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US5099301A Expired / Lapsed US ⏱️ 0.0 years remaining

Electroluminescent semiconductor device

Assignee: Yu Holding BVI Inc
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Filing: 1989-09-29
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Granted: 1992-03-24
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Expires: 2009-09-29
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Abstract

Abstract An electroluminescent semiconductor device in which the drain of a MOSFET acts as the driver for a manganese doped zinc sulfide electroluminescent layer. The zinc sulfide layer is coated with a layer of metal which prevents the emission of light from the electroluminescent layer except through an aperture extending through the metal layer. Alternatively, the aperture is omitted and laser emission is induced from a semi-reflective end plate positioned on a side of the electroluminescent layer.

Inventors

  • 👤 Dan Kikinis

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-08 16:51
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; H10H20/823; H01; H01S; H01S5/00; H01S5/40; H01S5/42; H01S5/423

Claims Analysis

Total Claims: 13
Claim 1
Independent Claim 95 words
An electroluminous device comprising: a semiconductor substrate including at least one integrated circuit element for generating a controlled supply of electrons and positioned on a surface of the semiconductor substrate; an electroluminescent layer deposited over and integrated into said integrated circuit element such that said electroluminescent layer is in direct physical contact with at least one terminal of said integrated circuit element, for generating light in response to a flow of electrons from said integrated circuit element to the electroluminescent layer; and an electrically conductive non-transparent layer covering at least part of the electroluminescent layer.
Claim 2
Dependent Claim 95 words
An electroluminous device comprising: a semiconductor substrate including at least one integrated circuit element for generating a controlled supply of electrons and positioned on a surface of the semiconductor substrate; an electroluminescent layer deposited over and integrated into said integrated circuit element such that said electroluminescent layer is in direct physical contact with at least one terminal of said integrated circuit element, for generating light in response to a flow of electrons from said integrated circuit element to the electroluminescent layer; and an electrically conductive non-transparent layer covering at least part of the electroluminescent layer.
Claim 3
Dependent Claim 111 words
An electroluminous device, comprising: a semiconductor substrate including at least one integrated circuit element for generating a controlled supply of electrons and positioned on a surface of the semiconductor substrate; an electroluminescent layer deposited over said integrated circuit element, for generating light in response to a flow of electrons from said integrated circuit element to the electroluminescent layer; an electrically conductive non-transparent layer covering at least part of the electroluminescent layer; said integrated circuit element comprising a MOSFET having a source element, a gate element and a drain element; and a dopant layer coated on a surface of said drain element and positioned between said drain element and the electroluminescent layer.
Claim 4
Dependent Claim 111 words
An electroluminous device, comprising: a semiconductor substrate including at least one integrated circuit element for generating a controlled supply of electrons and positioned on a surface of the semiconductor substrate; an electroluminescent layer deposited over said integrated circuit element, for generating light in response to a flow of electrons from said integrated circuit element to the electroluminescent layer; an electrically conductive non-transparent layer covering at least part of the electroluminescent layer; said integrated circuit element comprising a MOSFET having a source element, a gate element and a drain element; and a dopant layer coated on a surface of said drain element and positioned between said drain element and the electroluminescent layer.
Claim 5
Dependent Claim 14 words
The electroluminous device of claim 2 wherein, the electroluminescent layer comprises zinc sulfide (ZnS).
Claim 6
Dependent Claim 15 words
The electroluminous device of claim 2 wherein, the electroluminescent layer comprises zinc sulfide and magnanese.
Claim 7
Dependent Claim 14 words
The electroluminous device of claim 2 wherein, the electrically conductive layer comprises a metal.
Claim 8
Dependent Claim 24 words
The electroluminous device of claim 2 wherein, the light generated by the electroluminescent layer is emitted through an aperture in the electrically conductive layer.
Claim 9
Dependent Claim 20 words
The electroluminous device of claim 6 wherein, said aperture has a diameter in the range of 1 to 50 microns.
Claim 10
Dependent Claim 132 words
An electroluminous light dot device comprising: a plurality of electroluminous devices arranged in at least one linear row and each of the electroluminous devices comprising, a semiconductor substrate including at least one integrated circuit element for generating a controlled supply of electrons and positioned on a surface of the semiconductor substrate; an electroluminescent layer deposited over said integrated circuit element, for generating light in response to a flow of electrons from said integrated circuit element to the electroluminescent layer; an electrically conductive non-transparent layer covering at least part of the electroluminescent layer; said integrated circuit element comprising a MOSFET having a source element, a gate element and a drain element; and a dopant layer coated on a surface of said drain element and positioned between said drain element and the electroluminescent layer.
Claim 11
Dependent Claim 132 words
An electroluminous light dot device comprising: a plurality of electroluminous devices arranged in at least one linear row and each of the electroluminous devices comprising, a semiconductor substrate including at least one integrated circuit element for generating a controlled supply of electrons and positioned on a surface of the semiconductor substrate; an electroluminescent layer deposited over said integrated circuit element, for generating light in response to a flow of electrons from said integrated circuit element to the electroluminescent layer; an electrically conductive non-transparent layer covering at least part of the electroluminescent layer; said integrated circuit element comprising a MOSFET having a source element, a gate element and a drain element; and a dopant layer coated on a surface of said drain element and positioned between said drain element and the electroluminescent layer.
Claim 12
Dependent Claim 37 words
The electroluminous light dot device of claim 8 further comprising, a lens system for focusing the light generated by each of said linear rows of electroluminous devices into an unbroken solid line at a point of observation.
Claim 13
Dependent Claim 16 words
The electroluminous light dot device of claim 9 wherein, the lens system comprises a Fresnel lens.

References Cited (Backward Citations)

US4523189A Cited
US4665342A Cited
US4935665A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1995-03-24 1995-09-23 1996-03-24 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1999-03-24 1999-09-23 2000-03-24 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2003-03-24 2003-09-23 2004-03-24 $7700.00 Window Closed / Lapsed

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