US5070385A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Ferroelectric non-volatile variable resistive element
Assignee: RADIANT TECHNOLOGIES A PARTNERSHIP OF NEW MEXICO
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Filing: 1989-10-20
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Granted: 1991-12-03
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Expires: 2009-10-20
Abstract
Abstract An improved non-volatile variable resistance element is disclosed. The resistive element is based on a semiconductor having a resistivity which is determined by the state of polarization of a ferroelectric layer.
Inventors
- 👤 Joseph T. Evans, Jr.
- 👤 Jeff A. Bullington
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 04:52
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/22; H; H10; H10D; H10D86/00; H10D86/80; H10D86/85
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
167 words
A resistive element comprising: a polarizable layer having first and second surfaces comprising a first material; a first contact bonded to said polarizable layer adjacent to said first surface, said first contact being an electrical conductor; and a second contact bonded to said polarizable layer adjacent to said second surface, said second contact comprising a semiconducting material which is doped such that the resistance of said second contact changes in response to a change in the polarization of said polarizable layer, said second contact further comprising first and second electrical connections disposed on said second contact such that the resistance of said second contact can be determined by connecting an electrical circuit between said first and second electrical connections, wherein first material and said semiconducting material are chosen such that ions drifting between said polarizable layer and said second contact do not give rise to a layer between said polarizable layer and said second contact having a dielectric constant substantially less than that of said first material.
Claim 2
Dependent Claim
167 words
A resistive element comprising: a polarizable layer having first and second surfaces comprising a first material; a first contact bonded to said polarizable layer adjacent to said first surface, said first contact being an electrical conductor; and a second contact bonded to said polarizable layer adjacent to said second surface, said second contact comprising a semiconducting material which is doped such that the resistance of said second contact changes in response to a change in the polarization of said polarizable layer, said second contact further comprising first and second electrical connections disposed on said second contact such that the resistance of said second contact can be determined by connecting an electrical circuit between said first and second electrical connections, wherein first material and said semiconducting material are chosen such that ions drifting between said polarizable layer and said second contact do not give rise to a layer between said polarizable layer and said second contact having a dielectric constant substantially less than that of said first material.
Claim 3
Dependent Claim
30 words
The resistive element of claim 1 wherein said first material comprises a lead zirconate titanate and said semiconducting material comprises an oxide, bromide, carbide, nitride, or sulfide of an element.
Claim 4
Dependent Claim
22 words
The resistive element of claim 2 wherein said element is chosen from the group comprising tin, indium, beryllium, zinc, cadmium, and nickel.
Claim 5
Dependent Claim
31 words
The resistive element of claim 1 wherein said first material comprises a lead lanthium zirconate titanate and said semiconducting material comprises an oxide, bromide, carbide, nitride, or sulfide of an element.
Claim 6
Dependent Claim
22 words
The resistive element of claim 2 wherein said element is chosen from the group comprising tin, indium, beryllium, zinc, cadmium, and nickel.
Claim 7
Dependent Claim
13 words
The resistive element of claim 1 wherein said first contact comprises a semiconductor.
Claim 8
Dependent Claim
191 words
A resistive element comprising: a polarizable layer having first and second surfaces comprising a first material; a first contact bonded to said polarizable layer adjacent to said first surface, said first contact comprising a semiconducting material which is doped such that the resistance of said first contact changes in response to a change in the polarization of said polarizable layer; and a second contact bonded to said polarizable layer adjacent to said second surface, said second contact comprising a semiconducting material which is doped such that the resistance of said second contact changes in response to a change in the polarization of said polarizable layer, said second contact further comprising first and second electrical connections disposed on said second contact such that the resistance of said second contact can be determined by connecting an electrical circuit between said first and second electrical connections wherein first material and said semiconducting material are chosen such that ions drifting between said polarizable layer and said second contact do not give rise to a layer between said polarizable layer and said second contact having a dielectric constant simultaneously less than that of said first material.
Claim 9
Dependent Claim
191 words
A resistive element comprising: a polarizable layer having first and second surfaces comprising a first material; a first contact bonded to said polarizable layer adjacent to said first surface, said first contact comprising a semiconducting material which is doped such that the resistance of said first contact changes in response to a change in the polarization of said polarizable layer; and a second contact bonded to said polarizable layer adjacent to said second surface, said second contact comprising a semiconducting material which is doped such that the resistance of said second contact changes in response to a change in the polarization of said polarizable layer, said second contact further comprising first and second electrical connections disposed on said second contact such that the resistance of said second contact can be determined by connecting an electrical circuit between said first and second electrical connections wherein first material and said semiconducting material are chosen such that ions drifting between said polarizable layer and said second contact do not give rise to a layer between said polarizable layer and said second contact having a dielectric constant simultaneously less than that of said first material.
References Cited (Backward Citations)
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