US5098526A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for preparation of a seed layer for selective metal deposition
Assignee: United States Department of Energy
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Filing: 1991-04-08
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Granted: 1992-03-24
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Expires: 2011-04-08
Abstract
Abstract Disclosed is a process for selective metal deposition comprising of the steps of: a. formation of an initial surface on a substrate, said initial surface being comprised of at least two layers of which the uppermost is inert, b. exposing the surface to a source of heat in pre-determined places wherein surface activation is desired, and c. deposition of metal on activated portions of said surface.
Inventors
- 👤 Anthony F. Bernhardt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 13:59
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/10; H05K3/18; H05K3/181; H05K3/182; H05K3/185; C; C23; C23C; C23C18/00; C23C18/16; C23C18/1601; C23C18/1603; C23C18/1607; C23C18/1608; C23C18/1612; C25; C25D; C25D5/00; C25D5/02; C25D5/024; C25D7/00; C25D7/12; C25D7/123
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
102 words
A process for selective metal deposition comprising of the steps of: a. formation of an initial surface on a substrate, said initial surface being comprised of at least two layers, an upper layer and a lower layer, said upper layer comprising an electrical insulator and said lower layer comprising a metal, b. exposing the surface to a laser beam of sufficient energy to cause melting and intermixing of said upper and lower layers, and to activate said surface in pre-determined places where surface activation is desired, c. cooling and solidifying said surface, and d. depositing metal on activated portions of said surface.
Claim 2
Dependent Claim
102 words
A process for selective metal deposition comprising of the steps of: a. formation of an initial surface on a substrate, said initial surface being comprised of at least two layers, an upper layer and a lower layer, said upper layer comprising an electrical insulator and said lower layer comprising a metal, b. exposing the surface to a laser beam of sufficient energy to cause melting and intermixing of said upper and lower layers, and to activate said surface in pre-determined places where surface activation is desired, c. cooling and solidifying said surface, and d. depositing metal on activated portions of said surface.
Claim 3
Dependent Claim
17 words
The process of claim 1 wherein the heat source of step 2 is an argon ion laser.
Claim 4
Dependent Claim
12 words
The process of claim 1 wherein deposition of metal occurs by electroplating.
Claim 5
Dependent Claim
10 words
The process of claim 3 wherein said metal is copper.
Claim 6
Dependent Claim
17 words
The process of claim 4 wherein said adhersion layer is composed of 30% titanium and 70% wolfram.
Claim 7
Dependent Claim
10 words
The process of claim 3 wherein said metal is gold.
Claim 8
Dependent Claim
13 words
The process of claim 1 wherein deposition of metal occurs by electroless plating.
Claim 9
Dependent Claim
10 words
The process of claim 7 wherein said metal is copper.
Claim 10
Dependent Claim
10 words
The process of claim 7 wherein said metal is gold.
Claim 11
Dependent Claim
26 words
The process of claim 1 further comprising the further step of exposing the surface to an etchant prior to deposition of the metal in step (d).
Claim 12
Dependent Claim
11 words
The process of claim 10 wherein the etchant contains hydrogen fluoride.
Claim 13
Dependent Claim
84 words
A process for preparation of a seed layer for selective metal deposition which comprises: a. coating a substrate with at least two layers of material, an electrical insulating surface layer and at least one subsurface metal layer, b. exposing said layers to a laser beam of sufficient energy to cause melting and intermixing of said layers in locations where surface activation is desired, thereby activating said surface layer, c. cooling and solidifying said intermixed layers, and d. depositing metal on said activated surface layer.
Claim 14
Dependent Claim
84 words
A process for preparation of a seed layer for selective metal deposition which comprises: a. coating a substrate with at least two layers of material, an electrical insulating surface layer and at least one subsurface metal layer, b. exposing said layers to a laser beam of sufficient energy to cause melting and intermixing of said layers in locations where surface activation is desired, thereby activating said surface layer, c. cooling and solidifying said intermixed layers, and d. depositing metal on said activated surface layer.
Claim 15
Dependent Claim
13 words
The process of claim 12 wherein said substrate is a silicon circuit board.
Claim 16
Dependent Claim
11 words
The process of claim 12 wherein said subsurface layer is gold.
Claim 17
Dependent Claim
11 words
The process of claim 12 wherein said surface layer is silicon.
Claim 18
Dependent Claim
18 words
The process of claim 12 wherein an adhesion layer is interposed between said substrate and said metal layer.
Claim 19
Dependent Claim
13 words
The process of claim 12 wherein said laser is an argon ion laser.
References Cited (Backward Citations)
US3506545A
Cited
US4217183A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-03-24 | 1995-09-23 | 1996-03-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-24 | 1999-09-23 | 2000-03-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-03-24 | 2003-09-23 | 2004-03-24 | $7700.00 | Window Closed / Lapsed |