US5060236A
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Semiconductor light emission system
Assignee: Mitsubishi Electric Corp
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Filing: 1987-09-16
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Granted: 1991-10-22
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Expires: 2007-09-16
Abstract
Abstract A semiconductor light emission system, comprising a semiconductor laser part constituted of a second conductive current restricting layer with a striped groove perforated therein, a first conductive clad layer, a first or second conductive active layer, a second conductive clad layer on a first conductive substrate, and a second conductive--first conductive-second conductive bipolar transistor part constituted of said second conductive current restricting layer, first conductive clade layer, first or second conductive active layer, second conductive active layer in a position other than the semiconductor laser part.
Inventors
- 👤 Tetsuya Yagi
- 👤 Misao Kironaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 19:32
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/06; H01S5/062; H01S5/06203; H10; H10H; H10H29/00; H10H29/10; H01S5/0014; H01S5/0035; H01S5/06209; H01S5/06213; H01S5/20; H01S5/22; H01S5/223; H01S5/2232
Claims Analysis
Total Claims: 27
Claim 1
Independent Claim
97 words
A semiconductor light emission system having a) a semiconductor laser part including: (i) a p-side electrode, (ii) a substrate, (iii) a buffer layer, (iv) a current block layer, (v) a lower clad layer, (vi) an active layer, (vii) an upper clad layer, (viii) a contact layer, and (ix) an n-side electrode, and b) a bipolar npn transistor part constituted in a position other than said semi-conductor laser part and including: (i) an emitter formed from said contact layer, (ii) a base formed from said lower clad layer, and (iii) a collector formed from said current block layer.
Claim 2
Dependent Claim
97 words
A semiconductor light emission system having a) a semiconductor laser part including: (i) a p-side electrode, (ii) a substrate, (iii) a buffer layer, (iv) a current block layer, (v) a lower clad layer, (vi) an active layer, (vii) an upper clad layer, (viii) a contact layer, and (ix) an n-side electrode, and b) a bipolar npn transistor part constituted in a position other than said semi-conductor laser part and including: (i) an emitter formed from said contact layer, (ii) a base formed from said lower clad layer, and (iii) a collector formed from said current block layer.
Claim 3
Dependent Claim
43 words
The device defined in claim 1, wherein said bi-polar npn transistor part includes: a) said active layer, b) said upper clad layer, c) said contact layer, d) said n-side electrode, e) said p-side electrode, f) said block layer; and g) an n-block electrode.
Claim 4
Dependent Claim
29 words
The device defined in claim 1 and including: a) a base electrode connected to said lower clad layer, and b) a collector electrode connected to said current block layer.
Claim 5
Dependent Claim
21 words
The device defined in claim 3 wherein the radiant power is controlled by a small current injected from said base electrode.
Claim 6
Dependent Claim
18 words
The semi-conductor light emission system as defined in claim 1, the semi-conductor being constituted of a AlGaAs material.
Claim 7
Dependent Claim
18 words
The semi-conductor light emission system as defined in claim 1, the semi-conductor being constituted of a InGaAs material.
Claim 8
Dependent Claim
98 words
A semi-conductor light emission system having: a) a semi-conductor laser part including: (i) a p-side electrode, (ii) a substrate, (iii) a buffer layer (iv) a current block layer, (v) a lower clad layer, (vi) an active layer, (vii) an upper clad layer, (viii) a contact layer, (ix) a n-side electrode, and b) a bi-polar transistor part, constituted in a position other than the semi-conductor laser part, and having: (i) a collector formed from said lower clad layer, (ii) a base formed from said current block layer; and (iii) an emitter formed from said substrate and said buffer layer.
Claim 9
Dependent Claim
98 words
A semi-conductor light emission system having: a) a semi-conductor laser part including: (i) a p-side electrode, (ii) a substrate, (iii) a buffer layer (iv) a current block layer, (v) a lower clad layer, (vi) an active layer, (vii) an upper clad layer, (viii) a contact layer, (ix) a n-side electrode, and b) a bi-polar transistor part, constituted in a position other than the semi-conductor laser part, and having: (i) a collector formed from said lower clad layer, (ii) a base formed from said current block layer; and (iii) an emitter formed from said substrate and said buffer layer.
Claim 10
Dependent Claim
30 words
The device defined in claim 7 wherein said pnp transistor part includes: a) said lower clad layer b) said current block layer c) said buffer layer and d) said substrate.
Claim 11
Dependent Claim
28 words
The device defined in claim 7, and including: a) a collector electrode connected to said lower clad layer; and b) a base electrode connected to said block layer.
