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US5083173A Expired / Lapsed US ⏱️ 0.0 years remaining

Charge coupled device for a solid state image pick-up device

Assignee: Panasonic Holdings Corp
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Filing: 1990-12-14
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Granted: 1992-01-21
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Expires: 2010-12-14
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Abstract

Abstract Signal charge conveying regions are made as oblong depletion regions which are formed in operation state along and at the vicinity of side walls of a trench or groove in a seimconductor imaging device, thereby improving resolution power, dynamic range, sensitivity and S/N characteristics are improved.

Inventors

  • 👤 Takahiro Yamada
  • 👤 Sumio Terakawa

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 22:59
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/153

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 175 words
A charge coupled device for a soild state image pick-up device comprising: a semiconductor layer of a second conductivity type having plural first oblong grooves in one direction, and plural second oblong grooves perpendicular to and crossing said first oblong grooves, said first oblong grooves being deeper in said semiconductor layer than said second oblong grooves; an insulation film formed on side walls of said first and second grooves and a surface of said semiconductor layer: plural stacks each comprising a photoelectric conversion region of a first conductivity type and a read-out gate region of said second conductivity type which are two-dimensionally formed in said semiconductor layer, underneath said isulation film and among said first and second oblong grooves; plural oblong charge conveying regions of said first conductivity type for conveying signal charge regions which are formed in said semiconductor layer, underneath said read-out gate regions and among said first oblong grooves in a longitudinal direction of said first oblong grooves; and plural gate electrodes formed in said first oblong grooves without overlapping each other.
Claim 2
Dependent Claim 175 words
A charge coupled device for a soild state image pick-up device comprising: a semiconductor layer of a second conductivity type having plural first oblong grooves in one direction, and plural second oblong grooves perpendicular to and crossing said first oblong grooves, said first oblong grooves being deeper in said semiconductor layer than said second oblong grooves; an insulation film formed on side walls of said first and second grooves and a surface of said semiconductor layer: plural stacks each comprising a photoelectric conversion region of a first conductivity type and a read-out gate region of said second conductivity type which are two-dimensionally formed in said semiconductor layer, underneath said isulation film and among said first and second oblong grooves; plural oblong charge conveying regions of said first conductivity type for conveying signal charge regions which are formed in said semiconductor layer, underneath said read-out gate regions and among said first oblong grooves in a longitudinal direction of said first oblong grooves; and plural gate electrodes formed in said first oblong grooves without overlapping each other.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1995-01-20 1995-07-22 1996-01-21 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1999-01-20 1999-07-22 2000-01-21 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2003-01-20 2003-07-22 2004-01-21 $7700.00 Window Closed / Lapsed

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