US5089860A
Expired / Lapsed
US
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Quantum well device with control of spontaneous photon emission, and method of manufacturing same
Assignee: The University of Texas System
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Filing: 1990-06-25
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Granted: 1992-02-18
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Expires: 2010-06-25
Abstract
Abstract In the present invention, spontaneous photon emission intensity in a semiconductor quantum well is strongly influenced by a highly reflecting interface, with the quantum well to interface spacing being less than the optical emission wavelength of the quantum well. An enhancement/inhibition ratio on the order of 10 is possible according to the present invention using a single reflector, and enhancement/inhibition ratios on the order of 1000 are possible when two reflectors are used in the quantum well light-emitting diode structures. In addition, according to the present invention, the gain, directionality, and efficiency of a vertical cavity surface-emitting laser can also be greatly improved. A method of making a device according to the present invention is also presented.
Inventors
- 👤 Dennis G. Deppe
- 👤 Thomas J. Rogers
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 05:12
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/812; H01; H01S; H01S5/00; H01S5/10; H01S5/18; H01S5/183; H01S5/18361; H01S5/18358; H10H20/84; H10H20/841
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
75 words
A light-emitting semiconductor device with improved spontaneous photon emission, comprising: a quantum well capable of emitting light of an optical emission wavelength, a thickness of said quantum well being much less than said optical wavelength; and a single reflector spaced from said quantum well a distance substantially equal to one-fourth said optical emission wavelength, said reflector having means for causing phase shift of said emission wavelength, to control spontaneous photon emission of said quantum well.
Claim 2
Dependent Claim
75 words
A light-emitting semiconductor device with improved spontaneous photon emission, comprising: a quantum well capable of emitting light of an optical emission wavelength, a thickness of said quantum well being much less than said optical wavelength; and a single reflector spaced from said quantum well a distance substantially equal to one-fourth said optical emission wavelength, said reflector having means for causing phase shift of said emission wavelength, to control spontaneous photon emission of said quantum well.
Claim 3
Dependent Claim
121 words
A light-emitting semiconductor device with improved spontaneous photon emission, comprising: a quantum well capable of emitting light of an optical emission wavelength, a thickness of said quantum well being much less than said optical wavelength; a first reflector spaced from said quantum well a distance substantially equal to said optical emission wavelength; a second reflector spaced from said quantum well a distance substantially equal to one-fourth said optical emission wavelength, whereby said quantum well is intermediate said first and second reflectors, and wherein a reflectivity of said first reflector is less than a reflectivity of said second reflector; and said second reflector having means for causing phase shift of said emission wavelength to control spontaneous photon emission of said quantum well.
Claim 4
Dependent Claim
121 words
A light-emitting semiconductor device with improved spontaneous photon emission, comprising: a quantum well capable of emitting light of an optical emission wavelength, a thickness of said quantum well being much less than said optical wavelength; a first reflector spaced from said quantum well a distance substantially equal to said optical emission wavelength; a second reflector spaced from said quantum well a distance substantially equal to one-fourth said optical emission wavelength, whereby said quantum well is intermediate said first and second reflectors, and wherein a reflectivity of said first reflector is less than a reflectivity of said second reflector; and said second reflector having means for causing phase shift of said emission wavelength to control spontaneous photon emission of said quantum well.
Claim 5
Dependent Claim
22 words
The device of claim 2, wherein said reflectivity of said first reflector is much less than said reflectivity of said second reflector.
Claim 6
Dependent Claim
23 words
The device of claim 2, wherein said quantum well is placed at an anti-node of said electromagnetic vacuum field within said semiconductor device.
Claim 7
Dependent Claim
36 words
The device of claim 2, further comprising: a material of a first conductivity intermediate said first reflector and said quantum well; and a material of a second conductivity intermediate said second reflector and said quantum well.
Claim 8
Dependent Claim
18 words
The device of claim 1, wherein the quantum well is at an anti-node of said electromagnet vacuum field.
Claim 9
Dependent Claim
18 words
The device of claim 1, wherein the quantum well is at a node of said electromagnetic vacuum field.
Claim 10
Dependent Claim
42 words
The device of claim 1, further comprising: a material of first conductivity adjacent a first side of said quantum well intermediate said reflector and said quantum well; and a material of a second conductivity adjacent a second side of said quantum well.
Claim 11
Dependent Claim
22 words
The device of claim 2, wherein said quantum well is at a node of an electromagnetic vacuum field within said semiconductor device.
Claim 12
Dependent Claim
22 words
The device of claim 2, wherein said quantum well is at an anti-node of an electromagnetic vacuum field within said semiconductor device.
Claim 13
Dependent Claim
16 words
The device of claim 2, said second reflector comprising materials of alternating values of refractive index.
Claim 14
Dependent Claim
81 words
A light-emitting semiconductor device with improved spontaneous photon emission, comprising: a quantum well capable of emitting light of an optical emission wavelength, a thickness of said quantum well being much less than said optical wavelength; and a single reflector having a reflectivity of at most 0.998 and spaced from said quantum well a distance substantially equal to one-fourth said optical emission wavelength; said quantum well being placed at an anti-node or node of an electromagnetic vacuum field within said semiconductor device.
Claim 15
Dependent Claim
81 words
A light-emitting semiconductor device with improved spontaneous photon emission, comprising: a quantum well capable of emitting light of an optical emission wavelength, a thickness of said quantum well being much less than said optical wavelength; and a single reflector having a reflectivity of at most 0.998 and spaced from said quantum well a distance substantially equal to one-fourth said optical emission wavelength; said quantum well being placed at an anti-node or node of an electromagnetic vacuum field within said semiconductor device.
Claim 16
Dependent Claim
42 words
The device of claim 12, further comprising: a material of first conductivity adjacent a first side of said quantum well intermediate said reflector and said quantum well; and a material of a second conductivity adjacent a second side of said quantum well.
Claim 17
Dependent Claim
147 words
A light-emitting semiconductor device with improved spontaneous photon emission, comprising: a quantum well capable of emitting light of an optical emission wavelength, a thickness of said quantum well being much less than said optical wavelength; a first reflecting interface spaced from said quantum well a distance substantially equal to said optical emission wavelength; a second reflecting interface including a plurality of material layers of alternating values of refractive index, said plurality of layers having one layer arranged nearest said quantum well and spaced from said quantum well a distance substantially equal to one-fourth said optical emission wavelength, whereby said quantum well is intermediate said first and second reflecting interfaces, and wherein a reflectivity of said first reflecting interface is less than a reflectivity of said second reflecting interface; and said quantum well being at an anti-node or node of an electromagnetic vacuum field within said semiconductor device.
Claim 18
Dependent Claim
147 words
A light-emitting semiconductor device with improved spontaneous photon emission, comprising: a quantum well capable of emitting light of an optical emission wavelength, a thickness of said quantum well being much less than said optical wavelength; a first reflecting interface spaced from said quantum well a distance substantially equal to said optical emission wavelength; a second reflecting interface including a plurality of material layers of alternating values of refractive index, said plurality of layers having one layer arranged nearest said quantum well and spaced from said quantum well a distance substantially equal to one-fourth said optical emission wavelength, whereby said quantum well is intermediate said first and second reflecting interfaces, and wherein a reflectivity of said first reflecting interface is less than a reflectivity of said second reflecting interface; and said quantum well being at an anti-node or node of an electromagnetic vacuum field within said semiconductor device.
References Cited (Backward Citations)
No citation records indexed.
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