US5040049A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and method of manufacturing a semiconductor device
Assignee: US Philips Corp
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Filing: 1989-12-12
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Granted: 1991-08-13
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Expires: 2009-12-12
Abstract
Abstract The invention relates to a semiconductor device comprising a silicon body (1) provided with a conductor pattern (4, 5) consisting of a contact layer (4) and an aluminium layer (5). Contact layers (4), such as those of hafnium, titanium and zirconium, are reactive when they are in contact both with silicon and with aluminum. The silicon body (1) is contacted with a conductor pattern (2, 3), which forms a barrier with respect to silicon migration and the conductor pattern (2, 3) is contacted with the aforementioned conductor pattern (4, 5).
Inventors
- 👤 Ivo J. M. M. Raaijmakers
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 15:26
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
113 words
A semiconductor device comprising (a) a silicon body having at least one side (b) a first conductor pattern layer adjoining exposed portions of said one side of said silicon body; said first conductor pattern layer forming a barrier to prevent migration of silicon from said silicon body, and (c) at least one second conductor layer pattern disposed on said first conductor pattern layer at a side away from said silicon body, said second conductor layer pattern consisting of a contact layer contacting said first conductor layer pattern and an overlying layer of an aluminum alloy layer disposed on said contact layer, said contact layer being at least one of hafnium, titanium and zirconium.
Claim 2
Dependent Claim
113 words
A semiconductor device comprising (a) a silicon body having at least one side (b) a first conductor pattern layer adjoining exposed portions of said one side of said silicon body; said first conductor pattern layer forming a barrier to prevent migration of silicon from said silicon body, and (c) at least one second conductor layer pattern disposed on said first conductor pattern layer at a side away from said silicon body, said second conductor layer pattern consisting of a contact layer contacting said first conductor layer pattern and an overlying layer of an aluminum alloy layer disposed on said contact layer, said contact layer being at least one of hafnium, titanium and zirconium.
Claim 3
Dependent Claim
18 words
A semiconductor device according to claim 1, wherein said first conductor pattern layer consists of a tungsten layer.
Claim 4
Dependent Claim
23 words
A semiconductor device according to claim 2, wherein said contact layer of said at least one second conductor layer pattern consists of hafnium.
Claim 5
Dependent Claim
39 words
A semiconductor device according to claim 2, wherein a plurality of second conductor layer patterns are disposed over said first conductor pattern layer, and wherein each of said plurality consists of a hafnium contact layer and an aluminum layer.
Claim 6
Dependent Claim
30 words
A semiconductor device according to claim 1, wherein said first conductor pattern layer consists of a first layer containing a titanium compound and a second layer containing an aluminum compound.
Claim 7
Dependent Claim
36 words
A semiconductor device according to claim 5, wherein said first layer of said first conductor pattern layer consists of one of a titanium-tungsten alloy containing nitrogen and a double layer of titanium silicide and titanium nitride.
Claim 8
Dependent Claim
20 words
A semiconductor device according to claim 6, wherein said second layer consists of one of aluminum and an aluminum alloy.
Claim 9
Dependent Claim
23 words
A semiconductor device according to claim 5, wherein said contact layer of said at least one second conductor layer pattern consists of hafnium.
Claim 10
Dependent Claim
39 words
A semiconductor device according to claim 5, wherein a plurality of second conductor layer patterns are disposed over said first conductor pattern layer, and wherein each of said plurality consists of a hafnium contact layer and an aluminum layer.
Claim 11
Dependent Claim
20 words
A semiconductor device according to claim 5, wherein said second layer consists of one of aluminum and an aluminum alloy.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-08-12 | 1995-02-11 | 1995-08-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-08-12 | 1999-02-11 | 1999-08-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-08-12 | 2003-02-11 | 2003-08-13 | $7700.00 | Window Closed / Lapsed |