US5040071A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Image sensor having multiple horizontal shift registers
Assignee: Eastman Kodak Co
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Filing: 1990-03-21
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Granted: 1991-08-13
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Expires: 2010-03-21
Abstract
Abstract An image sensor is disclosed which comprises an imaging region and horizontal shift registers which receive charge carriers generated in the imaging region and transfer them to an output circuit for processing. In order to facilitate the transfer of charge carriers out of the sensor and to provide an image sensor which has a simplified structure, dual horizontal transfer registers are used and transfer of charge carriers between the two registers is accomplished without a separate transfer gate electrode. Transfer regions are disposed between alternate storage regions of the registers such that charge carriers in one-half of the storage regions in one register can be transferred to storage regions in the other register. The two registers can then be clocked out in parallel to read out a single line.
Inventors
- 👤 Eric G. Stevens
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 06:13
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/153; H04; H04N; H04N25/00; H04N25/70; H04N25/71; H04N25/713
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
168 words
An image sensor comprising: an imaging region which includes a substrate of semiconductor material, said region including means in said material for accumulating charge carriers and for transferring said charge carriers from said region; at least two shift registers arranged in a side-by-side relationship adjacent said region, one of said shift registers including a series of storage regions for receiving said charge carriers from said region; means for controlling the transfer of charge carriers from said one shift register to another shift register, said controlling means including transfer regions adjacent certain of said storage regions and means adjacent the remainder of said storage regions for blocking the transfer of charge carriers from said one shift register to the other shift register, each of said transfer regions including a barrier implant therein; means for effecting the transfer of charge carriers from said one shift register to the other shift register; and means for clocking said shift registers to transfer said charge carriers from said registers to an output circuit.
Claim 2
Dependent Claim
168 words
An image sensor comprising: an imaging region which includes a substrate of semiconductor material, said region including means in said material for accumulating charge carriers and for transferring said charge carriers from said region; at least two shift registers arranged in a side-by-side relationship adjacent said region, one of said shift registers including a series of storage regions for receiving said charge carriers from said region; means for controlling the transfer of charge carriers from said one shift register to another shift register, said controlling means including transfer regions adjacent certain of said storage regions and means adjacent the remainder of said storage regions for blocking the transfer of charge carriers from said one shift register to the other shift register, each of said transfer regions including a barrier implant therein; means for effecting the transfer of charge carriers from said one shift register to the other shift register; and means for clocking said shift registers to transfer said charge carriers from said registers to an output circuit.
Claim 3
Dependent Claim
23 words
An image sensor, as defined in claim 1, wherein a transfer region is disposed adjacent every other storage region in said one register.
Claim 4
Dependent Claim
15 words
An image sensor, as defined in claim 1, wherein said registers are CCD shift registers.
Claim 5
Dependent Claim
18 words
An image sensor, as defined in claim 1, wherein said transfer regions are wider than said storage regions.
Claim 6
Dependent Claim
28 words
An image sensor, as defined in claim 1, wherein said shift registers are clocked in unison to transfer said charge carriers from said registers to said output circuit.
Claim 7
Dependent Claim
24 words
An image sensor, as defined in claim 1, wherein said means for accumulating and transferring charge carriers includes a matrix of photoelectric conversion elements.
Claim 8
Dependent Claim
30 words
An image sensor, as defined in claim 6, wherein said means for accumulating and transferring charge carriers includes columns of CCD shift registers which receive charge carriers from said elements.
Claim 9
Dependent Claim
26 words
An image sensor, as defined in claim 1, wherein said barrier implant is formed in a n-type buried channel, and said implant is a p-type material.
Claim 10
Dependent Claim
19 words
An image sensor, as defined in claim 1, wherein said effecting means includes an electrode in said other register.
Claim 11
Dependent Claim
20 words
An image sensor, as defined in claim 1, wherein an electrode in said other register extends over said barrier implant.
