US5057893A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Static RAM cell with soft error immunity
Assignee: NXP USA Inc
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Filing: 1990-09-28
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Granted: 1991-10-15
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Expires: 2010-09-28
Abstract
Abstract An integrated circuit device structure for a static random access memory includes a feature which improves soft error immunity. Each static random access memory has two storage nodes for storing data of that cell. Each of these nodes is at the connection of the drain of a pull-down transistor and the source-drain of a pass transistor which occurs in a doped region of the substrate in which the integrated circuit is formed. The soft error immunity is increased by increasing the capacitance of each of the storage nodes. This is achieved by providing only a thin insulating layer over the doped regions of the storage nodes and extending a portion of grounded, heavily-doped polysilicon over the doped regions. The ground polysilicon is then separated from the doped regions by only the thin insulating layer so there is thus substantial added capacitance to the storage nodes.
Inventors
- 👤 David Sheng
- 👤 Yasunobu Kosa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 20:34
CPC Classifications
H; H10; H10B; H10B10/00; H10B10/15; Y; Y10; Y10S; Y10S257/00; Y10S257/90; Y10S257/903
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
201 words
An integrated circuit having a semiconductor device structure formed in a substrate for use in a static random access memory cell in which a storage node of the static random access memory cell is formed in a first doped region in the substrate, comprising: a first transistor having a source formed in a second doped region in the substrate, a drain formed in a third doped region in the substrate and connected to the first doped region, a gate formed over the substrate and between the second and third doped regions; a second transistor having a first source/drain region formed in a fourth doped region, a second source/drain region formed in a fifth doped region connected to the first doped region, and a gate formed over the substrate and between the fourth and fifth doped regions; a thin insulating layer over at least a first portion of the first doped region, wherein the thin insulating layer is of a thicknes less than 500 Angstroms; and a first layer of conductive material connected to the source of the first transistor and overlying at least the portion of the thin insulating layer which is over the first portion of the first doped region.
Claim 2
Dependent Claim
201 words
An integrated circuit having a semiconductor device structure formed in a substrate for use in a static random access memory cell in which a storage node of the static random access memory cell is formed in a first doped region in the substrate, comprising: a first transistor having a source formed in a second doped region in the substrate, a drain formed in a third doped region in the substrate and connected to the first doped region, a gate formed over the substrate and between the second and third doped regions; a second transistor having a first source/drain region formed in a fourth doped region, a second source/drain region formed in a fifth doped region connected to the first doped region, and a gate formed over the substrate and between the fourth and fifth doped regions; a thin insulating layer over at least a first portion of the first doped region, wherein the thin insulating layer is of a thicknes less than 500 Angstroms; and a first layer of conductive material connected to the source of the first transistor and overlying at least the portion of the thin insulating layer which is over the first portion of the first doped region.
Claim 3
Dependent Claim
148 words
An integrated circuit having a semiconductor device structure formed in a substrate for use in a static random access memory cell in which a storage node of the static random access memory cell is formed in a first doped region in the substrate, comprising: a first transistor having a source formed in a second doped region in the substrate, a drain formed in a third doped region in the substrate and connected to the first doped region, and a gate formed over the substrate and between the second and third doped regions; a thin insulating layer over at least a first portion of the first doped region, wherein the thin insulating layer is of a thickness less than 500 Angstroms; and a first layer of conductive material overlying at least the portion of the thin insulating layer which is over the first portion of the first doped region.
Claim 4
Dependent Claim
148 words
An integrated circuit having a semiconductor device structure formed in a substrate for use in a static random access memory cell in which a storage node of the static random access memory cell is formed in a first doped region in the substrate, comprising: a first transistor having a source formed in a second doped region in the substrate, a drain formed in a third doped region in the substrate and connected to the first doped region, and a gate formed over the substrate and between the second and third doped regions; a thin insulating layer over at least a first portion of the first doped region, wherein the thin insulating layer is of a thickness less than 500 Angstroms; and a first layer of conductive material overlying at least the portion of the thin insulating layer which is over the first portion of the first doped region.
Claim 5
Dependent Claim
241 words
An integrated circuit having a semiconductor device structure formed in a substrate for use in a static random access memory cell in which a storage node of the static random access memory cell is formed in a first doped region in the substrate, comprising: a first transistor having a source formed in a second doped region in the substrate, a drain formed in a third doped region in the substrate and connected to the first doped region, a first polysilicon gate formed over the substrate and between the second and third doped regions, and a first sidewall spacer adjoining the first polysilicon gate and over the second and third doped regions; a second transistor having a first source/drain region formed in a fourth doped region, a second source/drain region formed in a fifth doped region electrically connected to the first doped region, and a second polysilicon gate formed over the substrate and between the fourth and fifth doped regions, and a second sidewall spacer adjoining the second polysilicon gate and over the fourth and fifth doped regions; a thin insulating layer over at least a first portion of the first doped region, wherein the thin insulating layer is of a thickness less than 500 Angstroms; and a first polysilicon layer electrically connected to the source of the first transistor and overlying at least the portion of the thin insulating layer which is over the first portion of the first doped region.
Claim 6
Dependent Claim
241 words
An integrated circuit having a semiconductor device structure formed in a substrate for use in a static random access memory cell in which a storage node of the static random access memory cell is formed in a first doped region in the substrate, comprising: a first transistor having a source formed in a second doped region in the substrate, a drain formed in a third doped region in the substrate and connected to the first doped region, a first polysilicon gate formed over the substrate and between the second and third doped regions, and a first sidewall spacer adjoining the first polysilicon gate and over the second and third doped regions; a second transistor having a first source/drain region formed in a fourth doped region, a second source/drain region formed in a fifth doped region electrically connected to the first doped region, and a second polysilicon gate formed over the substrate and between the fourth and fifth doped regions, and a second sidewall spacer adjoining the second polysilicon gate and over the fourth and fifth doped regions; a thin insulating layer over at least a first portion of the first doped region, wherein the thin insulating layer is of a thickness less than 500 Angstroms; and a first polysilicon layer electrically connected to the source of the first transistor and overlying at least the portion of the thin insulating layer which is over the first portion of the first doped region.
References Cited (Backward Citations)
US4849801A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-10-14 | 1995-04-15 | 1995-10-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-10-14 | 1999-04-15 | 1999-10-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-10-14 | 2003-04-15 | 2003-10-15 | $7700.00 | Window Closed / Lapsed |