US5086012A
Expired / Lapsed
US
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Method for forming a field oxide layer
Assignee: SK Hynix Inc
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Filing: 1991-03-05
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Granted: 1992-02-04
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Expires: 2011-03-05
Abstract
Abstract A method for forming a field oxide layer in an integrated semiconductor device is disclosed. A first oxide layer and a first photoresist layer is sequentially deposited on a silicon substrate. A first separation mask pattern is then formed by removing a portion of the first photoresist layer to expose a portion of the first oxide layer, such that a plurality of separation regions is defined at the silicon substrate. An ion-implantation process is performed through the exposed first oxide layer into a portion of the silicon substrate positioned at the defined separation regions utilizing the first separation mask pattern. The first photoresist layer remaining on the first oxide layer is removed to expose the entire surface of the first oxide layer. A second oxide layer and a second photoresist layer is sequentially deposited on the entire surface of the first oxide layer. A second separation mask pattern is formed by removing the second photoresist layer except for those portions of the second photoresist layer positioned above the defined separation regions to expose a portion of the second oxide layer. A plurality of field oxide layers is formed at the defined separation regions by sequentially removing the exposed portion of the second oxide layer and the first oxide layer thereunder utilizing the second separation mask pattern. The remaining second photoresist layer is removed to expose the plurality of field oxide layer.
Inventors
- 👤 Son K. Sik
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 21:41
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0125; H10W10/10; H10W10/13; H10W10/0126; H10W10/0127
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
240 words
A method for forming a field oxide layer in an integrated semiconductor device comprises: providing a silicon substrate; sequentially depositing a first oxide layer and a first photoresist layer on the silicon substrate; forming a first separation mask pattern by removing a portion of the first photoresist layer to expose a portion of the first oxide layer, thereby defining a plurality of separation regions at the silicon substrate, with each separation region being spaced apart relative to each other; performing an ion-implantation process through the exposed first oxide layer into a portion of the silicon substrate positioned at the defined separation regions utilizing the first separation mask pattern; removing the first photoresist layer remaining on the first oxide layer to thereby expose the entire surface of the first oxide layer; sequentially depositing a second oxide layer and a second photoresist layer on the entire surface of the first oxide layer; forming a second separation mask pattern by removing the second photoresist layer except for those portions of the second photoresist layer positioned above the defined separation regions, to thereby expose a portion of the second oxide layer; forming a plurality of field oxide layers at the defined separation regions by sequentially removing the exposed portion of the second oxide layer and the first oxide layer thereunder utilizing the second separation mask pattern; and removing the remaining second photoresist layer so positioned to expose the plurality of field oxide layer thereunder.
Claim 2
Independent Claim
240 words
A method for forming a field oxide layer in an integrated semiconductor device comprises: providing a silicon substrate; sequentially depositing a first oxide layer and a first photoresist layer on the silicon substrate; forming a first separation mask pattern by removing a portion of the first photoresist layer to expose a portion of the first oxide layer, thereby defining a plurality of separation regions at the silicon substrate, with each separation region being spaced apart relative to each other; performing an ion-implantation process through the exposed first oxide layer into a portion of the silicon substrate positioned at the defined separation regions utilizing the first separation mask pattern; removing the first photoresist layer remaining on the first oxide layer to thereby expose the entire surface of the first oxide layer; sequentially depositing a second oxide layer and a second photoresist layer on the entire surface of the first oxide layer; forming a second separation mask pattern by removing the second photoresist layer except for those portions of the second photoresist layer positioned above the defined separation regions, to thereby expose a portion of the second oxide layer; forming a plurality of field oxide layers at the defined separation regions by sequentially removing the exposed portion of the second oxide layer and the first oxide layer thereunder utilizing the second separation mask pattern; and removing the remaining second photoresist layer so positioned to expose the plurality of field oxide layer thereunder.
Claim 3
Dependent Claim
18 words
The method of claim 1 wherein the silicon substrate further comprises a P-well region and an N-well region.
