US5095351A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having bipolar transistor and method of producing the same
Assignee: Fujitsu Ltd
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Filing: 1988-10-11
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Granted: 1992-03-10
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Expires: 2008-10-11
Abstract
Abstract A semiconductor device has a base substrate made of a conductor or a semiconductor, an insulator layer formed on the base substrate, an active layer made of a semiconductor and formed on the insulator layer, where the active layer at least has a bipolar transistor formed therein having a base region, an emitter region and a collector region in the active layer, and a voltage source for applying a potential difference across the base substrate and the active layer in such a direction that an electric-field-induced layer is formed in the active layer in a vicinity of an interface between the insulator layer and the active layer. The electric-field-induced layer is used as a portion of a collector electrode of the bipolar transistor.
Inventors
- 👤 Hiroshi Gotou
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 10:47
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/20; H10D10/00; H10D10/311; H10D64/23; H10W; H10W15/00; H10W15/01
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
176 words
A semiconductor substrate comprising: a base substrate made of a conductor or a semiconductor material; an insulator layer formed on said base substrate; an active layer made of an n-type semiconductor material and formed on said insulator layer and defining an interface therebetween, said active layer having a bipolar transistor formed therein, said bipolar transistor having a base region, an emitter region and a collector region, each said region formed in said active layer; and means for applying a potential difference across said base substrate and said active layer in such a direction that an electric-field-induced accumulation layer is formed in said active layer in the vicinity of the interface between said insulator layer and said active layer, said electric-field-induced layer serving as a portion of a collector electrode of said bipolar transistor, said base region comprising a p-type region formed in said active layer, said emitter region comprising an n-type region formed in said p-type region, and said collector region comprising a diffusion region formed in said active layer and connected to said electric-field-induced layer.
Claim 2
Dependent Claim
176 words
A semiconductor substrate comprising: a base substrate made of a conductor or a semiconductor material; an insulator layer formed on said base substrate; an active layer made of an n-type semiconductor material and formed on said insulator layer and defining an interface therebetween, said active layer having a bipolar transistor formed therein, said bipolar transistor having a base region, an emitter region and a collector region, each said region formed in said active layer; and means for applying a potential difference across said base substrate and said active layer in such a direction that an electric-field-induced accumulation layer is formed in said active layer in the vicinity of the interface between said insulator layer and said active layer, said electric-field-induced layer serving as a portion of a collector electrode of said bipolar transistor, said base region comprising a p-type region formed in said active layer, said emitter region comprising an n-type region formed in said p-type region, and said collector region comprising a diffusion region formed in said active layer and connected to said electric-field-induced layer.
Claim 3
Dependent Claim
19 words
A semiconductor device as claimed in claim 1 in which said base substrate is made of a p-type semiconductor.
Claim 4
Dependent Claim
19 words
A semiconductor device as claimed in claim 1 in which said base substrate is made of an n-type semiconductor.
Claim 5
Dependent Claim
34 words
A semiconductor device as claimed in claim 1 which further comprises an insulator region for isolating said bipolar transistor, said insulator region extending from a top of said active layer to said insulator layer.
Claim 6
Dependent Claim
24 words
A semiconductor device as claimed in claim 4 in which said insulator region makes direct contact with said active layer and said electric-field-induced layer.
Claim 7
Dependent Claim
33 words
A semiconductor device as claimed in claim 1 which further comprises a diffusion region formed in said active layer in a vicinity of the interface between said insulator layer and said active layer.
Claim 8
Dependent Claim
24 words
A semiconductor device as claimed in claim 4 wherein said insulator region is spaced apart from said diffusion region to prevent direct contact therewith.
Claim 9
Dependent Claim
223 words
A semiconductor device comprising: a base substrate made of a conductor or a semiconductor material; an insulator layer formed on said base substrate; an active layer made of a p-type semiconductor material and formed on said insulator layer and defining an interface therebetween, said active layer having a bipolar transistor formed therein, said bipolar transistor having a base region, an emitter region and a collector region, each said region formed in said active layer; means for applying a potential difference across said base substrate and said active layer in such a direction that an electric-field-induced inversion layer is formed in said active layer in the vicinity of the interface between said insulator layer and said active layer; and an insulator region extending from the top of and through said active layer to said insulator layer for isolating said bipolar transistor, said electric-field-induced inversion layer being used as a portion of a collector electrode of said bipolar transistor, said base region comprising a p-type region formed in said active layer and extending to and reaching said insulator layer, said emitter region comprising an n-type region formed in said p-type region, said collector region comprising a diffusion region formed in said active layer and connected to said electric-field-induced layer, and said insulator region being spaced apart from said diffusion region to prevent direct contact therewith.
Claim 10
Dependent Claim
223 words
A semiconductor device comprising: a base substrate made of a conductor or a semiconductor material; an insulator layer formed on said base substrate; an active layer made of a p-type semiconductor material and formed on said insulator layer and defining an interface therebetween, said active layer having a bipolar transistor formed therein, said bipolar transistor having a base region, an emitter region and a collector region, each said region formed in said active layer; means for applying a potential difference across said base substrate and said active layer in such a direction that an electric-field-induced inversion layer is formed in said active layer in the vicinity of the interface between said insulator layer and said active layer; and an insulator region extending from the top of and through said active layer to said insulator layer for isolating said bipolar transistor, said electric-field-induced inversion layer being used as a portion of a collector electrode of said bipolar transistor, said base region comprising a p-type region formed in said active layer and extending to and reaching said insulator layer, said emitter region comprising an n-type region formed in said p-type region, said collector region comprising a diffusion region formed in said active layer and connected to said electric-field-induced layer, and said insulator region being spaced apart from said diffusion region to prevent direct contact therewith.
Claim 11
Dependent Claim
20 words
A semiconductor device as claimed in claim 8 in which said base substrate is made of a p-type semiconductor material.
Claim 12
Dependent Claim
25 words
A semiconductor device as claimed in claim 8 in which said insulator region makes a direct contact with said active layer and said electric-field-induced layer.
References Cited (Backward Citations)
US4910562A
Cited
US4885623A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-03-10 | 1995-09-09 | 1996-03-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-10 | 1999-09-09 | 2000-03-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-03-10 | 2003-09-09 | 2004-03-10 | $7700.00 | Window Closed / Lapsed |