US5077596A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Mitsubishi Electric Corp
•
Filing: 1990-07-20
•
Granted: 1991-12-31
•
Expires: 2010-07-20
Abstract
Abstract A semiconductor device in which a plurality of circuit elements are disposed on a chip, and the respective circuit elements are connected to each other by a transmission line and an input/output probe pad for contacting a high frequency probe at opposite ends of the chip. The transmission line connecting respective circuit elements includes a separating section for connecting and disconnecting elements and an auxiliary probe pad that may be contacted by a high frequency probe disposed between the circuit elements.
Inventors
- 👤 Akira Inoue
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 17:48
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/28; G01R31/316
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
90 words
A semiconductor device comprising: a plurality of circuit elements disposed on a semiconductor chip; a transmission line connecting the respective elements on a chip to each other; input and output probe pads for contacting with a high frequency probe disposed adjacent respective circuit elements; separation means for disconnecting the respective circuit elements from each other, said separating means being disposed on both sides of the transmission line; and auxiliary probe pads for contacting with a high frequency probe respectively disposed between said separation means and each of said circuit elements.
Claim 2
Dependent Claim
90 words
A semiconductor device comprising: a plurality of circuit elements disposed on a semiconductor chip; a transmission line connecting the respective elements on a chip to each other; input and output probe pads for contacting with a high frequency probe disposed adjacent respective circuit elements; separation means for disconnecting the respective circuit elements from each other, said separating means being disposed on both sides of the transmission line; and auxiliary probe pads for contacting with a high frequency probe respectively disposed between said separation means and each of said circuit elements.
Claim 3
Dependent Claim
23 words
A semiconductor device as defined in claim 1 wherein said separating means comprises a switching circuit for connecting and disconnecting said circuit elements.
Claim 4
Dependent Claim
22 words
A semiconductor device as defined in claim 2 wherein said circuit elements comprise a low noise amplifier and a high power amplifier.
Claim 5
Dependent Claim
53 words
A semiconductor device as defined in claim 3 wherein said switching circuit comprises a an FET having a source, a drain, and a gate terminal and an inductor connected in parallel with said source and drain terminals for switching said FET by varying the voltage applied to the gate terminal of said FET.
Claim 6
Dependent Claim
63 words
A semiconductor device as defined in claim 1 wherein said circuit elements comprise a phase shifter, a low noise amplifier, and a high power amplifier and said separating means comprises a first switching circuit for connecting and disconnecting said phase shifter and said blow noise amplifier and a second switching circuit for connecting and disconnecting said phase shifter and said high power amplifier.
Claim 7
Dependent Claim
73 words
A semiconductor device as defined in claim 5 wherein aid first and second switching circuits each comprise an FET, each having a source, a drain, and a gate terminal and an inductor connected in parallel with the source and drain terminals of each FET for selectively connecting said phase shifter to said low noise amplifier and to said high power amplifier by varying the voltages applied to respective gate terminals of said FETs.
Claim 8
Dependent Claim
38 words
A semiconductor device as defined in claim 1 wherein at least one of said circuit elements comprises characteristic alteration means for adjusting the electrical characteristics of the element for removing material removed by irradiation with an energy beam.
Claim 9
Dependent Claim
36 words
A semiconductor device as defined in claim 1 wherein said auxiliary probe pad includes pads disposed on both sides of said transmission line, and said transmission line and said auxiliary probe pad comprise a coplanar line.
Claim 10
Dependent Claim
35 words
A semiconductor device as defined in claim 1 wherein said auxiliary probe pads are disposed only on one side of said transmission line, and said transmission line and said auxiliary probe pads comprise slot lines.
Claim 11
Dependent Claim
26 words
A semicondcutor device as defined in claim 8 wherein the characteristic impedance of said coplanar line is controlled to match that of a high frequency probe.
Claim 12
Dependent Claim
26 words
A semicondcutor device as defined in claim 9 wherein the characteristic impedance of said slot line is controlled to match that of a high frequency probe.
References Cited (Backward Citations)
US4819038A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-12-30 | 1995-07-01 | 1995-12-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-12-30 | 1999-07-01 | 1999-12-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-12-30 | 2003-07-01 | 2003-12-31 | $7700.00 | Window Closed / Lapsed |