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US5093150A Expired / Lapsed US ⏱️ 0.0 years remaining

Synthesis method by plasma chemical vapor deposition

Assignee: Alps Alpine Co Ltd
•
Filing: 1990-03-14
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Granted: 1992-03-03
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Expires: 2010-03-14
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Abstract

Abstract A method of synthesizing metal-containing material by a plasma chemical vapor deposition comprises converting a reactive gas containing metal atoms into plasmas in a reaction chamber and supplying an inert gas from outside the plasma region in the reaction chamber. Ceramic films of excellent quality can be synthesized under stable conditions in an industrial mass production process.

Inventors

  • 👤 Yoshihiro Someno
  • 👤 Toshio Hirai
  • 👤 Makoto Sasaki

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-05 10:28
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/50; C23C16/511; C23C16/22; C23C16/30; C23C16/301; C23C16/303

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 100 words
A method of synthesizing metal-containing material by plasma chemical vapor deposition, which comprises the steps of: introducing a reactive gas containing metal atoms into a reaction chamber through at least one first inlet; converting said reactive gas into plasmas in said reaction chamber; supplying an inert gas into said reaction chamber through a second inlet, said second inlet being at a location spaced apart from said plasma region and said first inlet; and depositing said metal-containing material on a surface; wherein said inert gas is substantially pure and in a substantially unexcited state when it passes through said second inlet.
Claim 2
Independent Claim 100 words
A method of synthesizing metal-containing material by plasma chemical vapor deposition, which comprises the steps of: introducing a reactive gas containing metal atoms into a reaction chamber through at least one first inlet; converting said reactive gas into plasmas in said reaction chamber; supplying an inert gas into said reaction chamber through a second inlet, said second inlet being at a location spaced apart from said plasma region and said first inlet; and depositing said metal-containing material on a surface; wherein said inert gas is substantially pure and in a substantially unexcited state when it passes through said second inlet.
Claim 3
Dependent Claim 20 words
A synthesis method as defined in claim 1, wherein the inert gas is continuously supplied at a constant flow rate.
Claim 4
Dependent Claim 20 words
A synthesis method as defined in claim 1, wherein the reactive gas is converted into plasmas by means of microwaves.
Claim 5
Independent Claim 94 words
A method of synthesizing aluminum nitride by plasma chemical vapor deposition, which comprises the steps of: introducing a gas containing aluminum bromide into a reaction chamber through at least one first inlet; converting said gas into plasmas in said reaction chamber; supplying argon into said reaction chamber through a second inlet, said second inlet being at a location spaced apart from said plasma region and said first inlet; and depositing aluminum nitride on a surface; wherein said argon is substantially pure and in a substantially unexcited state when it passes through said second inlet.
Claim 6
Independent Claim 94 words
A method of synthesizing aluminum nitride by plasma chemical vapor deposition, which comprises the steps of: introducing a gas containing aluminum bromide into a reaction chamber through at least one first inlet; converting said gas into plasmas in said reaction chamber; supplying argon into said reaction chamber through a second inlet, said second inlet being at a location spaced apart from said plasma region and said first inlet; and depositing aluminum nitride on a surface; wherein said argon is substantially pure and in a substantially unexcited state when it passes through said second inlet.

References Cited (Backward Citations)

US4965090A Cited
US4937094A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1995-03-03 1995-09-02 1996-03-03 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1999-03-03 1999-09-02 2000-03-03 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2003-03-03 2003-09-02 2004-03-03 $7700.00 Window Closed / Lapsed

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