Claim 4
Dependent Claim
24 words
The method of claim 1 wherein the first separation mask pattern and the second separation mask pattern have opposite polarity relative to each other.
Claim 5
Dependent Claim
34 words
The method of claim 1 wherein the plurality of field oxide layers is formed by isotropically etching the exposed second oxide layer and the first oxide layer thereunder utilizing the second separation mask pattern.
Claim 6
Independent Claim
255 words
A method for forming a field oxide layer in an integrated semiconductor device comprises: providing a silicon substrate including a P-well region and an N-well region; sequentially depositing a first oxide layer and a first photoresist layer on the silicon substrate; forming a first separation mask pattern by removing a portion of the first photoresist layer to expose a portion of the first oxide layer, thereby defining a plurality of separation regions at the silicon substrate, with each separation region being spaced apart relative to each other; performing an ion-implantation process through the exposed first oxide layer into a portion of the P-well region and N-well region of the silicon substrate positioned at the defined separation regions utilizing the first separation mask pattern; removing the first photoresist layer remaining on the first oxide layer to thereby expose the entire surface of the first oxide layer; sequentially depositing a second oxide layer and a second photoresist layer on the entire surface of the first oxide layer; forming a second separation mask pattern by removing the second photoresist layer except for those portions of the second photoresist layer positioned above the defined separation regions, to thereby expose a portion of the second oxide layer; forming a plurality of field oxide layers at the defined separation regions by sequentially removing the exposed portion of the second oxide layer and the first oxide layer thereunder utilizing the second separation mask pattern; and removing the remaining second photoresist layer so positioned to expose the plurality of field oxide layer thereunder.
Claim 7
Independent Claim
255 words
A method for forming a field oxide layer in an integrated semiconductor device comprises: providing a silicon substrate including a P-well region and an N-well region; sequentially depositing a first oxide layer and a first photoresist layer on the silicon substrate; forming a first separation mask pattern by removing a portion of the first photoresist layer to expose a portion of the first oxide layer, thereby defining a plurality of separation regions at the silicon substrate, with each separation region being spaced apart relative to each other; performing an ion-implantation process through the exposed first oxide layer into a portion of the P-well region and N-well region of the silicon substrate positioned at the defined separation regions utilizing the first separation mask pattern; removing the first photoresist layer remaining on the first oxide layer to thereby expose the entire surface of the first oxide layer; sequentially depositing a second oxide layer and a second photoresist layer on the entire surface of the first oxide layer; forming a second separation mask pattern by removing the second photoresist layer except for those portions of the second photoresist layer positioned above the defined separation regions, to thereby expose a portion of the second oxide layer; forming a plurality of field oxide layers at the defined separation regions by sequentially removing the exposed portion of the second oxide layer and the first oxide layer thereunder utilizing the second separation mask pattern; and removing the remaining second photoresist layer so positioned to expose the plurality of field oxide layer thereunder.
Claim 8
Dependent Claim
73 words
The method of claim 5 wherein the ion-implantation process of the silicon substrate is performed by implanting a dopant selected from the group consisting of: B (Boron) or BF 2 (Boro-Fluorine) into the P-well region of the silicon substrate positioned at the defined separation regions and by implanting a dopant selected from the group consisting of: P (Phosphorus) or As (Arsenic) into the N-well region thereof, respectively, with simultaneously application of 20-150 KeV.
Claim 9
Dependent Claim
22 words
The method of claim 6 where the implanted silicon substrate has an impurity number of 10 10 -10 14 cm -2 .
Claim 10
Dependent Claim
24 words
The method of claim 5 wherein the first separation mask pattern and the second separation mask pattern have opposite polarity relative to each other.
Claim 11
Dependent Claim
34 words
The method of claim 5 wherein the plurality of field oxide layers is formed by isotropically etching the exposed second oxide layer and the first oxide layer thereunder utilizing the second separation mask pattern.
