US5084420A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Resistor with side wall contact
Assignee: Promos Technologies Inc
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Filing: 1990-02-14
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Granted: 1992-01-28
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Expires: 2010-02-14
Abstract
Abstract A resistor located above the semiconductive substrate of an integrated circuit chip can be made smaller than prior art resistors because no area is allocated for resistor contacts. During manufacture, a resistive strip having the width of the intended resistor is formed. A photoresist mask protects the top and sides of the resistive strip where the resistor is located, and etching exposes the ends but not the top and sides of the resistor. Contact to the resistor occurs at the upwardly extending (usually near vertical) end surfaces of the resistor.
Inventors
- 👤 Nan-Hsiung Tsai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 12:23
CPC Classifications
H; H10; H10B; H10B10/00; H10B10/15; H01; H01C; H01C1/00; H01C1/02; H01C1/034; H01C1/14; H10D; H10D88/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
161 words
A method for making a resistor above a horizontal semiconductor surface comprising the steps of: forming a resistive material upon an insulating horizontal structural layer above said horizontal semiconductor surface and patterning said resistive material such that part of said resistive material has a width of a to-be-formed resistor; forming an insulating material upon said resistive material; patterning said resistive material and said insulating material using a single mask, thereby forming two exposed upwardly extending surfaces of said resistive material, a first upwardly extending surface and a second upwardly extending surface: forming a conductive layer against said insulating material, said two exposed upwardly extending surfaces of said resistive material, and said horizontal structural layer; and patterning said conductive layer to form at least two isolated conductive regions, a first isolated conductive region and a second isolated conductive region, said first isolated conductive region contacting said first upwardly extending surface and said second isolated conductive region contacting said second upwardly extending surface.
Claim 2
Independent Claim
161 words
A method for making a resistor above a horizontal semiconductor surface comprising the steps of: forming a resistive material upon an insulating horizontal structural layer above said horizontal semiconductor surface and patterning said resistive material such that part of said resistive material has a width of a to-be-formed resistor; forming an insulating material upon said resistive material; patterning said resistive material and said insulating material using a single mask, thereby forming two exposed upwardly extending surfaces of said resistive material, a first upwardly extending surface and a second upwardly extending surface: forming a conductive layer against said insulating material, said two exposed upwardly extending surfaces of said resistive material, and said horizontal structural layer; and patterning said conductive layer to form at least two isolated conductive regions, a first isolated conductive region and a second isolated conductive region, said first isolated conductive region contacting said first upwardly extending surface and said second isolated conductive region contacting said second upwardly extending surface.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-01-27 | 1995-07-29 | 1996-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-27 | 1999-07-29 | 2000-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-27 | 2003-07-29 | 2004-01-28 | $7700.00 | Window Closed / Lapsed |