US5068870A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor light emission system
Assignee: Mitsubishi Electric Corp
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Filing: 1990-11-13
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Granted: 1991-11-26
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Expires: 2010-11-13
Abstract
Abstract A semiconductor light emission system, comprising a semiconductor laser part constituted of a second conductive current restricting layer with a striped groove perforated therein, a first conductive clad layer, a first or second conductive active layer, a second conductive clad layer on a first conductive substrate, and a second conductive - first conductive - second conductive bipolar transistor part constituted of said second conductive current restricting layer, first conductive clad layer, first or second conductive active layer, second conductive active layer in a position other than the semiconductor laser part.
Inventors
- 👤 Tetsuya Yagi
- 👤 Misao Hironaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 11:00
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/06; H01S5/062; H01S5/06203; H10; H10H; H10H29/00; H10H29/10; H01S5/0014; H01S5/0035; H01S5/06209; H01S5/06213; H01S5/20; H01S5/22; H01S5/223; H01S5/2232
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
73 words
In a semiconductor light emission system having a semiconductor laser part including a current block layer, a first conductive clad layer, a conductive active layer, a second conductive clad layer on a conductive substrate, and a bi-polar transistor part having a collector, an emitter and a base in a position other than said semiconductor laser part, wherein the intensity of said laser part is controlled by controlling the current injected into the base.
Claim 2
Dependent Claim
73 words
In a semiconductor light emission system having a semiconductor laser part including a current block layer, a first conductive clad layer, a conductive active layer, a second conductive clad layer on a conductive substrate, and a bi-polar transistor part having a collector, an emitter and a base in a position other than said semiconductor laser part, wherein the intensity of said laser part is controlled by controlling the current injected into the base.
Claim 3
Dependent Claim
59 words
A semiconductor device integrating a semiconductor laser and a transistor, said semiconductor device comprising: (a) a plurality of layers of semiconductive material, said plurality of layers having a first region for supporting lasing and a second region, spaced from said first region, said second region including means for diverting the flow of an electric current around said first region.
Claim 4
Dependent Claim
59 words
A semiconductor device integrating a semiconductor laser and a transistor, said semiconductor device comprising: (a) a plurality of layers of semiconductive material, said plurality of layers having a first region for supporting lasing and a second region, spaced from said first region, said second region including means for diverting the flow of an electric current around said first region.
Claim 5
Dependent Claim
51 words
The semiconductor device of claim 2, wherein said second region comprises a bi-polar transistor having a base, emitter and collector, and wherein said transistor is adapted to divert said electric current away from said first region as a function of the magnitude of an electric current passed through said transistor base.
Claim 6
Dependent Claim
74 words
In an integrated semiconductor light emission system, comprising: (a) a semiconductor laser portion, and (b) a bi-polar transistor portion, said semiconductor laser portion including a current block layer, a first conductive clad layer, a conductive active layer, a second conductive clad layer on a conductive substrate, a base, emitter and collector, and wherein at least two of said layers are continuous across said portions and comprises said emitter and base of said transistor portion.
Claim 7
Dependent Claim
74 words
In an integrated semiconductor light emission system, comprising: (a) a semiconductor laser portion, and (b) a bi-polar transistor portion, said semiconductor laser portion including a current block layer, a first conductive clad layer, a conductive active layer, a second conductive clad layer on a conductive substrate, a base, emitter and collector, and wherein at least two of said layers are continuous across said portions and comprises said emitter and base of said transistor portion.
Claim 8
Dependent Claim
74 words
In an integrated semiconductor light emission system, comprising: (a) a semiconductor laser portion, and (b) a bi-polar transistor portion, said semiconductor laser portion including a current block layer, a first conductive clad layer, a conductive active layer, a second conductive clad layer on a conductive substrate, a base, emitter and collector, and wherein at least two of said layers are continuous across said portions and comprises said emitter and collector of said transistor portion.
Claim 9
Dependent Claim
74 words
In an integrated semiconductor light emission system, comprising: (a) a semiconductor laser portion, and (b) a bi-polar transistor portion, said semiconductor laser portion including a current block layer, a first conductive clad layer, a conductive active layer, a second conductive clad layer on a conductive substrate, a base, emitter and collector, and wherein at least two of said layers are continuous across said portions and comprises said emitter and collector of said transistor portion.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-11-25 | 1995-05-27 | 1995-11-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-11-25 | 1999-05-27 | 1999-11-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-11-25 | 2003-05-27 | 2003-11-26 | $7700.00 | Window Closed / Lapsed |