Claim 12
Independent Claim
293 words
A method for forming a field oxide layer in an integrated semiconductor device comprises: providing a silicon substrate including a P-well region and an N-well region; sequentially depositing a first oxide layer and a first photoresist layer on the silicon substrate; forming a first separation mask pattern by removing a portion of the first photoresist layer to expose a portion of the first oxide layer, thereby defining a plurality of separation regions at the silicon substrate, with each separation region being spaced apart relative to each other; performing an ion-implantation process through the exposed first oxide layer utilizing the first separation mask pattern, by implanting a dopant selected from the group consisting of: B (Boron) or BF 2 (Boro-Fluorine) into the P-well region of the silicon substrate positioned at the defined separation regions and by implanting a dopant selected from the group consisting of: P (Phosphorus) or As (Arsenic) into the N-well region thereof, respectively, with simultaneously application of 20-150 KeV; removing the first photoresist layer remaining on the first oxide layer to thereby expose the entire surface of the first oxide layer; sequentially depositing a second oxide layer and a second photoresist layer on the entire surface of the first oxide layer; forming a second separation mask pattern by removing the second photoresist layer except for these portions of the second photoresist layer positioned at the defined separation regions, to thereby expose a portion of the second oxide layer; forming a plurality of field oxide layers at the defined separation regions by isotropically etching the exposed portion of the second oxide layer and the first oxide layer thereunder utilizing the second separation mask pattern; and removing the remaining second photoresist layer so positioned to expose the plurality of field oxide layer thereunder.
Claim 13
Independent Claim
293 words
A method for forming a field oxide layer in an integrated semiconductor device comprises: providing a silicon substrate including a P-well region and an N-well region; sequentially depositing a first oxide layer and a first photoresist layer on the silicon substrate; forming a first separation mask pattern by removing a portion of the first photoresist layer to expose a portion of the first oxide layer, thereby defining a plurality of separation regions at the silicon substrate, with each separation region being spaced apart relative to each other; performing an ion-implantation process through the exposed first oxide layer utilizing the first separation mask pattern, by implanting a dopant selected from the group consisting of: B (Boron) or BF 2 (Boro-Fluorine) into the P-well region of the silicon substrate positioned at the defined separation regions and by implanting a dopant selected from the group consisting of: P (Phosphorus) or As (Arsenic) into the N-well region thereof, respectively, with simultaneously application of 20-150 KeV; removing the first photoresist layer remaining on the first oxide layer to thereby expose the entire surface of the first oxide layer; sequentially depositing a second oxide layer and a second photoresist layer on the entire surface of the first oxide layer; forming a second separation mask pattern by removing the second photoresist layer except for these portions of the second photoresist layer positioned at the defined separation regions, to thereby expose a portion of the second oxide layer; forming a plurality of field oxide layers at the defined separation regions by isotropically etching the exposed portion of the second oxide layer and the first oxide layer thereunder utilizing the second separation mask pattern; and removing the remaining second photoresist layer so positioned to expose the plurality of field oxide layer thereunder.
Claim 14
Independent Claim
343 words
A method for forming a field oxide layer in an integrated semiconductor device comprises: providing a silicon substrate; sequentially depositing a first oxide layer, a nitride layer and a first photoresist layer on the silicon substrate; forming a first separation mask pattern by removing a portion of the first photoresist layer to expose a portion of the nitride layer, thereby defining a plurality of separation regions at the silicon substrate, with each separation region being spaced apart relative to each other; removing the exposed portion of the nitride layer positioned at the defined separation regions utilizing the first separation mask pattern, to thereby expose a portion of the first oxide layer positioned thereunder; performing an ion-implantation process through the exposed first oxide layer into a portion of the silicon substrate positioned at the defined separation regions utilizing the first separation mask pattern; removing the first photoresist layer remaining on the nitride layer to thereby expose the remaining nitride layer and the first oxide layer positioned at the defined separation regions; forming a plurality of channel oxide layers on the exposed first oxide layer and into the silicon substrate positioned at the defined separation regions; removing the remaining nitride layer, the underlying first oxide layer and the plurality of channel oxide layers to form a plurality of cavities at the defined separation regions; sequentially depositing a second oxide layer and a second photoresist layer on the entire surface of the resulting structure including the plurality of cavities; forming a second separation mask pattern by removing the second photoresist layer except for those portions of the second photoresist layer positioned above the defined separation regions, to thereby expose a portion of the second oxide layer; forming a plurality of field oxide layers at the plurality of cavities positioned at the defined separation regions by removing the exposed portion of the second oxide layer utilizing the second separation mask pattern to thereby expose a portion the silicon substrate; and removing the remaining second photoresist layer so positioned to expose the plurality of field oxide layers thereunder.
