Photocoupler circuit having DC power source in series with detection and switching means

Claim 2

An enhanced switching speed photocoupler circuit, for providing an output signal in response to an isolated input signal, comprising: photocoupler means, having a phototransistor, for providing isolation of an input signal; a switching transistor, coupled to said phototransistor, for providing a signal representative of a desired output signal; and biasing means, having a source of DC power coupled to a series combination of said phototransistor and said switching transistor, for enabling said switching transistor to switch between ON and OFF states with a voltage drop across said switching transistor in its ON state which is small relative to the voltage of said DC source; whereby, the limited change in collector-emitter voltage across said phototransistor between ON and OFF states of said switching transistor, causes the phototransistor to operate in its active region, with reduced drive current and avoiding saturation, thereby reducing the phototransistor transition time from ON to OFF and enhancing overall switching speed.

Claim 3

The photocoupler circuit of claim 1 in which the switching transistor is an NPN type transistor.

Claim 4

The photocoupler circuit of claim 1 in which the switching transistor is a PNP type transistor.

Claim 5

The photocoupler circuit of claim 1 in further comprising means for providing two input signals superimposed upon each other.

Claim 6

An enhanced switching speed photocoupler circuit, for driving a power semiconductor element in response to an isolated input signal, comprising: photocoupler means, having a phototransistor, for providing isolation of an input signal; a switching transistor, coupled to said phototransistor, for providing a signal representative of a desired output signal; biasing means, having a source of DC power coupled to a series combination of said phototransistor and said switching transistor, for enabling said switching transistor to switch between ON and OFF states with a voltage drop across said switching transistor in its ON state which is small relative to the voltage of said DC source; and a power semiconductor element coupled to the collector of said switching transistor; whereby, the limited change in collector-emitter voltage across said phototransistor, between ON and OFF states of said switching transistor, causes the phototransistor to operate in its active region, with reduced drive current and avoiding saturation, thereby reducing the phototransistor transition time from ON to OFF and enhancing overall switching speed.

Claim 7

An enhanced switching speed photocoupler circuit, for driving a power semiconductor element in response to an isolated input signal, comprising: photocoupler means, having a phototransistor, for providing isolation of an input signal; a switching transistor, coupled to said phototransistor, for providing a signal representative of a desired output signal; biasing means, having a source of DC power coupled to a series combination of said phototransistor and said switching transistor, for enabling said switching transistor to switch between ON and OFF states with a voltage drop across said switching transistor in its ON state which is small relative to the voltage of said DC source; and a power semiconductor element coupled to the collector of said switching transistor; whereby, the limited change in collector-emitter voltage across said phototransistor, between ON and OFF states of said switching transistor, causes the phototransistor to operate in its active region, with reduced drive current and avoiding saturation, thereby reducing the phototransistor transition time from ON to OFF and enhancing overall switching speed.

Claim 8

The photocoupler circuit of claim 5 further comprising a forward bias transistor and a backward bias transistor connected in parallel between the collector of said switching transistor and the base of said power semiconductor element.

Claim 9

The photocoupler circuit of claim 6 further comprising an amplifying transistor connected between the collector of said switching transistor and the base leads of said backward bias transistor and said forward bias transistor.

Claim 10

The photocoupler circuit of claim 6 in which said forward bias transistor is a PNP type transistor and said backward bias transistor is an NPN type transistor.

Claim 11

The photocoupler circuit of claim 6 in which said forward bias transistor is an NPN type transistor and said backward bias transistor is a PNP type transistor.

Claim 12

The photocoupler circuit of claim 5 further comprising a resistor and a zener diode coupled to said power semiconductor element.

Claim 13

The photocoupler circuit of claim 6 further comprising a resistor and a constant voltage diode connected in series across the collectors of said forward bias transistor and said backward bias transistor.

Claim 14

The photocoupler circuit of claim 6 further comprising signal differentiating means, coupled to the input of said photocoupler, for differentiating said input signal whereby the phototransistor transition time is further reduced.

Claim 15

The photocoupler circuit of claim 6 further comprising differentiating means, coupled to the input of said photocoupler, for differentiating said input signal, said differentiating means comprising a resistor and a compactor connected in series.