US5096990A
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US
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Resin composition for inner coat of semiconductor chip
Assignee: JNC Corp
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Filing: 1989-10-19
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Granted: 1992-03-17
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Expires: 2009-10-19
Abstract
Abstract Resin compositions for the inner coat of semiconductors which include (A) 100 parts by weight of a polysiloxane having vinyl groups and having a viscosity of 100 to 800cP at 25° C., said polysiloxane having a general formula ##STR1## in which V represents a vinyl group, Me represents a methyl group, Ph represents a phenyl group, R represents a methyl group or a phenyl group and both k and l represent natural numbers which are variables within the range of 0.01≦l/(k+l)≦0.2, (B) 1 to 35 parts by weight of a polysiloxane haivng a viscosity of 2 to 500cP at 25° C., said polysiloxane having a general formula ##STR2## in which Me represents a methyl group, and both m and n represent natural numbers which are variables within the range of 0.05≦n/(M+n)≦0.3, (C) 0.1 to 20% by weight of a organopolysiloxane per total amount of the above-described (A) plus (B), the organopolysiloxane having, per molecule, at least one hydrogen atom bound with a silicon atom and at lest one group having the general formula (R 1 O) 3 SiCH 2 CH 2 -- in which R 1 represents a lower alkyl group or a group R 2 (OCH 2 CH 2 ) p -- in which R 2 represents a methyl group or an ethyl group and p represents a positive number of 3 or less, and (D) platinum catalyst for the addition reaction are provided.
Inventors
- 👤 Kazuhiro Takayanagi
- 👤 Masayuki Tsuchida
- 👤 Atsushi Koshimura
- 👤 Nobumasa Ohtake
- 👤 Tamio Kimura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 14:32
CPC Classifications
C; C08; C08L; C08L83/00; C08L83/04; C08G; C08G77/00; C08G77/80; H; H10; H10W; H10W74/00; H10W74/40; H10W74/47; H10W74/476; H10W90/00; H10W90/701; H10W90/731; H10W90/736; C08G77/04; C08G77/12; C08G77/20; C08G77/70; C08L2205/00; C08L2205/02; C08L2205/03
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
236 words
A resin composition for the inner coat of semiconductor comprising (A) 100 parts by weight of a polysiloxane having vinyl groups and having a viscosity of 100 to 800 cP at 25° C., said polysiloxane having a general formula ##STR7## in which V represents a vinyl group, Me represents a methyl group, Ph represents a phenyl group, R represents a methyl group or a phenyl group and both k and l represent natural numbers which are variables within the range of 0.01≦l/(k+l)≦0.2, (B) 1 to 35 parts by weight of a polysiloxane having a viscosity of 2 to 500 cP at 25° C., said polysiloxane having a general formula ##STR8## in which Me represents a methyl group, and both m and n represent natural numbers which are variables within the range of 0.05≦n/(m+n)≦0.3, (C) 0.1 to 20% by weight of an organopolysiloxane per total amount of the above-described (A) plus (B), said organopolysiloxane having, per molecule, at least one hydrogen atom bound with a silicon atom and at least one group having the general formula (R 1 O) 3 SiCH 2 CH 2 -- in which R 1 represents a lower alkyl group or a group R 2 (OCH 2 CH 2 ) p -- in which R 2 represents a methyl group or an ethyl group and p represents a positive number of 3 or less, and (D) a platinum catalyst for the addition reaction.
Claim 2
Dependent Claim
236 words
A resin composition for the inner coat of semiconductor comprising (A) 100 parts by weight of a polysiloxane having vinyl groups and having a viscosity of 100 to 800 cP at 25° C., said polysiloxane having a general formula ##STR7## in which V represents a vinyl group, Me represents a methyl group, Ph represents a phenyl group, R represents a methyl group or a phenyl group and both k and l represent natural numbers which are variables within the range of 0.01≦l/(k+l)≦0.2, (B) 1 to 35 parts by weight of a polysiloxane having a viscosity of 2 to 500 cP at 25° C., said polysiloxane having a general formula ##STR8## in which Me represents a methyl group, and both m and n represent natural numbers which are variables within the range of 0.05≦n/(m+n)≦0.3, (C) 0.1 to 20% by weight of an organopolysiloxane per total amount of the above-described (A) plus (B), said organopolysiloxane having, per molecule, at least one hydrogen atom bound with a silicon atom and at least one group having the general formula (R 1 O) 3 SiCH 2 CH 2 -- in which R 1 represents a lower alkyl group or a group R 2 (OCH 2 CH 2 ) p -- in which R 2 represents a methyl group or an ethyl group and p represents a positive number of 3 or less, and (D) a platinum catalyst for the addition reaction.
