US5042008A
Expired / Lapsed
US
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Non-volatile semiconductor memory device having word lines ("control gates") embedded in substrate
Assignee: NEC Corp
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Filing: 1990-04-16
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Granted: 1991-08-20
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Expires: 2010-04-16
Abstract
Abstract A non-volatile memory device is fabricated on a semiconductor substrate structure and comprises a word line formed by a buried layer in the semiconductor substrate structure and a plurality of memory cells associated with the word line, and each of the memory cells comprises a control gate region of formed in the semiconductor substrate structure and extending from the word line to a major surface portion of the semiconductor substrate structure, a first gate insulating film covering a top surface of the control gate region, a source region of formed in the major surface portion of the semiconductor substrate structure, a drain region formed in the major surface portion of the semiconductor substrate structure and spaced from the control gate region and the source region, a second gate insulating film provided over that area between the source and drain regions, and a floating gate electrode extending from the first gate insulating film to the second gate insulating film, since the word line extends below the major surface, the word line does not consume a real estate of the semiconductor substrate structure and, accordingly, enhances the integration density of the non-volatile memory device.
Inventors
- 👤 Shoichi Iwasa
- 👤 Masaru Ohki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 06:20
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/681; H10D30/683; H10B; H10B69/00
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
220 words
A non-volatile semiconductor memory device fabricated on a semiconductor substrate structure of a first conductivity type, comprising: a) a plurality of doped regions of a second conductivity type respectively serving as word lines and formed in said semiconductor substrate structure; and b) a plurality of memory cells divided into a plurality of groups respectively coupled to said plurality of doped regions and memorizing data bits in a non-volatile manner, respectively, in which each of said memory cells comprises b-1) a control gate region of said second conductivity type formed in said semiconductor substrate structure and extending from one of said doped regions to a major surface portion of the semiconductor substrate structure, b-2) a first gate insulating film covering a top surface of said control gate region, b-3) a source region of said second conductivity type formed in the major surface portion of said semiconductor substrate structure and isolated from said control gate region, b-4) a drain region of said second conductivity type formed in the major surface portion of said semiconductor substrate structure and spaced from said control gate region and said source region, b-5) a second gate insulating film provided over that area between said source and drain regions, and b-6) a floating gate electrode extending from said first gate insulating film to said second gate insulating film.
Claim 2
Dependent Claim
220 words
A non-volatile semiconductor memory device fabricated on a semiconductor substrate structure of a first conductivity type, comprising: a) a plurality of doped regions of a second conductivity type respectively serving as word lines and formed in said semiconductor substrate structure; and b) a plurality of memory cells divided into a plurality of groups respectively coupled to said plurality of doped regions and memorizing data bits in a non-volatile manner, respectively, in which each of said memory cells comprises b-1) a control gate region of said second conductivity type formed in said semiconductor substrate structure and extending from one of said doped regions to a major surface portion of the semiconductor substrate structure, b-2) a first gate insulating film covering a top surface of said control gate region, b-3) a source region of said second conductivity type formed in the major surface portion of said semiconductor substrate structure and isolated from said control gate region, b-4) a drain region of said second conductivity type formed in the major surface portion of said semiconductor substrate structure and spaced from said control gate region and said source region, b-5) a second gate insulating film provided over that area between said source and drain regions, and b-6) a floating gate electrode extending from said first gate insulating film to said second gate insulating film.
Claim 3
Dependent Claim
40 words
A non-volatile semiconductor memory device as set forth in claim 1, in which said semiconductor substrate structure comprises a semiconductor substrate of said first conductivity type and an epitaxial layer of said first conductivity type grown on the semiconductor substrate.
Claim 4
Dependent Claim
28 words
A non-volatile semiconductor memory device as set forth in claim 2, in which said doped region is formed in said semiconductor substrate and extends through said epitaxial layer.
Claim 5
Dependent Claim
31 words
A non-volatile semiconductor memory device as set forth in claim 3, in which said floating gate electrode extends over a thick insulating film between said first and second gate insulating films.
Claim 6
Dependent Claim
54 words
A non-volatile semiconductor memory device as set forth in claim 6, in which said non-volatile semiconductor memory device further comprises an inter-level insulating film covering said floating gate and formed with a contact window, and a metal wiring strip extending on the interlevel insulating film and contacting said drain region through said contact window.
Claim 7
Dependent Claim
46 words
A non-volatile semiconductor memory device as set forth in claim 1, in which said semiconductor substrate structure comprises a semiconductor substrate of said first conductivity type, an epitaxial layer of the first conductivity type and a trench type isolating oxide region formed in the epitaxial layer.
Claim 8
Dependent Claim
29 words
A non-volatile semiconductor memory device as set forth in claim 6, in which said trench type isolating oxide region is contiguous to said first and second gate insulating films.
Claim 9
Dependent Claim
54 words
A non-volatile semiconductor memory device as set forth in claim 7, in which said non-volatile semiconductor memory device further comprises an inter-level insulating film covering said floating gate and formed with a contact window, and a metal wiring strip extending on the interlevel insulating film and contacting said drain region through said contact window.
References Cited (Backward Citations)
US4542396A
Cited
US4858185A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-08-19 | 1995-02-18 | 1995-08-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-08-19 | 1999-02-18 | 1999-08-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-08-19 | 2003-02-18 | 2003-08-20 | $7700.00 | Window Closed / Lapsed |