US5045482A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making a tandem PIN semiconductor photoelectric conversion device
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1990-06-12
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Granted: 1991-09-03
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Expires: 2010-06-12
Abstract
Abstract A method of making a tandem type semiconductor photoelectric conversion device, comprising steps of: forming laminate member on a substrate by laminating first and second PIN structure of non-single crystal semiconductor in that order (or in the reverse order); forming an electrode on the laminate member; and crystallization an I-type layer of the second PIN structure by light irradiation (a) through the electrode (in this case, the electrode is transparent), or (b) from the side opposite from the substrate before formation of the electrode (or (a) from the side opposite from the substrate before formation of the first PIN structure, or (b) through the substrate (in this case, the substrate is transparent)).
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 18:46
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/17; H10F10/172; H10F71/00; H10F71/128; H10F77/00; H10F77/20; H10F77/244; H10F77/247; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/548; Y02P; Y02P70/00; Y02P70/50; Y10; Y10S; Y10S148/00; Y10S148/004; Y10S148/154; Y10S438/00; Y10S438/931
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
151 words
A method for the manufacture of a semiconductor photoelectric conversion device, comprising the steps of: forming a laminate member on a transparent substrate having a conductive surface by laminating at least first and second PIN structures in that order, each of which has such a construction that a first conductivity type non-single-crystal semiconductor layer, an I-type non-single-crystal semiconductor layer doped with a recombination center neutralizer and a non-single-crystal semiconductor layer of a second conductivity type reverse from the first conductivity type are laminated in that order or in the reverse order; forming an electrode which is composed of transparent conductive layer formed on the laminate member and a reflecting conductive layer formed on the transparent conductive layer; and crystallizing the I-type non-single-crystal semiconductor layer of the second PIN structure by light irradiation from the side opposite from the transparent substrate before the formation of the reflecting conductive layer of the electrode.
Claim 2
Independent Claim
151 words
A method for the manufacture of a semiconductor photoelectric conversion device, comprising the steps of: forming a laminate member on a transparent substrate having a conductive surface by laminating at least first and second PIN structures in that order, each of which has such a construction that a first conductivity type non-single-crystal semiconductor layer, an I-type non-single-crystal semiconductor layer doped with a recombination center neutralizer and a non-single-crystal semiconductor layer of a second conductivity type reverse from the first conductivity type are laminated in that order or in the reverse order; forming an electrode which is composed of transparent conductive layer formed on the laminate member and a reflecting conductive layer formed on the transparent conductive layer; and crystallizing the I-type non-single-crystal semiconductor layer of the second PIN structure by light irradiation from the side opposite from the transparent substrate before the formation of the reflecting conductive layer of the electrode.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-09-02 | 1995-03-04 | 1995-09-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-09-02 | 1999-03-04 | 1999-09-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-09-02 | 2003-03-04 | 2003-09-03 | $7700.00 | Window Closed / Lapsed |