US5040044A
Expired / Lapsed
US
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Compound semiconductor device and method for surface treatment
Assignee: Mitsubishi Chemical Corp
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Filing: 1990-06-20
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Granted: 1991-08-13
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Expires: 2010-06-20
Abstract
Abstract According to the present invention, roughness are formed on the surface of III-V group compound semiconductor to prevent total reflection, and SiNx film is formed on rough surface. This makes it possible to increase external quantum efficiency by surface roughness. Further, bond strength is increased because SiNx film is furnished on the roughness. As the result, the detachment of SiNx film is prevented, moisture resistant property is improved, and service life of LED is extended by preventing oxidation.
Inventors
- 👤 Masahiro Noguchi
- 👤 Toshihiko Ibuka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 12:12
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; H10H20/01; H10H20/011; H10H20/013; H10H20/81; H10H20/819; H10H20/82; H10H20/84; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/6334; H10P14/6336
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
108 words
A compound semiconductor device, comprising: back and front electrodes; a p-active layer; p-clad and n-clad layers sandwiching said p-active layer, all peripheral surfaces of said p-active layer and said p-clad and n-clad layers, except for the attachment of the p-clad layer to the back electrode, having irregular surfaces; a film coating each of said irregular surfaces, said film being composed of an SiNx compound, said SiNx compound being selected from any one of those SiNx compounds having refractive index in a range from 1.8 to 2.0, said film improving luminant output from a front surface of said n-clad layer and protecting said irregular surfaces by preventing oxidation thereof.
Claim 2
Dependent Claim
108 words
A compound semiconductor device, comprising: back and front electrodes; a p-active layer; p-clad and n-clad layers sandwiching said p-active layer, all peripheral surfaces of said p-active layer and said p-clad and n-clad layers, except for the attachment of the p-clad layer to the back electrode, having irregular surfaces; a film coating each of said irregular surfaces, said film being composed of an SiNx compound, said SiNx compound being selected from any one of those SiNx compounds having refractive index in a range from 1.8 to 2.0, said film improving luminant output from a front surface of said n-clad layer and protecting said irregular surfaces by preventing oxidation thereof.
Claim 3
Dependent Claim
22 words
A compound semiconductor device according to claim 1, wherein III-V group compound semiconductor is AlGaAs semiconductor having mixed crystal ratio of 0<AlAs<1.
Claim 4
Dependent Claim
18 words
A compound semiconductor device according to claim 2, wherein SiNx film has thickness of 20 to 500 nm.
Claim 5
Dependent Claim
34 words
A compound semiconductor device according to claim 2, wherein the film thickness of SiNx film is odd-fold multiple of λ/4n (λ is wavelength of emission light, and n is refractive index of SiNx film).
Claim 6
Dependent Claim
17 words
A compound semiconductor device according to claim 2, wherein SiNx film is formed by plasma CVD method.
Claim 7
Dependent Claim
82 words
A surface treatment method of a Group III-V compound semiconductor, comprising the steps of: forming roughness on a surface of the semiconductor by one of a physical method and chemical method, and forming an SiNx film on the roughened said surface by one of a reduced pressure continuous vapor deposition, a plasma continuous vapor deposition, and a sputtering method; said SiNx compound being selected from any one of those SiNx compounds having a refractive index in a range from 1.8 to 2.0.
Claim 8
Dependent Claim
82 words
A surface treatment method of a Group III-V compound semiconductor, comprising the steps of: forming roughness on a surface of the semiconductor by one of a physical method and chemical method, and forming an SiNx film on the roughened said surface by one of a reduced pressure continuous vapor deposition, a plasma continuous vapor deposition, and a sputtering method; said SiNx compound being selected from any one of those SiNx compounds having a refractive index in a range from 1.8 to 2.0.
Claim 9
Dependent Claim
22 words
A surface treatment method according to claim 6, wherein III-V group compound semiconductor is AlGaAs semiconductor having mixed crystal ratio of 0<AlAs<1.
References Cited (Backward Citations)
US4916513A
Cited
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