Claim 15
Independent Claim
343 words
A method for forming a field oxide layer in an integrated semiconductor device comprises: providing a silicon substrate; sequentially depositing a first oxide layer, a nitride layer and a first photoresist layer on the silicon substrate; forming a first separation mask pattern by removing a portion of the first photoresist layer to expose a portion of the nitride layer, thereby defining a plurality of separation regions at the silicon substrate, with each separation region being spaced apart relative to each other; removing the exposed portion of the nitride layer positioned at the defined separation regions utilizing the first separation mask pattern, to thereby expose a portion of the first oxide layer positioned thereunder; performing an ion-implantation process through the exposed first oxide layer into a portion of the silicon substrate positioned at the defined separation regions utilizing the first separation mask pattern; removing the first photoresist layer remaining on the nitride layer to thereby expose the remaining nitride layer and the first oxide layer positioned at the defined separation regions; forming a plurality of channel oxide layers on the exposed first oxide layer and into the silicon substrate positioned at the defined separation regions; removing the remaining nitride layer, the underlying first oxide layer and the plurality of channel oxide layers to form a plurality of cavities at the defined separation regions; sequentially depositing a second oxide layer and a second photoresist layer on the entire surface of the resulting structure including the plurality of cavities; forming a second separation mask pattern by removing the second photoresist layer except for those portions of the second photoresist layer positioned above the defined separation regions, to thereby expose a portion of the second oxide layer; forming a plurality of field oxide layers at the plurality of cavities positioned at the defined separation regions by removing the exposed portion of the second oxide layer utilizing the second separation mask pattern to thereby expose a portion the silicon substrate; and removing the remaining second photoresist layer so positioned to expose the plurality of field oxide layers thereunder.
Claim 16
Dependent Claim
18 words
The method of claim 11 wherein the silicon substrate further comprises a P-well region and an N-well region.
Claim 17
Dependent Claim
24 words
The method of claim 11 wherein the first separation mask pattern and the second separation mask pattern have opposite polarity relative to each other.
Claim 18
Dependent Claim
28 words
The method of claim 11 wherein the plurality of field oxide layers is formed by isotropically etching the exposed second oxide layer utilizing the second separation mask pattern.
Claim 19
Independent Claim
358 words
A method for forming a field oxide layer in an integrated semiconductor device comprises: providing a silicon substrate including a P-well region and an N-well region; sequentially depositing a first oxide layer, a nitride layer and a first photoresist layer on the silicon substrate; forming a first separation mask pattern by removing a portion of the first photoresist layer to expose a portion of the nitride layer, thereby defining a plurality of separation regions at the silicon substrate, with each separation region being spaced apart relative to each other; removing the exposed portion of the nitride layer positioned at the defined separation regions utilizing the first separation mask pattern, to thereby expose a portion of the first oxide layer positioned thereunder; performing an ion-implantation process through the exposed first oxide layer into a portion of the P-well region and N-well region of the silicon substrate positioned at the defined separation regions utilizing the first separation mask pattern; removing the first photoresist layer remaining on the nitride layer to thereby expose the remaining nitride layer and the first oxide layer positioned at the defined separation regions; forming a plurality of channel oxide layers on the exposed first oxide layer and into the silicon substrate positioned at the defined separation regions; removing the remaining nitride layer, the underlying first oxide layer and the plurality of channel oxide layers to form a plurality of cavities at the defined separation regions; sequentially depositing a second oxide layer and a second photoresist layer on the entire surface of the resulting structure including the plurality of cavities; forming a second separation mask pattern by removing the second photoresist layer except for those portions of the second photoresist layer positioned above the defined separation regions, to thereby expose a portion of the second oxide layer; forming a plurality of field oxide layers at the plurality of cavities positioned at the defined separation regions by removing the exposed portion of the second oxide layer utilizing the second separation mask pattern to thereby expose a portion the silicon substrate; and removing the remaining second photoresist layer so positioned to expose the plurality of field oxide layers thereunder.
