US5055904A
Expired / Lapsed
US
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Semiconductor device
Assignee: Hitachi Ltd
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Filing: 1990-03-19
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Granted: 1991-10-08
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Expires: 2010-03-19
Abstract
Abstract A semicondcutor device and a manufacturing method thereof are disclosed in which higher integration can be achieved without increasing the total manufacturing steps. The semiconductor device includes at least two MOS transistors having the same channel types, the gate electrodes of which are constructed of polycrystal silicon layers which contain an impurity, and a bipolar transistor, the base electrode of which is constructed of a polycrystal silicon layer which contains and impurity. In particular, the respective gate electrodes of the two MOS transistors contain impurities of different conductivity types from one another.
Inventors
- 👤 Masataka Minami
- 👤 Kazushige Sato
- 👤 Atsuo Watanabe
- 👤 Shoji Shukuri
- 👤 Takashi Nishida
- 👤 Takahiro Nagano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 21:10
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/40; H10D84/401; H10B; H10B10/00; H10B10/15; H10D84/01; H10D84/0107; H10D84/0109; H10D89/00; H10D89/60; H10D89/601; H10D89/711; H10P; H10P14/00; H10P14/40; H10P14/416; H10W; H10W20/00; H10W20/01; Y; Y10; Y10S; Y10S257/00; Y10S257/903
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
112 words
A semiconductor device comprising: at least two MOS transistors having channels of the same conductivity type, the gate electrodes of which are comprised of polycrystal silicon layers containing an impurity; and a bipolar transistor, the base electrode of which is comprised of a polycrystal silicon layer containing an impurity, wherein one of said MOS transistors has a gate electrode including a first conductivity type polycrystal silicon layer, wherein said gate electrode has a side surface which is covered with an insulating film, and wherein the other of said MOS transistors has a gate electrode which includes a second conductivity type polycrystal silicon layer different from said first conductivity type polycrystal silicon layer.
Claim 2
Dependent Claim
112 words
A semiconductor device comprising: at least two MOS transistors having channels of the same conductivity type, the gate electrodes of which are comprised of polycrystal silicon layers containing an impurity; and a bipolar transistor, the base electrode of which is comprised of a polycrystal silicon layer containing an impurity, wherein one of said MOS transistors has a gate electrode including a first conductivity type polycrystal silicon layer, wherein said gate electrode has a side surface which is covered with an insulating film, and wherein the other of said MOS transistors has a gate electrode which includes a second conductivity type polycrystal silicon layer different from said first conductivity type polycrystal silicon layer.
Claim 3
Dependent Claim
26 words
A semiconductor device as claimed in claim 1, wherein a side surface of the second conductivity type polycrystal silicon layer is covered with an insulating film.
Claim 4
Dependent Claim
22 words
A semiconductor device as claimed in claim 1, wherein said bipolar transistor has an emitter electrode formed by a polycrystal silicon layer.
Claim 5
Dependent Claim
63 words
A semiconductor device as claimed in claim 3, wherein in one of the MOS transistors among the respective MOS transistors, in which the polycrystal silicon layer contains an impurity different from the channel type, the same type semiconductor layer for connecting a drain layer thereof and a source layer thereof is formed in a channel region between said drain layer and source layer.
Claim 6
Dependent Claim
52 words
A semiconductor device as claimed in claim 1, wherein said at least two MOS transistors are part of a memory cell, and wherein said one of said MOS transistors is a driver transistor for said memory cell and said other of said MOS transistors is a transfer transistor for said memory cell.
Claim 7
Dependent Claim
26 words
A semiconductor device as claimed in claim 1, wherein said gate electrodes of said at least two MOS transistors are respectively formed in separate manufacturing steps.
Claim 8
Dependent Claim
31 words
A semiconductor device as claimed in claim 5, wherein the gate electrode for said driver transistor is formed in a separate manufacturing step from the gate electrode of said transfer transistor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-10-07 | 1995-04-08 | 1995-10-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-10-07 | 1999-04-08 | 1999-10-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-10-07 | 2003-04-08 | 2003-10-08 | $7700.00 | Window Closed / Lapsed |