US5066607A
Expired / Lapsed
US
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Method of making a trench DRAM cell with dynamic gain
Assignee: Texas Instruments Inc
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Filing: 1990-08-16
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Granted: 1991-11-19
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Expires: 2010-08-16
Abstract
Abstract A two transistor gain-type DRAM cell (8) is formed in a trench (30) to optimize wafer area requirements. Formed on a heavily doped semiconductor substrate (20) are alternate layers of P-type and N-type semiconductor material defining the elements of a vertical pass transistor (12) and gain transistor (24). A trench is formed through the alternate semiconductor layers into the substrate (20), and filled with two regions of a semiconductor material defining a storage node (18) and, insulated therefrom, a word line (16). The gain transistor (24) is fabricated having a response time faster than that of the pass transistor (12) so that, during read operations, the gain transistor (24) changes the precharged voltage of the read bit line (26), depending upon the charge stored in the capacitor storage node (18).
Inventors
- 👤 Sanjay K. Banerjee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 08:56
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/403; G11C11/404; H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/05; H10B12/30; H10B12/39; H10B12/395
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
135 words
A method for forming a semiconductor DRAM cell, comprising the steps of: forming a trench capacitor in a semiconductor substrate; connecting a write bit line through a vertical pass transistor to said capacitor; connecting a vertical gain transistor between a supply voltage and a read bit line; connecting said gain transistor to said capacitor so that the conduction of said gain transistor is controlled by the voltage across said storage capacitor; fabricating said gain transistor and said pass transistor so that said gain transistor is characterized by a faster conduction response time than said pass transistor; and connecting a word line to said cell for controlling said pass transistor when writing said cell and for boosting the voltage across said capacitor when said cell is read to thereby control the conduction of said gain transistor.
Claim 2
Independent Claim
135 words
A method for forming a semiconductor DRAM cell, comprising the steps of: forming a trench capacitor in a semiconductor substrate; connecting a write bit line through a vertical pass transistor to said capacitor; connecting a vertical gain transistor between a supply voltage and a read bit line; connecting said gain transistor to said capacitor so that the conduction of said gain transistor is controlled by the voltage across said storage capacitor; fabricating said gain transistor and said pass transistor so that said gain transistor is characterized by a faster conduction response time than said pass transistor; and connecting a word line to said cell for controlling said pass transistor when writing said cell and for boosting the voltage across said capacitor when said cell is read to thereby control the conduction of said gain transistor.
Claim 3
Dependent Claim
22 words
The method of claim 1, further including forming said gain transistor having a threshold voltage high than that of said pass transistor.
Claim 4
Dependent Claim
41 words
The method of claim 1, further including forming said gain transistor and said pass transistor as respective MOS-type transistors, and forming a conduction channel of said gain transistor having a shorter length than a respective conduction channel of said pass transistor.
Claim 5
Dependent Claim
68 words
The method of claim 1, further including connecting said gain transistor and said pass transistor to said capacitor in such a manner such that each said transistor is controllable by said word line, and further including fabricating each said transistor so that in response to signals on said word line, said gain transistor is capable of conducting at a faster rate than the conduction of said pass transistor.
Claim 6
Dependent Claim
25 words
The method of claim 1, further including fabricating said gain transistor and said pass transistor with single crystal semiconductor material to provide high quality devices.
Claim 7
Independent Claim
167 words
A method for fabricating a semiconductor DRAM cell, comprising the steps of: forming on a heavily doped semiconductor substrate substantially alternate layers of N-type and P-type semiconductor layers, said layers defining semiconductor regions of a vertical gain transistor and a vertical pass transistor; forming a trench in said semiconductor layers into said substrate; forming on sidewalls of said trench an insulator defining a capacitor dielectric; filling the trench with a semiconductor material defining a storage node, and forming said storage node lateral to said gain transistor so that said storage node and said capacitor dielectric define elements of said gain transistor; forming an electrical path between said storage node and said pass transistor; filling said trench with a semiconductor material defining said word line, said word line semiconductor material and a trench sidewall insulation defining elements of said pass transistor; and insulating said semiconductor word line material from said semiconductor storage node material to form a capacitance in series with a cell capacitance of said storage node.
Claim 8
Independent Claim
167 words
A method for fabricating a semiconductor DRAM cell, comprising the steps of: forming on a heavily doped semiconductor substrate substantially alternate layers of N-type and P-type semiconductor layers, said layers defining semiconductor regions of a vertical gain transistor and a vertical pass transistor; forming a trench in said semiconductor layers into said substrate; forming on sidewalls of said trench an insulator defining a capacitor dielectric; filling the trench with a semiconductor material defining a storage node, and forming said storage node lateral to said gain transistor so that said storage node and said capacitor dielectric define elements of said gain transistor; forming an electrical path between said storage node and said pass transistor; filling said trench with a semiconductor material defining said word line, said word line semiconductor material and a trench sidewall insulation defining elements of said pass transistor; and insulating said semiconductor word line material from said semiconductor storage node material to form a capacitance in series with a cell capacitance of said storage node.
Claim 9
Dependent Claim
42 words
The method of claim 6, further including forming said pass transistor and said gain transistor with respective semiconductor source regions defining a respective write bit line and a read bit line, and connecting said write bit line and said read line together.
Claim 10
Dependent Claim
24 words
The method of claim 6, further including forming said gain transistor with a threshold voltage higher than a threshold voltage of said pass transistor.
Claim 11
Dependent Claim
23 words
The method of claim 6, further including forming said gain transistor with a conduction response time faster than that of said pass transistor.
Claim 12
Dependent Claim
24 words
The method of claim 6, further including forming said gain transistor with a conduction channel shorter than a conduction channel of said pass transistor.
Claim 13
Dependent Claim
25 words
The method of claim 6, further including connecting a supply voltage to said semiconductor substrate, thereby defining a supply voltage connected to said gain transistor.
Claim 14
Dependent Claim
22 words
The method of claim 6, further including precharging said read bit line to a voltage about half that of said supply voltage.
Claim 15
Dependent Claim
20 words
The method of claim 6, further including fabricating said gain transistor and said pass transistor of single crystal semiconductor material.
References Cited (Backward Citations)
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