an active region over each of said first electrode pads; the second electrode is separated into a plurality of discrete second electrode pads, each second electrode pad substantially overlying one of said active regions and overlapping an edge of one of said first electrode pads at a preselected interconnect portion of the active layer; the active layer having a series of grooves therein at said interconnect portions so that the second electrode pad of each active region electrically contacts the first electrode paid of an adjoining active region to place the active regions in series.

Claim 13

A semiconductor device comprising: a thin film active layer containing silicon and having front and back surfaces; a first electrode having a layer of light transmissive zinc oxide at the front surface of the active layer; and a second electrode having at least one conduction layer and an interfacial layer intermediate the conduction layer and the back surface of the active layer, the interfacial layer comprising a metal selected from the group consisting of tin, gold, titanium, palladium and tantalum, said interfacial layer serving to increase electrical resistance between the first and second electrodes adjacent pinhole-type defects of the active layer.

Claim 14

A semiconductor device comprising: a thin film active layer containing silicon and having front and back surfaces; a first electrode having a layer of light transmissive zinc oxide at the front surface of the active layer; and a second electrode having at least one conduction layer and an interfacial layer intermediate the conduction layer and the back surface of the active layer, the interfacial layer comprising a metal selected from the group consisting of tin, gold, titanium, palladium and tantalum, said interfacial layer serving to increase electrical resistance between the first and second electrodes adjacent pinhole-type defects of the active layer.