Claim 12
Dependent Claim
209 words
An image sensor comprising: an imaging region which includes a substrate of semiconductor material, said region including means in said material for accumulating charge carriers and for transferring said charge carriers from said region; at least two CCD shift registers arranged in a side-by-side relationship adjacent said region, a first shift register having a series of storage regions for receiving said charge carriers from said region and a second shift register which is adapted to receive said charge carriers from every other storage region in said first shift register; means for controlling the transfer of said charge carriers from said first shift register to the second shift register, said controlling means comprising a transfer region in said semiconductor material adjacent every other storage region of said first shift register and means in said semiconductor material adjacent the remainder of said storage regions for blocking the transfer of said charge carriers from said first shift register to said second shift register, each of said transfer regions having a barrier implant therein; means for effecting the transfer of charge carriers from said first shift register to the second shift register; and means for clocking said shift registers in unison to transfer said charge carriers from said registers to an output circuit.
Claim 13
Dependent Claim
209 words
An image sensor comprising: an imaging region which includes a substrate of semiconductor material, said region including means in said material for accumulating charge carriers and for transferring said charge carriers from said region; at least two CCD shift registers arranged in a side-by-side relationship adjacent said region, a first shift register having a series of storage regions for receiving said charge carriers from said region and a second shift register which is adapted to receive said charge carriers from every other storage region in said first shift register; means for controlling the transfer of said charge carriers from said first shift register to the second shift register, said controlling means comprising a transfer region in said semiconductor material adjacent every other storage region of said first shift register and means in said semiconductor material adjacent the remainder of said storage regions for blocking the transfer of said charge carriers from said first shift register to said second shift register, each of said transfer regions having a barrier implant therein; means for effecting the transfer of charge carriers from said first shift register to the second shift register; and means for clocking said shift registers in unison to transfer said charge carriers from said registers to an output circuit.
Claim 14
Dependent Claim
21 words
An image sensor, as defined in claim 11, wherein each of said transfer regions is wider than an adjacent storage region.
Claim 15
Dependent Claim
106 words
An image sensor comprising: an imaging region which includes a substrate of semiconductor material, said region including means in said material for accumulating charge carriers and vertical CCD's for transferring said charge carriers from said region; a first horizontal CCD arranged adjacent said imaging region having a series of storage regions for receiving said charge carriers from said vertical CCD's; and means for controlling the transfer of said charge carriers from said vertical CCD's to said horizontal CCD, said controlling means including single transfer gates adjacent some of said vertical CCD's and a pair of transfer gates adjacent each of the remainder of said vertical CCD's.
Claim 16
Dependent Claim
106 words
An image sensor comprising: an imaging region which includes a substrate of semiconductor material, said region including means in said material for accumulating charge carriers and vertical CCD's for transferring said charge carriers from said region; a first horizontal CCD arranged adjacent said imaging region having a series of storage regions for receiving said charge carriers from said vertical CCD's; and means for controlling the transfer of said charge carriers from said vertical CCD's to said horizontal CCD, said controlling means including single transfer gates adjacent some of said vertical CCD's and a pair of transfer gates adjacent each of the remainder of said vertical CCD's.
Claim 17
Dependent Claim
63 words
An image sensor, as defined in claim 13, wherein said horizontal CCD includes a first set of electrodes which are operable in said single transfer gates and in one of said transfer gates in each of said pair of transfer gates, and a second set of electrodes which are operable in the other transfer gate in each of said pair of transfer gates.
Claim 18
Dependent Claim
20 words
An image sensor, as defined in claim 14, wherein each of said transfer gates has a barrier implant associated therewith.
Claim 19
Dependent Claim
19 words
An image sensor, as defined in claim 15, wherein a second horizontal CCD is arranged adjacent said horizontal CCD.
References Cited (Backward Citations)
JPS5685980A
Cited
US4559550A
Cited
US4694316A
Cited
US4774586A
Cited
US4750042A
Cited
US4837630A
Cited
US4807037A
Cited
US4987466A
Cited
US4908518A
Cited
US4949183A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-08-12 | 1995-02-11 | 1995-08-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-08-12 | 1999-02-11 | 1999-08-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-08-12 | 2003-02-11 | 2003-08-13 | $7700.00 | Window Closed / Lapsed |