Claim 20
Independent Claim
358 words
A method for forming a field oxide layer in an integrated semiconductor device comprises: providing a silicon substrate including a P-well region and an N-well region; sequentially depositing a first oxide layer, a nitride layer and a first photoresist layer on the silicon substrate; forming a first separation mask pattern by removing a portion of the first photoresist layer to expose a portion of the nitride layer, thereby defining a plurality of separation regions at the silicon substrate, with each separation region being spaced apart relative to each other; removing the exposed portion of the nitride layer positioned at the defined separation regions utilizing the first separation mask pattern, to thereby expose a portion of the first oxide layer positioned thereunder; performing an ion-implantation process through the exposed first oxide layer into a portion of the P-well region and N-well region of the silicon substrate positioned at the defined separation regions utilizing the first separation mask pattern; removing the first photoresist layer remaining on the nitride layer to thereby expose the remaining nitride layer and the first oxide layer positioned at the defined separation regions; forming a plurality of channel oxide layers on the exposed first oxide layer and into the silicon substrate positioned at the defined separation regions; removing the remaining nitride layer, the underlying first oxide layer and the plurality of channel oxide layers to form a plurality of cavities at the defined separation regions; sequentially depositing a second oxide layer and a second photoresist layer on the entire surface of the resulting structure including the plurality of cavities; forming a second separation mask pattern by removing the second photoresist layer except for those portions of the second photoresist layer positioned above the defined separation regions, to thereby expose a portion of the second oxide layer; forming a plurality of field oxide layers at the plurality of cavities positioned at the defined separation regions by removing the exposed portion of the second oxide layer utilizing the second separation mask pattern to thereby expose a portion the silicon substrate; and removing the remaining second photoresist layer so positioned to expose the plurality of field oxide layers thereunder.
Claim 21
Dependent Claim
73 words
The method of claim 15 wherein the ion-implantation process of the silicon substrate is performed by implanting a dopant selected from the group consisting of: B (Boron) or BF 2 (Boro-Fluorine) into the P-well region of the silicon substrate positioned at the defined separation regions and by implanting a dopant selected from the group consisting of: P (Phosphorus) or As (Arsenic) into the N-well region thereof, respectively, with simultaneously application of 20-150 KeV.
Claim 22
Dependent Claim
22 words
The method of claim 16 where the implanted silicon substrate has an impurity number of 10 10 -10 14 cm -2 .
Claim 23
Dependent Claim
24 words
The method of claim 15 wherein the first separation mask pattern and the second separation mask pattern have opposite polarity relative to each other.
Claim 24
Dependent Claim
28 words
The method of claim 15 wherein the plurality of field oxide layers is formed by isotropically etching the exposed second oxide layer utilizing the second separation mask pattern.
