Single crystal oxide superconductor and method of producing the same

Claim 2

A single crystal oxide superconductor comprising: a substrate made of a substance selected from the group consisting of: a polycrystalline metal of Pt, Cu, Ag, and Au; an alloy of Pt, Cu, Ag, and Au; a silica glass; an optical glass fiber; Al 2 O 3 ; SiC; Si 3 N 4 ; ZrO 2 ; and Y 2 O 3 ; and a single crystal oxide superconductor layer coated over the substrate, the single crystal oxide superconductor layer being represented by the formula: A.sub.x B.sub.y Cu.sub.z O.sub.9-δ where: A includes at least one element selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; B includes at least one element selected from the group consisting of Be, Sr, Mg, Ca, Ba and Ra; about 0.1<x<about 2.0; about 1<y<about 3; about 1<z<about 3; and about 0<δ<about 7.

Claim 3

A single crystal oxide superconductor as recited in claim 6, wherein the substrate is in the form of a plate and the oxide superconductor layer is coated over one face of the substrate plate.

Claim 4

A single crystal oxide superconductor as recited in claim 2, wherein the substrate is a fiber.

Claim 5

A single crystal oxide superconductor comprising a substrate made of a substance selected from a group consisting of: a single crystalline semiconductor of Si, GaAs and SnP; SiO 2 ; Al 2 O 3 and LiNbO 3 ; a single crystal oxide superconductor layer coated over the substrate, the single crystal oxide superconductor layer having a high critical temperature; and a single crystalline super lattice layer including compositions of both the substrate and the oxide superconductor, the single crystalline super lattice layer being positioned between the substrate and the oxide superconductor.

Claim 6

A single crystal oxide superconductor comprising a substrate made of a substance selected from a group consisting of: a single crystalline semiconductor of Si, GaAs and SnP; SiO 2 ; Al 2 O 3 and LiNbO 3 ; a single crystal oxide superconductor layer coated over the substrate, the single crystal oxide superconductor layer having a high critical temperature; and a single crystalline super lattice layer including compositions of both the substrate and the oxide superconductor, the single crystalline super lattice layer being positioned between the substrate and the oxide superconductor.

Claim 7

A single crystal oxide superconductor comprising a substrate made of a substance selected from a group consisting of: a single crystalline semiconductor of Si, GaAs and InP; SiO 2 ; Al 2 O 3 and LiNbO 3 ; a single crystal oxide superconductor layer coated over the substrate, the single crystal oxide superconductor having a high critical temperature; and a single crystalline super lattice layer including compositions of both the substance and the oxide superconductor, the single crystalline super lattice layer being positioned between the substrate and the oxide superconductor, wherein the super lattice layer is provided in plural in a stacked manner, including an uppermost super lattice layer adhered to the superconductor layer and a lowermost super lattice layer adhered to the substrate, and wherein the uppermost lattice layer includes the composition of the superconductor more than the lowermost super lattice layer while including the composition of the substrate less than the lowermost super lattice layer.

Claim 8

A single crystal oxide superconductor comprising a substrate made of a substance selected from a group consisting of: a single crystalline semiconductor of Si, GaAs and InP; SiO 2 ; Al 2 O 3 and LiNbO 3 ; a single crystal oxide superconductor layer coated over the substrate, the single crystal oxide superconductor having a high critical temperature; and a single crystalline super lattice layer including compositions of both the substance and the oxide superconductor, the single crystalline super lattice layer being positioned between the substrate and the oxide superconductor, wherein the super lattice layer is provided in plural in a stacked manner, including an uppermost super lattice layer adhered to the superconductor layer and a lowermost super lattice layer adhered to the substrate, and wherein the uppermost lattice layer includes the composition of the superconductor more than the lowermost super lattice layer while including the composition of the substrate less than the lowermost super lattice layer.

Claim 9

A single crystal oxide superconductor comprising: a substrate made of a substance selected from the group consisting of: a polycrystalline metal of Pt, Cu, Ag, and Au; an allow of Pt, Cu, Ag, and Au; a silica glass; an optical glass fiber; Al 2 O 3 ; SiC; Si 3 N 4 ; ZrO 2 ; and Y 2 O 3 ; a single crystal oxide superconductor layer coated over the substrate, the single crystal oxide superconductor layer being represented by the formula: A.sub.x B.sub.y Cu.sub.z O.sub.9-δ where: A includes at least one element selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu; B includes at least one element selected from the group consisting of Be, Sr, Mg, Ca, ba, and Ra; about 0.1<x<about 2.0; about 1<y<about 3; about 1<z<about 3; and about 0<δ<about 7; and a single crystalline intermediate layer, interposed between and adhered to the substrate and the single crystal oxide superconductor, the intermediate layer being made of a substance having an intermediate value in each of thermal expansion coefficient and lattice constant between values of the substrate and the superconductor layer, wherein the intermediate layer is made of a substance selected from the group consisting of Cu 2 O, ZnO, Al 2 O 3 , BaO, MgF 2 , CaF 2 , and BaF 2 .

