US5096880A
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Method and apparatus for inducing grain orientation by magnetic and electric field ordering during bulk superconductor synthesis
Assignee: Retro Reflective Optics LLC
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Filing: 1990-04-20
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Granted: 1992-03-17
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Expires: 2010-04-20
Abstract
Abstract A process is described for enhancing superconductor characteristics by application of strong magnetic and/or electric fields to the constituent component materials from which ceramic superconductors are being formed and during the time that these superconductors are being synthesized. This process has particular applicability to the production of superconducting oxide ceramics such as the cuprates. The required magnetic fields are on the order of 1-10 tesla and the required electric fields are on the order of 0.1-1 MV/cm. The fields act as ordering mechanisms and induce grain orientation. The magnetic field aligns the magnetic moment of the grains. The electric field induces electric polarization in the grains and then aligns them. The superconducting structure formation occurs during the sintering, cooling and annealing phases of the fabrication process. Superconductivity is strongly affected by the oxygen stoichiometry in the lattice elemental cell. Applied electric fields cause elongation of the unit cell. This accelerates oxygen diffusion throughout the lattice and this gives better control of the oxygen content of the sample. Applied magnetic fields exert a magnetic pressure on the sample. This invention produces ceramic superconducting materials with a high degree of grain orientation and current density properties equivalent to or exceeding many of the existing superconducting materials.
Inventors
- 👤 Theodore W. Rybka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 21:37
CPC Classifications
C; C04; C04B; C04B35/00; C04B35/01; C04B35/45; C04B35/4504; H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; Y; Y10; Y10S; Y10S505/00; Y10S505/725; Y10S505/727; Y10S505/73; Y10S505/731; Y10S505/732; Y10S505/80; Y10S505/815
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
82 words
A process for the formation or enhancement of superconducting properties in a superconductivity-susceptible material which comprises: a. reacting reactants which produce said material in a formation zone during a temperature cycle including a temperature of at least the sintering temperature of said reactants to form said material; and b. imposing across said formation zone substantially throughout the temperature cycle of formation of said material a continuous magnetic field of 1 to 10 tesla to form or enhance superconducting properties in said material.
Claim 2
Dependent Claim
82 words
A process for the formation or enhancement of superconducting properties in a superconductivity-susceptible material which comprises: a. reacting reactants which produce said material in a formation zone during a temperature cycle including a temperature of at least the sintering temperature of said reactants to form said material; and b. imposing across said formation zone substantially throughout the temperature cycle of formation of said material a continuous magnetic field of 1 to 10 tesla to form or enhance superconducting properties in said material.
Claim 3
Dependent Claim
28 words
A process as in claim 1 wherein said imposition of said magnetic field causes at least partial alignment of the magnetic moments of the grains in said material.
Claim 4
Dependent Claim
13 words
A process as in claim 1 wherein said material is in bulk form.
Claim 5
Dependent Claim
17 words
A process as in claim 1 wherein said material is in the form of a thin film.
Claim 6
Dependent Claim
104 words
A process for the formation or enhancement of superconducting properties by inducing grain orientation in a crystalline material, which comprises: a. reacting reactants which produce said crystalline material in a formation zone during a temperature cycle including a temperature of at least the sintering temperature of said reactants to form said crystalline material; and b. imposing across said formation zone substantially throughout the temperature cycle of formation of said crystalline material a continuous magnetic field of 1 to 10 tesla to induce at least partial orientation of the grains in said crystalline material and to form or enhance superconducting properties in said crystalline material.
Claim 7
Dependent Claim
104 words
A process for the formation or enhancement of superconducting properties by inducing grain orientation in a crystalline material, which comprises: a. reacting reactants which produce said crystalline material in a formation zone during a temperature cycle including a temperature of at least the sintering temperature of said reactants to form said crystalline material; and b. imposing across said formation zone substantially throughout the temperature cycle of formation of said crystalline material a continuous magnetic field of 1 to 10 tesla to induce at least partial orientation of the grains in said crystalline material and to form or enhance superconducting properties in said crystalline material.
Claim 8
Dependent Claim
110 words
A process for the formation or enhancement of superconducting properties by inducing grain orientation in an oxide crystalline material, which comprises: a. reacting reactants which produce said oxide crystalline material in a formation zone during a temperature cycle including a temperature of at least the sintering temperature of said reactants to form said oxide crystalline material; and b. imposing across said formation zone substantially throughout the temperature cycle of formation of said oxide crystalline material a continuous magnetic field of 1 to 10 tesla to induce at least partial orientation of the grains in said oxide crystalline material and to form or enhance superconducting properties in said oxide crystalline material.