Claim 25
Independent Claim
395 words
A method for forming a field oxide layer in an integrated semiconductor device comprises: providing a silicon substrate including a P-well region and an N-well region; sequentially depositing a first oxide layer, a nitride layer and a first photoresist layer on the silicon substrate; forming a first separation mask pattern by removing a portion of the first photoresist layer to expose a portion of the nitride layer, thereby defining a plurality of separation regions at the silicon substrate, with each separation region being spaced apart relative to each other; removing the exposed portion of the nitride layer positioned at the defined separation regions utilizing the first separation mask pattern, to thereby expose a portion of the first oxide layer positioned thereunder; removing the first photoresist layer remaining on the nitride layer to thereby expose the remaining nitride layer and the first oxide layer positioned at the defined separation regions; forming a plurality of channel oxide layers on the exposed first oxide layer and into the silicon substrate positioned at the defined separation regions; removing the remaining nitride layer, the underlying first oxide layer and the plurality of channel oxide layers to form a plurality of cavities at the defined separation regions; performing an ion-implantation process into the plurality of cavities positioned at the defined separation regions by implanting a dopant selected from the group consisting of: B (Boron) or BF 2 (Boro-Fluorine) into the cavities positioned at the P-well region of the silicon substrate and by implanting a dopant selected from the group of: P(Phosphorus) or As(Arsenic) into the cavities positioned at the N-well region thereof, respectively, with simultaneously application of 20-150 KeV; sequentially depositing a second oxide layer and a second photoresist layer on the entire surface of the resulting structure including the plurality of cavities; forming a second separation mask pattern by removing the second photoresist layer except for those portions of the second photoresist layer positioned above the defined separation regions, to thereby expose a portion of the second oxide layer; forming a plurality of field oxide layers at the plurality of cavities positioned at the defined separation regions by isotropically etching the exposed portion of the second oxide layer utilizing the second separation mask pattern to thereby expose a portion the silicon substrate; and removing the remaining second photoresist layer so positioned to expose the plurality of field oxide layers thereunder.
Claim 26
Independent Claim
395 words
A method for forming a field oxide layer in an integrated semiconductor device comprises: providing a silicon substrate including a P-well region and an N-well region; sequentially depositing a first oxide layer, a nitride layer and a first photoresist layer on the silicon substrate; forming a first separation mask pattern by removing a portion of the first photoresist layer to expose a portion of the nitride layer, thereby defining a plurality of separation regions at the silicon substrate, with each separation region being spaced apart relative to each other; removing the exposed portion of the nitride layer positioned at the defined separation regions utilizing the first separation mask pattern, to thereby expose a portion of the first oxide layer positioned thereunder; removing the first photoresist layer remaining on the nitride layer to thereby expose the remaining nitride layer and the first oxide layer positioned at the defined separation regions; forming a plurality of channel oxide layers on the exposed first oxide layer and into the silicon substrate positioned at the defined separation regions; removing the remaining nitride layer, the underlying first oxide layer and the plurality of channel oxide layers to form a plurality of cavities at the defined separation regions; performing an ion-implantation process into the plurality of cavities positioned at the defined separation regions by implanting a dopant selected from the group consisting of: B (Boron) or BF 2 (Boro-Fluorine) into the cavities positioned at the P-well region of the silicon substrate and by implanting a dopant selected from the group of: P(Phosphorus) or As(Arsenic) into the cavities positioned at the N-well region thereof, respectively, with simultaneously application of 20-150 KeV; sequentially depositing a second oxide layer and a second photoresist layer on the entire surface of the resulting structure including the plurality of cavities; forming a second separation mask pattern by removing the second photoresist layer except for those portions of the second photoresist layer positioned above the defined separation regions, to thereby expose a portion of the second oxide layer; forming a plurality of field oxide layers at the plurality of cavities positioned at the defined separation regions by isotropically etching the exposed portion of the second oxide layer utilizing the second separation mask pattern to thereby expose a portion the silicon substrate; and removing the remaining second photoresist layer so positioned to expose the plurality of field oxide layers thereunder.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
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| 7.5 Years (Year 8) | 1999-02-03 | 1999-08-05 | 2000-02-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-02-03 | 2003-08-05 | 2004-02-04 | $7700.00 | Window Closed / Lapsed |