Semiconductor laser arrays using leaky wave interarray coupling

Claim 2

A semiconductor laser array structure, comprising: means for producing lasing action in the structure, including a substrate, an active semiconductor layer and adjacent cladding layers successively formed on the substrate, at least two electrodes formed on opposite faces of the substrate, for applying a voltage across the active layer, and a pair of reflective facets, at least one of which is an emitting facet, formed at opposite ends of the array structure; a plurality of negative-index waveguides with parallel longitudinal axes, the waveguides being arranged in a smaller number of array cells, which operate in or near a 0°-phase-shift-array-mode resonance condition in which there is strong coupling between all waveguides in each array cell and a high degree of array cell coherence; and a plurality of interarray regions, each of which is wider than interelement spacings between the waveguides in each array cell, and separates adjacent array cells, wherein each interarray region has a lateral width chosen to produce a 0°-phase-shift-array-mode resonance condition in the entire device, in which there is strong coupling between the array cells, a high degree of device coherence among all of the array cells, and a virtually uniform near-field intensity profile; and wherein the structure further includes in the interarray regions means for introducing losses, which inhibit operation in array modes other than the 0°-phase-shift mode, whereby high optical powers are achieved without adversely affecting array mode discrimination.

Claim 3

A semiconductor laser array structure as defined in claim 1, wherein: the waveguides have an interelement spacing approximately equal to an odd number of half-wavelengths of laterally traveling waves potentially generated in element regions of the array cells, whereby each array cell operates in or near the resonant condition; and the interarray regions have a lateral width approximately equal to an odd number of half-wavelengths of laterally traveling waves potentially generated in the element regions of the array cells, whereby the entire plurality of array cells operates in or near the resonant condition.

Claim 4

A semiconductor laser array structure as defined in claim 2, wherein: the interarray regions are approximately 10 to 60 micrometers in lateral width.

Claim 5

A semiconductor laser array structure as defined in claim 1, and further comprising: reflective means located at the ends of the interarray regions, to reflect light that would otherwise leak longitudinally from the structure, back into the interarray regions.

Claim 6

A semiconductor laser array structure as defined in claim 2, and further comprising: reflective means located at the ends of the interarray regions, to reflect light that would otherwise leak longitudinally from the structure, back into the interarray regions.

Claim 7

A semiconductor laser array structure as defined in claim 3, and further comprising: reflective means located at the ends of the interarray regions, to reflect light that would otherwise leak longitudinally from the structure, back into the interarray regions.

Claim 8

A semiconductor laser array structure capable of achieving high optical powers in a 0°-phase-shift array mode of operation, the structure comprising: means for producing lasing action in the structure, including a substrate, an active semiconductor layer and surrounding cladding layers successively formed on the substrate, at least two electrodes formed on opposite faces of the substrate, for applying a voltage across the active layer, and a pair of reflective facets, at least one of which is an emitting facet, formed at opposite ends of the array structure; a plurality of negative-index waveguide array cells, each having a plurality of negative-index waveguides with parallel longitudinal axes, and each array cell having interelement waveguide spacings selected to provide operation of each array cell at or near a 0°-phase-shift-array-mode resonance condition in which there is strong coupling between all waveguides in each array cell, a high degree of coherence in each array cell, and a virtually uniform near-field intensity profile; a plurality of interarray regions, each of which separates adjacent array cells by a distance wider than the interelement spacings between the waveguides in each array cell, and wherein each interarray region has a lateral width chosen to produce a 0°-phase-shift-array-mode resonance condition in the entire device, in which there is strong coupling between the array cells, a high degree of device coherence among all of the array cells, and a virtually uniform near-field intensity profile within each array cell; means for introducing losses in the interarray regions, to inhibit operation in array modes other than the 0°-phase-shift mode, whereby high optical powers are achieved without adversely affecting array mode discrimination; and reflective means located at the ends of the interarray regions, to reflect light that would otherwise leak longitudinally from the structure, back into the interarray regions.

Claim 9

A semiconductor laser array structure capable of achieving high optical powers in a 0°-phase-shift array mode of operation, the structure comprising: means for producing lasing action in the structure, including a substrate, an active semiconductor layer and surrounding cladding layers successively formed on the substrate, at least two electrodes formed on opposite faces of the substrate, for applying a voltage across the active layer, and a pair of reflective facets, at least one of which is an emitting facet, formed at opposite ends of the array structure; a plurality of negative-index waveguide array cells, each having a plurality of negative-index waveguides with parallel longitudinal axes, and each array cell having interelement waveguide spacings selected to provide operation of each array cell at or near a 0°-phase-shift-array-mode resonance condition in which there is strong coupling between all waveguides in each array cell, a high degree of coherence in each array cell, and a virtually uniform near-field intensity profile; a plurality of interarray regions, each of which separates adjacent array cells by a distance wider than the interelement spacings between the waveguides in each array cell, and wherein each interarray region has a lateral width chosen to produce a 0°-phase-shift-array-mode resonance condition in the entire device, in which there is strong coupling between the array cells, a high degree of device coherence among all of the array cells, and a virtually uniform near-field intensity profile within each array cell; means for introducing losses in the interarray regions, to inhibit operation in array modes other than the 0°-phase-shift mode, whereby high optical powers are achieved without adversely affecting array mode discrimination; and reflective means located at the ends of the interarray regions, to reflect light that would otherwise leak longitudinally from the structure, back into the interarray regions.

Claim 10

A semiconductor laser array structure capable of achieving high optical powers in a 0°-phase-shift array mode of operation, the structure comprising: a plurality of arrays of negative-index waveguides, each array having a plurality of negative-index waveguides configured to produce light in a longitudinal direction from the array and to operate in a 0°-phase-shift-array-mode resonance condition in which there is strong coupling, a high level of coherence among all of the waveguides in the array and a virtually uniform near-field intensity profile; wherein adjacent ones of the arrays are separated by interarray regions having a width greater than the interelement regions in each array, and selected to provide operation at or near a 0°-phase-shift-array-mode resonance condition in which there is strong coupling, a high level of coherence among all of the arrays of the structure and a virtually uniform nearfield intensity profile within each array cell; and wherein the interarray regions include means for introducing losses in these regions, to discriminate against operation in other than the 0°-phase-shift array mode.

Claim 11

A semiconductor laser array structure capable of achieving high optical powers in a 0°-phase-shift array mode of operation, the structure comprising: a plurality of arrays of negative-index waveguides, each array having a plurality of negative-index waveguides configured to produce light in a longitudinal direction from the array and to operate in a 0°-phase-shift-array-mode resonance condition in which there is strong coupling, a high level of coherence among all of the waveguides in the array and a virtually uniform near-field intensity profile; wherein adjacent ones of the arrays are separated by interarray regions having a width greater than the interelement regions in each array, and selected to provide operation at or near a 0°-phase-shift-array-mode resonance condition in which there is strong coupling, a high level of coherence among all of the arrays of the structure and a virtually uniform nearfield intensity profile within each array cell; and wherein the interarray regions include means for introducing losses in these regions, to discriminate against operation in other than the 0°-phase-shift array mode.