Claim 9
Dependent Claim
110 words
A process for the formation or enhancement of superconducting properties by inducing grain orientation in an oxide crystalline material, which comprises: a. reacting reactants which produce said oxide crystalline material in a formation zone during a temperature cycle including a temperature of at least the sintering temperature of said reactants to form said oxide crystalline material; and b. imposing across said formation zone substantially throughout the temperature cycle of formation of said oxide crystalline material a continuous magnetic field of 1 to 10 tesla to induce at least partial orientation of the grains in said oxide crystalline material and to form or enhance superconducting properties in said oxide crystalline material.
Claim 10
Dependent Claim
14 words
A process as in claim 6 wherein said oxide crystalline material is a cuprate.
Claim 11
Dependent Claim
49 words
A process as in claim 7 wherein said cuprate is a perovskite of the formula RM 2 Z 3 O x , wherein R is yttrium, lanthanum or a rare earth element, M is an alkaline earth element, Z is a transition metal element and x equals approximately 6-8.
Claim 12
Dependent Claim
23 words
A process as in claim 8 wherein said perovskite is a "1-2-3" perovskite of the formula RBa 2 Cu 3 O x .
Claim 13
Dependent Claim
10 words
A process as in claim 9 wherein R is yttrium.
Claim 14
Dependent Claim
60 words
A process as in claim 7 wherein said cuprate has the formula M y M' 2 Ca n-1 Cu n O z , wherein M is thallium or bismuth, M' is barium or strontium, n=an integer of 1-4, y=1 or 2, and z is a variable dependent on n and y with a value in the range of about 4-12.
Claim 15
Dependent Claim
136 words
A process for the formation of superconducting properties in an oxide crystalline material which comprises: a. reacting reactants which produce said oxide crystalline material in a formation zone during a temperature cycle including a temperature of at least the sintering temperature of said reactants to form said oxide crystalline material having at least one elemental deficiency per crystal unit; b. conducting said reaction in the presence of a gas which supplies a desired quantity of the missing element to the crystalline material; and c. imposing across said formation zone substantially throughout the temperature cycle of formation of said oxide crystalline material a continuous magnetic field of 1 to 10 tesla to induce at least partial orientation of the grains in said oxide crystalline material and to form or enhance superconducting properties in said oxide crystalline material.
Claim 16
Dependent Claim
136 words
A process for the formation of superconducting properties in an oxide crystalline material which comprises: a. reacting reactants which produce said oxide crystalline material in a formation zone during a temperature cycle including a temperature of at least the sintering temperature of said reactants to form said oxide crystalline material having at least one elemental deficiency per crystal unit; b. conducting said reaction in the presence of a gas which supplies a desired quantity of the missing element to the crystalline material; and c. imposing across said formation zone substantially throughout the temperature cycle of formation of said oxide crystalline material a continuous magnetic field of 1 to 10 tesla to induce at least partial orientation of the grains in said oxide crystalline material and to form or enhance superconducting properties in said oxide crystalline material.
Claim 17
Dependent Claim
14 words
A process as in claim 12 wherein said oxide crystalline material is a cuprate.
Claim 18
Dependent Claim
49 words
A process as in claim 13 wherein said cuprate is a perovskite of the formula RM 2 Z 3 O x , wherein R is yttrium, lanthanum or a rare earth element, M is an alkaline earth element, Z is a transition metal element and x equals approximately 6-8.
Claim 19
Dependent Claim
23 words
A process as in claim 14 wherein said perovskite is a "1-2-3" perovskite of the formula RBa 2 Cu 3 O x .
Claim 20
Dependent Claim
10 words
A process as in claim 14 wherein R is yttrium.
Claim 21
Dependent Claim
60 words
A process as in claim 13 wherein said cuprate has the formula M y M' 2 Ca n-1 Cu n O z , wherein M is thallium or bismuth, M' is barium or strontium, n=an integer of 1-4, y=1 or 2, and z is a variable dependent on n and y with a value in the range of about 4-12.
References Cited (Backward Citations)
WO1988009312A1
Cited
US4942151A
Cited
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