Claim 12
Dependent Claim
21 words
The device defined in claim 7, wherein the radiant power is controlled by a small current injected from said base electrode.
Claim 13
Dependent Claim
18 words
The semi-conductor light emission system as defined in claim 7, the semi-conductor being constituted of a AlGaAs material.
Claim 14
Dependent Claim
18 words
The semi-conductor light emission system as described in claim 7, the semi-conductor being constituted of a InGaAs material.
Claim 15
Dependent Claim
103 words
A semi-conductor light emission system having: a) a semi-conductor laser part including: (i) a p-side electrode, (ii) a substrate (iii) a lower clad layer, (iv) an active layer, (v) a first upper clad layer, (vi) a current block layer, (vii) a second upper clad layer, (viii) a contact layer, (ix) a n-side electrode, and b) a pnp bi-polar transistor part constituted in a position other than said semi-conductor laser part and including: (i) a base formed from said upper clad layer, (ii) a collector formed from said current block layer, and (iii) an emitter formed from said substrate and said lower clad layer.
Claim 16
Dependent Claim
103 words
A semi-conductor light emission system having: a) a semi-conductor laser part including: (i) a p-side electrode, (ii) a substrate (iii) a lower clad layer, (iv) an active layer, (v) a first upper clad layer, (vi) a current block layer, (vii) a second upper clad layer, (viii) a contact layer, (ix) a n-side electrode, and b) a pnp bi-polar transistor part constituted in a position other than said semi-conductor laser part and including: (i) a base formed from said upper clad layer, (ii) a collector formed from said current block layer, and (iii) an emitter formed from said substrate and said lower clad layer.
Claim 17
Dependent Claim
28 words
The device defined in claim 13, and including: a) a base electrode connected to said upper clad layer, and b) a collector electrode connected to said block layer,
Claim 18
Dependent Claim
21 words
The device defined in claim 14, wherein the radiant power is controlled by a small current injected from said base electrode.
Claim 19
Dependent Claim
33 words
The device defined in claim 13, wherein said pnp bi-polar transistor part includes: a) said lower clad layer, b) said active layer, c) said first upper clad layer, and d) said block layer.
Claim 20
Dependent Claim
18 words
The semi-conductor light emission system as defined in claim 13, the semi-conductor being constituted of a AlGaAs material.
Claim 21
Dependent Claim
18 words
The semi-conductor light emission system as defined in claim 13, the semi-conductor being constituted of an InGaAs material.
Claim 22
Dependent Claim
99 words
A semi-conductor light emission system having: a) a semi-conductor laser part including: (i) a p-side electrode, (ii) a substrate, (iii) a lower clad layer, (iv) an active layer, (v) a first upper clad layer, (vi) a current block layer, (vii) a second upper clad layer, (viii) a contact layer, (ix) an n-side electrode; and b) an npn bi-polar transistor part constituted in a position other than said semi-conductor laser part and including: (i) a base formed from said current block layer, (ii) a collector formed from said first upper clad layer, (iii) an emitter formed from said contact layer.
Claim 23
Dependent Claim
99 words
A semi-conductor light emission system having: a) a semi-conductor laser part including: (i) a p-side electrode, (ii) a substrate, (iii) a lower clad layer, (iv) an active layer, (v) a first upper clad layer, (vi) a current block layer, (vii) a second upper clad layer, (viii) a contact layer, (ix) an n-side electrode; and b) an npn bi-polar transistor part constituted in a position other than said semi-conductor laser part and including: (i) a base formed from said current block layer, (ii) a collector formed from said first upper clad layer, (iii) an emitter formed from said contact layer.
Claim 24
Dependent Claim
31 words
The device defined in claim 19, and further including: a) a base electrode connected to said current block layer, and b) a collector electrode connected to said first upper clad layer.
Claim 25
Dependent Claim
35 words
The device defined in claim 19, wherein said npn bi-polar transistor part includes: a) said first upper clad layer, b) said current block layer, c) said second upper clad layer, and d) said contact layer.
Claim 26
Dependent Claim
17 words
The semi-conductor light emission system defined in claim 19, the semi-conductor being constituted of an AlGaAs material.
Claim 27
Dependent Claim
18 words
The semi-conductor light emission system as defined in claim 19, the semi-conductor being constituted of an InGaAs material.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-10-21 | 1995-04-22 | 1995-10-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-10-21 | 1999-04-22 | 1999-10-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-10-21 | 2003-04-22 | 2003-10-22 | $7700.00 | Window Closed / Lapsed |