Method of manufacturing a semiconductor device including connecting a monocrystalline aluminum wire

Claim 1

A method of manufacturing a semiconductor device comprising the steps of: forming a insulating film on a semiconductor region including an impurity; forming in the insulating film a first contact hole, which reaches the semiconductor region; forming a monocrystalline semiconductor film on the portion of the semiconductor region which is exposed by the first contact hole and on the insulating film; forming a monocrystalline aluminum film on the monocrystalline semiconductor film; removing the portion of the aluminum film in the first contact hole, thereby forming in the aluminum film a second contact hole, which overlaps the first contact hole; and forming a tungsten film in the second contact hole.

Claim 2

A method of manufacturing a semiconductor device comprising the steps of: forming a insulating film on a semiconductor region including an impurity; forming in the insulating film a first contact hole, which reaches the semiconductor region; forming a monocrystalline semiconductor film on the portion of the semiconductor region which is exposed by the first contact hole and on the insulating film; forming a monocrystalline aluminum film on the monocrystalline semiconductor film; removing the portion of the aluminum film in the first contact hole, thereby forming in the aluminum film a second contact hole, which overlaps the first contact hole; and forming a tungsten film in the second contact hole.

Claim 9

A method of manufacturing a semiconductor device comprising the steps of: forming an MOSFET having a source region, a drain region, and a gate electrode in the surface region of a semiconductor substrate; forming an insulating film on the entire semiconductor substrate; forming in said insulating film first and second contact holes which reach said source and drain regions, respectively; forming a monocrystalline semiconductor film on the portions of said source and drain regions which are exposed by said first and second contact holes, and on said insulating film; forming a monocrystalline aluminum film on said monocrystalline semiconductor film; removing the portions of said aluminum film in said first and second contact holes, thereby forming third and fourth contact holes which overlap said first and second contact holes, respectively; forming tungsten films in said third and fourth contact holes; and patterning said monocrystalline semiconductor film and said monocrystalline aluminum film.

Claim 10

A method of manufacturing a semiconductor device comprising the steps of: forming an MOSFET having a source region, a drain region, and a gate electrode in the surface region of a semiconductor substrate; forming an insulating film on the entire semiconductor substrate; forming in said insulating film first and second contact holes which reach said source and drain regions, respectively; forming a monocrystalline semiconductor film on the portions of said source and drain regions which are exposed by said first and second contact holes, and on said insulating film; forming a monocrystalline aluminum film on said monocrystalline semiconductor film; removing the portions of said aluminum film in said first and second contact holes, thereby forming third and fourth contact holes which overlap said first and second contact holes, respectively; forming tungsten films in said third and fourth contact holes; and patterning said monocrystalline semiconductor film and said monocrystalline aluminum film.