Conductivity modulated mosfet

Claim 2

A conductivity modulated metal oxide semiconductor field effect transistor, comprising: a first conductivity type region having a first surface; a high resistance semiconductor region of a second conductivity type having a second surface; a second conductivity type region provided between said first conductivity type region and said high resistance semiconductor region and having an impurity concentration higher than that of said high resistance semiconductor region; a base region of the first conductivity type which is formed in the second surface of said high resistance semiconductor region; a source region of the second conductivity type which is formed in said base region; a gate electrode formed at least on a gate insulating film which is formed on a channel region formed in said base region between said high resistance semiconductor region and said source region; a source electrode ohmic-contacting said source and base regions; and a drain electrode formed on said first surface of the first conductivity type region, wherein said source region comprises a plurality of separated sections in a contact area between said source electrode and said base and source regions to set a specific drain current of said transistor at a value lower than a latch-up current of the transistor, the specific drain current being defined as a drain current when 10 2 ·d(V) is applied to said gate electrode and 100 V is applied to said drain electrode, wherein when a 100-V constant voltage source is directly connected between said source and drain electrodes of said conductivity modulated metal oxide semiconductor field effect transistor, a gate voltage is increased from 0 V to 10 2 ·d(V) within 200 nsec to make said conductivity modulated metal oxide semiconductor field effect transistor turned on, said transistor is turned on for 10 μsec, and thereafter the gate voltage is decreased from 10 2 ·d(V) to 0 (V) within 200 nsec, said conductivity modulated metal oxide semiconductor field effect transistor is not latched up but turned off at a temperature at 25° C., wherein d is the thickness (μm) of the gate insulating film.

Claim 3

The transistor according to claim 1, wherein portions of said high resistance semiconductor region are surrounded by said base region to constitute island regions.

Claim 4

The transistor according to claim 2, wherein peripheries of said portions have rectangular shapes.

Claim 5

The transistor according to claim 1, wherein said gate electrode comprises a polycrystalline silicon film and a metal film formed on a portion of said polycrystalline silicon film, said base region of the first conductivity being formed under said metal film.

Claim 6

The transistor according to claim 1, wherein portions of said high resistance semiconductor region are surrounded by said base region to constitute island regions.

Claim 7

The transistor according to claim 5, wherein peripheries of said portions have rectangular shapes.

Claim 8

The transistor according to claim 1, wherein said gate electrode comprises a polycrystalline silicon film and a metal film formed on a portion of said polycrystalline silicon film, said base region of the first conductivity being formed under said metal film.

Claim 9

A conductivity modulated metal oxide semiconductor field effect transistor, comprising: a first conductivity type region having a first surface; a high resistance semiconductor region of a second conductivity type having a second surface; a second conductivity type region provided between said first conductivity type region and said high resistance semiconductor region and having an impurity concentration higher than that of said high resistance semiconductor region; a base region of the first conductivity type which is formed in the second surface of said high resistance semiconductor region; a source region of the second conductivity type which is formed in said base region, a gate electrode formed at least on a gate insulating film which is formed on a channel region formed in said base region between said high resistance semiconductor region and said source region; a source electrode ohmic-contacting said source and base regions; and a drain electrode formed on said first surface of the first conductivity type region; wherein W/T is set at a value less than 1 to set a specific drain current of said transistor at a value lower than a latch-up current of the transistor, the specific drain current being defined as a drain current when 10 2 ·d(V) is applied to said gate electrode and 100 V is applied to said drain electrode, wherein when a 100-V constant voltage source is directly connected between said source and drain electrodes of said conductivity modulated metal oxide semiconductor field effect transistor, a gate voltage is increased from 0 V to 10 2 ·d(V) within 200 nsec to make said conductivity modulated metal oxide semiconductor field effect transistor turned on, said transistor is turned on for 10 μsec, and thereafter the gate voltage is decreased from 10 2 ·d(V) to 0 (V) within 200 nsec, said conductivity modulated metal oxide semiconductor field effect transistor is not latched up but turned off at a temperature at 25° C., wherein d is the thickness (μm) of the gate insulating film, W is the channel width (μm) within 1 cm 2 of an active region and T is a perimeter (μm) of said base region which contacts said high resistance semiconductor region within 1 cm 2 of the active region.

Claim 10

A conductivity modulated metal oxide semiconductor field effect transistor, comprising: a first conductivity type region having a first surface; a high resistance semiconductor region of a second conductivity type having a second surface; a second conductivity type region provided between said first conductivity type region and said high resistance semiconductor region and having an impurity concentration higher than that of said high resistance semiconductor region; a base region of the first conductivity type which is formed in the second surface of said high resistance semiconductor region; a source region of the second conductivity type which is formed in said base region, a gate electrode formed at least on a gate insulating film which is formed on a channel region formed in said base region between said high resistance semiconductor region and said source region; a source electrode ohmic-contacting said source and base regions; and a drain electrode formed on said first surface of the first conductivity type region; wherein W/T is set at a value less than 1 to set a specific drain current of said transistor at a value lower than a latch-up current of the transistor, the specific drain current being defined as a drain current when 10 2 ·d(V) is applied to said gate electrode and 100 V is applied to said drain electrode, wherein when a 100-V constant voltage source is directly connected between said source and drain electrodes of said conductivity modulated metal oxide semiconductor field effect transistor, a gate voltage is increased from 0 V to 10 2 ·d(V) within 200 nsec to make said conductivity modulated metal oxide semiconductor field effect transistor turned on, said transistor is turned on for 10 μsec, and thereafter the gate voltage is decreased from 10 2 ·d(V) to 0 (V) within 200 nsec, said conductivity modulated metal oxide semiconductor field effect transistor is not latched up but turned off at a temperature at 25° C., wherein d is the thickness (μm) of the gate insulating film, W is the channel width (μm) within 1 cm 2 of an active region and T is a perimeter (μm) of said base region which contacts said high resistance semiconductor region within 1 cm 2 of the active region.

Claim 11

The transistor according to claim 8, wherein portions of said high resistance semiconductor region are surrounded by said base region to constitute island regions.

Claim 12

The transistor according to claim 9, wherein peripheries of said portions have rectangular shapes.

Claim 13

The transistor according to claim 8, wherein said gate electrode comprises a polycrystalline silicon film and a metal film formed on a portion of said polycrystalline silicon film, said base region of the first conductivity being formed under said metal film.