Claim 3
Dependent Claim
45 words
A resin composition for the inner coat of semiconductor as described in the claim 1, wherein said polysiloxane (A) has the viscosity of 200 to 500 cP at 25° C. and the polysiloxane (B) has the viscosity of 5 to 150 cP at 25° C.
Claim 4
Dependent Claim
26 words
A resin composition for the inner coat of semiconductor as described in claim 1, wherein said polysiloxane (A) has the l/(k+l) value of 0.03 to 0.15.
Claim 5
Dependent Claim
26 words
A resin composition for the inner coat of semiconductor as described in claim 1, wherein said polysiloxane (B) has the n/(m+n) value of 0.1 to 0.2.
Claim 6
Dependent Claim
37 words
A resin composition for the inner coat of semiconductor as described in claim 1, wherein said composition comprises 5 to 25 parts by weight of the polysiloxane (B) per 100 parts by weight of the polysiloxane (A).
Claim 7
Dependent Claim
31 words
A resin composition for the inner coat of semiconductor as described in claim 1, wherein said composition comprises polysiloxane (A) having phenyl groups represented by R in the general formula thereof.
Claim 8
Dependent Claim
35 words
A resin composition for the inner coat of semiconductor as described in claim 1, wherein said composition comprises 1 to 10% by weight of the denatured organopolysiloxane (C) per total amount of (A) plus (B).
Claim 9
Dependent Claim
232 words
A resin composition for the inner coat of semiconductors comprising (A) 100 parts by weight of a polysiloxane having vinyl groups and having a viscosity of 200 to 500 cP at 25° C., said polysiloxane having a general formula ##STR9## in which V represents a vinyl group, Me represents a methyl group, Ph represents a phenyl group, and both k and l represent natural numbers which are variables within the range of 0.03≦l/(k+l)≦0.15, (B) 5 to 25 parts of weight of a polysiloxane having the viscosity of 5 to 150 cP at 25° C., said polysiloxane having the general formula ##STR10## in which Me represents a methyl group, and both m and n represent natural numbers which are variable within the range of 0.1≦n/(m+n)≦0.2, (C) 0.1 to 20% by weight of an organopolysiloxane per total amount of polysiloxane in (A) plus polysiloxane (B), said organopolysiloxane having, per molecule, at least one hydrogen atom bound with a silicon atom and at least one group having the general formula (R 1 O) 3 --SiCH 2 CH 2 -- in which R 1 represent a lower alkyl group or a group having the general formula R 2 (OCH 2 CH 2 ) p -- in which R 2 represents a methyl group or an ethyl group and p represents a positive number of 3 or less, and (D) a platinum catalyst for the addition reaction.
Claim 10
Dependent Claim
232 words
A resin composition for the inner coat of semiconductors comprising (A) 100 parts by weight of a polysiloxane having vinyl groups and having a viscosity of 200 to 500 cP at 25° C., said polysiloxane having a general formula ##STR9## in which V represents a vinyl group, Me represents a methyl group, Ph represents a phenyl group, and both k and l represent natural numbers which are variables within the range of 0.03≦l/(k+l)≦0.15, (B) 5 to 25 parts of weight of a polysiloxane having the viscosity of 5 to 150 cP at 25° C., said polysiloxane having the general formula ##STR10## in which Me represents a methyl group, and both m and n represent natural numbers which are variable within the range of 0.1≦n/(m+n)≦0.2, (C) 0.1 to 20% by weight of an organopolysiloxane per total amount of polysiloxane in (A) plus polysiloxane (B), said organopolysiloxane having, per molecule, at least one hydrogen atom bound with a silicon atom and at least one group having the general formula (R 1 O) 3 --SiCH 2 CH 2 -- in which R 1 represent a lower alkyl group or a group having the general formula R 2 (OCH 2 CH 2 ) p -- in which R 2 represents a methyl group or an ethyl group and p represents a positive number of 3 or less, and (D) a platinum catalyst for the addition reaction.
References Cited (Backward Citations)
US4764576A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-03-17 | 1995-09-16 | 1996-03-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-17 | 1999-09-16 | 2000-03-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-03-17 | 2003-09-16 | 2004-03-17 | $7700.00 | Window Closed / Lapsed |