Voltage threshold measuring circuit

Claim 2

A circuit for determining the voltage threshold of a field-effect device having a pair of spaced-apart regions of a first conductivity type formed in a semiconductor substrate of a second conductivity type, and a gate controlling the conductivity between said spaced-apart regions, said circuit comprising: amplifier means for causing a current to flow through said device and for producing an output voltage directly proportional to said current; circuit means for receiving said output voltage and for generating a feedback voltage at said gate of said device, said feedback voltage being dynamically limited by an RC transient such that said feedback voltage rapidly settles to said voltage threshold of said device.

Claim 3

The circuit of claim 1 further comprising decoding means for coupling said spaced-apart regions to said amplifier means and also for coupling said gate to said circuit means.

Claim 4

The circuit of claim 2 further comprising measuring means for reading said feedback voltage generated at said gate.

Claim 5

The circuit of claim 3 further comprising reset means for resetting said circuit prior to the measurement of another device.

Claim 6

The circuit of claim 4 wherein said field-effect device comprises an n-channel metal-oxide-semiconductor (MOS) device.

Claim 7

The circuit of claim 5 further comprising a buffer means coupled between said circuit means and said gate for presenting a high output impedance to said gate.

Claim 8

The circuit of claim 6 wherein said amplifier means comprises an operational amplifier having an input coupled to one of said spaced-apart regions, an output and a feedback resistor coupled between said output and said input.

Claim 9

The circuit of claim 7 wherein said circuit means comprises: switching circuit means for producing said feedback voltage in response to said output voltage, the amplitude of said feedback voltage being dependent on the current flowing through said switching circuit means; and a current mirror including a resistor and a capacitor for developing said RC transient, said current mirror dynamically limiting said current flowing in said switching circuit means according to said RC transient.

Claim 10

A circuit for determining the voltage threshold of a field-effect semiconductor device having a source region, a drain region and a gate which controls the conductivity between said source and drain regions, said circuit comprising: a node; an operational amplifier means having one input coupled to said drain region and a resistive feedback element for producing a first output voltage proportional to the current flowing through said device; a feedback circuit means for producing a second output voltage at said node in response to said first output voltage, said second output voltage exhibiting correspondence with said first output voltage except that the amplitude of said second output voltage is dynamically limited by an output current which decays according to an RC transient such that when said node is coupled to said gate said second output voltage rapidly settles to said voltage threshold of said device; decoder circuit means for coupling said node to said gate; measuring means for reading said voltage threshold at said gate.

Claim 11

A circuit for determining the voltage threshold of a field-effect semiconductor device having a source region, a drain region and a gate which controls the conductivity between said source and drain regions, said circuit comprising: a node; an operational amplifier means having one input coupled to said drain region and a resistive feedback element for producing a first output voltage proportional to the current flowing through said device; a feedback circuit means for producing a second output voltage at said node in response to said first output voltage, said second output voltage exhibiting correspondence with said first output voltage except that the amplitude of said second output voltage is dynamically limited by an output current which decays according to an RC transient such that when said node is coupled to said gate said second output voltage rapidly settles to said voltage threshold of said device; decoder circuit means for coupling said node to said gate; measuring means for reading said voltage threshold at said gate.

Claim 12

The circuit of claim 9 further comprising a buffer circuit means having a relatively high output impedance for buffering said second output voltage produced at said node from said decoder means.

Claim 13

The circuit of claim 10 further comprising capacitor means for alternatively sinking and sourcing current to said node during settling of said second output voltage.

Claim 14

The circuit of claim 11 wherein said buffer means comprises an operational amplifier configured as a voltage follower.

Claim 15

The circuit of claim 12 further comprising reset means for resetting said circuit prior to the measurement of another device.

Claim 16

The circuit of claim 13 wherein said feedback circuit means comprises a current mirror coupled to an inverter stage, said current mirror including a resistor and a capacitor for developing said RC transient, said inverter stage receiving said first output voltage and producing said second output voltage, said output current flowing through said inverter stage and being controlled by said current mirror.

Claim 17

The circuit of claim 14 wherein said reset means comprises a first and second field-effect transistors coupled across said capacitor means, said first and second field-effect transistors discharging said node and said capacitor means, respectively, upon the application of a predetermined potential to their gates.

Claim 18

The circuit of claim 15 wherein said device comprises an n-channel metal-oxide-semiconductor (MOS) transistor.

Claim 19

A circuit for determining the voltage threshold of an MOS device having a source region, a drain region and a gate, said circuit comprising: an operational amplifier having one input coupled to said drain region and an output, said operational amplifier being configured to include a feedback resistor such that said output produces a first voltage which is directly proportional to the channel current flowing in said MOS device; a switching circuit comprising first and second p-channel devices and first and second n-channel devices all coupled in series in that order, said output being coupled to the gates of said second p-channel and said first n-channel devices, said switching circuit generating a feedback voltage at a node coupled to the drains of said second p-channel and said first n-channel devices, said feedback voltage being dependent on the current flowing in said switching circuit with said current being controlled by the gate voltages on said first p-channel and said second n-channel devices; a control circuit means for generating said gate voltages, said control circuit means including an RC network having an associated RC transient response which exponentially lowers said gate voltages, thereby lowering said current, when said node is coupled to said gate of said MOS device.

Claim 20

A circuit for determining the voltage threshold of an MOS device having a source region, a drain region and a gate, said circuit comprising: an operational amplifier having one input coupled to said drain region and an output, said operational amplifier being configured to include a feedback resistor such that said output produces a first voltage which is directly proportional to the channel current flowing in said MOS device; a switching circuit comprising first and second p-channel devices and first and second n-channel devices all coupled in series in that order, said output being coupled to the gates of said second p-channel and said first n-channel devices, said switching circuit generating a feedback voltage at a node coupled to the drains of said second p-channel and said first n-channel devices, said feedback voltage being dependent on the current flowing in said switching circuit with said current being controlled by the gate voltages on said first p-channel and said second n-channel devices; a control circuit means for generating said gate voltages, said control circuit means including an RC network having an associated RC transient response which exponentially lowers said gate voltages, thereby lowering said current, when said node is coupled to said gate of said MOS device.

Claim 21

The circuit of claim 17 further comprising a capacitor coupled to said node for sinking/sourcing current to/from said node.

Claim 22

The circuit of claim 18 further comprising a voltage follower coupled in series between said node and said gate of said device, said voltage follower presenting a relatively high impedance at said gate such that said voltage threshold may be measured externally at said gate without disturbance to said circuit.

Claim 23

The circuit of claim 19 further comprising reset means for discharging said capacitor and said RC network prior to the measurement of a new MOS device.

Claim 24

The circuit of claim 20 wherein said MOS device comprises an n-channel device.