Claim 10

A single crystal oxide superconductor comprising: a substrate made of a substance selected from the group consisting of: a polycrystalline metal of Pt, Cu, Ag, and Au; an allow of Pt, Cu, Ag, and Au; a silica glass; an optical glass fiber; Al 2 O 3 ; SiC; Si 3 N 4 ; ZrO 2 ; and Y 2 O 3 ; a single crystal oxide superconductor layer coated over the substrate, the single crystal oxide superconductor layer being represented by the formula: A.sub.x B.sub.y Cu.sub.z O.sub.9-δ where: A includes at least one element selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu; B includes at least one element selected from the group consisting of Be, Sr, Mg, Ca, ba, and Ra; about 0.1<x<about 2.0; about 1<y<about 3; about 1<z<about 3; and about 0<δ<about 7; and a single crystalline intermediate layer, interposed between and adhered to the substrate and the single crystal oxide superconductor, the intermediate layer being made of a substance having an intermediate value in each of thermal expansion coefficient and lattice constant between values of the substrate and the superconductor layer, wherein the intermediate layer is made of a substance selected from the group consisting of Cu 2 O, ZnO, Al 2 O 3 , BaO, MgF 2 , CaF 2 , and BaF 2 .

Claim 11

A single crystalline oxide superconductor formed by a method comprising the steps of: (a) coating one face of a substrate with an oxide superconductor for forming an oxide superconductor layer, wherein the substrate is made of a substance selected from the group consisting of: a polycrystalline metal of Pt, Cu, Ag, and Au; an alloy of Pt, Cu, Ag, and Au; a silica glass; an optical glass fiber; Al 2 O 3 ; SiC; Si 3 N 4 ; ZrO x ; and Y 2 O 3 , and the single crystal oxide superconductor is represented by the formula: A.sub.x B.sub.y Cu.sub.z O.sub.9-δ where: A includes at least one element selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu; B includes at least one element selected from the group consisting of Be, Sr, Mg, Ca, Ba, and Ra; about 0.1<x<about 2.0; about 1<y<about 3; about 1<z<about 3; and about 0<δ<about 7; then (b) heating the oxide superconductor layer so that the oxide superconductor has a single crystalline structure.

Claim 12

A single crystalline oxide superconductor formed by a method comprising the steps of: (a) coating one face of a substrate with an oxide superconductor for forming an oxide superconductor layer, wherein the substrate is made of a substance selected from the group consisting of: a polycrystalline metal of Pt, Cu, Ag, and Au; an alloy of Pt, Cu, Ag, and Au; a silica glass; an optical glass fiber; Al 2 O 3 ; SiC; Si 3 N 4 ; ZrO x ; and Y 2 O 3 , and the single crystal oxide superconductor is represented by the formula: A.sub.x B.sub.y Cu.sub.z O.sub.9-δ where: A includes at least one element selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu; B includes at least one element selected from the group consisting of Be, Sr, Mg, Ca, Ba, and Ra; about 0.1<x<about 2.0; about 1<y<about 3; about 1<z<about 3; and about 0<δ<about 7; then (b) heating the oxide superconductor layer so that the oxide superconductor has a single crystalline structure.

Claim 13

A single crystalline oxide superconductor recited in claim 7, formed by a method comprising the steps of: coating the one face of the substrate, prior to forming the oxide superconductor layer, with a substance for forming an intermediate layer, wherein the intermediate layer is made of a substance selected from the group consisting of Cu 2 O, ZnO, Al 2 O 3 , BaO, MgF 2 , CaF 2 , and BaF 2 , then heating the intermediate layer for single crystallizing the intermediate layer; whereby the intermediate layer substantially matches both the superconductor layer and the substrate both in lattice constant and in thermal expansion coefficient.

Claim 14

The single crystal oxide superconductor of claim 1, further comprising: a hermetic layer covering the oxide superconductor layer.

Claim 15

A single crystal oxide superconductor comprising a substrate made of a substance selected from a group consisting of: a single crystalline semiconductor of Si, GaAs and InP; SiO 2 ; Al 2 O 3 and LiNbO 3 ; a single crystal oxide superconductor layer coated over the substrate, the single crystal oxide superconductor layer having a high critical temperature; and a single crystalline super lattice layer including compositions of both the substrate and the oxide superconductor, the single crystalline super lattice layer being positioned between the substrate and the oxide superconductor, wherein the superconductor layer is represented by the formula: A.sub.x B.sub.y Cu.sub.z O.sub.9-δ where: A includes at least one element selected from the group consisting of Sc, Y, La Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu; B includes at least one element selected from the group consisting of Be, Sr, Mg, Ca, Ba, and Ra; where about 0.1°x<about 2.0, about 1<y<about 3, about 1<z<about 3, and 0<δ<about 7.

Claim 16

A single crystal oxide superconductor comprising a substrate made of a substance selected from a group consisting of: a single crystalline semiconductor of Si, GaAs and InP; SiO 2 ; Al 2 O 3 and LiNbO 3 ; a single crystal oxide superconductor layer coated over the substrate, the single crystal oxide superconductor layer having a high critical temperature; and a single crystalline super lattice layer including compositions of both the substrate and the oxide superconductor, the single crystalline super lattice layer being positioned between the substrate and the oxide superconductor, wherein the superconductor layer is represented by the formula: A.sub.x B.sub.y Cu.sub.z O.sub.9-δ where: A includes at least one element selected from the group consisting of Sc, Y, La Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu; B includes at least one element selected from the group consisting of Be, Sr, Mg, Ca, Ba, and Ra; where about 0.1°x<about 2.0, about 1<y<about 3, about 1<z<about 3, and 0<δ<about 7.

Claim 17

A single crystalline oxide superconductor formed by a method comprising the steps of: (a) coating one face of the substrate with a substance for forming super lattice layers, the substrate being made of a substance selected from the group consisting of: a single crystalline semiconductor of Si, GaAs and InP; SiO 2 ; Al 2 O 3 and LiNbO 3 ; (b) heating the super lattice layers for single crystallizing the super lattice layer; (c) coating the super lattice layers with an oxide superconductor layer represented by the formula; A.sub.x B.sub.y Cu.sub.2 O.sub.9-δ where: A includes at least one element selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu; B includes at least one element selected from the group consisting of Be, Sr, Mg, Ca, Ba, and Ra; about 0.1<x<about 2.0; about 1<y<about 3; about 1<z<about 3; and about 0<δ<about 7; whereby the intermediate layer substantially matches both the superconductor layer and the substrate both in lattice constant and in thermal expansion coefficient; and (d) heating the oxide superconductor layer so that the oxide superconductor has a single crystalline structure; wherein step (a) further comprises forming a plurality of super lattice layers over the one face of the substrate in a stacked manner with an uppermost super lattice layer adhered to the superconducting layer and a lowermost super lattice adhered to the substrate, each super lattice layer including components of each of the superconductor layer and the substrate, and the proportion of the superconductor layer components in each super lattice layer being gradually increased from the lowermost super lattice layer towards the uppermost super lattice layer while the proportion of the components of the substrate in each super lattice layer is gradually decreased from the lowermost super lattice layer towards the uppermost super lattice layer.

Claim 18

A single crystalline oxide superconductor formed by a method comprising the steps of: (a) coating one face of the substrate with a substance for forming super lattice layers, the substrate being made of a substance selected from the group consisting of: a single crystalline semiconductor of Si, GaAs and InP; SiO 2 ; Al 2 O 3 and LiNbO 3 ; (b) heating the super lattice layers for single crystallizing the super lattice layer; (c) coating the super lattice layers with an oxide superconductor layer represented by the formula; A.sub.x B.sub.y Cu.sub.2 O.sub.9-δ where: A includes at least one element selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu; B includes at least one element selected from the group consisting of Be, Sr, Mg, Ca, Ba, and Ra; about 0.1<x<about 2.0; about 1<y<about 3; about 1<z<about 3; and about 0<δ<about 7; whereby the intermediate layer substantially matches both the superconductor layer and the substrate both in lattice constant and in thermal expansion coefficient; and (d) heating the oxide superconductor layer so that the oxide superconductor has a single crystalline structure; wherein step (a) further comprises forming a plurality of super lattice layers over the one face of the substrate in a stacked manner with an uppermost super lattice layer adhered to the superconducting layer and a lowermost super lattice adhered to the substrate, each super lattice layer including components of each of the superconductor layer and the substrate, and the proportion of the superconductor layer components in each super lattice layer being gradually increased from the lowermost super lattice layer towards the uppermost super lattice layer while the proportion of the components of the substrate in each super lattice layer is gradually decreased from the lowermost super lattice layer towards the uppermost super lattice layer.