US5035479A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Device for optical signal processing showing transistor operation
Assignee: Imec
•
Filing: 1989-06-19
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Granted: 1991-07-30
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Expires: 2009-06-19
Abstract
Abstract An optical device provided with a junction region for reflecting radiation to be transmitted in the device, and a gate for controlling the electron density in said junction region, is fast and simple to manufacture.
Inventors
- 👤 Roger A. Vounckx
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 23:52
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/29; G02F1/31; G02F1/313; G02F1/3132; G02F1/3133; G02F1/01; G02F1/015; G02F1/025
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
94 words
A device for optical signal processing comprising: a substrate; a waveguide of doped semiconductor material on top of the substrate, the waveguide having a refractive index which is not greater than the refractive index of the substrate; a junction region between the waveguide and the substrate; and a gate for receiving an electric potential with respect to the substrate is positioned on top of the waveguide, whereby the passage of light through the waveguide in a direction parallel to the junction region is controllable by the application of an electrical potential to the gate.
Claim 2
Independent Claim
94 words
A device for optical signal processing comprising: a substrate; a waveguide of doped semiconductor material on top of the substrate, the waveguide having a refractive index which is not greater than the refractive index of the substrate; a junction region between the waveguide and the substrate; and a gate for receiving an electric potential with respect to the substrate is positioned on top of the waveguide, whereby the passage of light through the waveguide in a direction parallel to the junction region is controllable by the application of an electrical potential to the gate.
Claim 3
Dependent Claim
59 words
A device for optical signal processing as recited in claim 1, wherein the materials chosen for the substrate and the waveguide are selected such that there is a discontinuity between their conducting bands, causing electrons in the waveguide to migrate to the substrate, thereby creating a two-dimensional gas of electrons having a very high mobility in the junction region.
Claim 4
Dependent Claim
27 words
A device for optical signal processing as recited in claim 2, the plasma frequency of the electron gas is preferably higher than the frequency of the light.
Claim 5
Dependent Claim
21 words
A device for optical signal processing as recited in claim 1, wherein the substrate comprises GaAs and the waveguide comprises AlGaAs:Si.
Claim 6
Dependent Claim
36 words
A device for optical signal processing as recited in claim 1, wherein the waveguide consists of non-doped GaAs, the substrate consists of GaAs, and the junction region comprises a double heterojunction structure of GaAs and AlAs:Si.
Claim 7
Dependent Claim
47 words
A device for optical signal processing as recited in claim 1, wherein the waveguide consists of non-doped AlAs, the substrate comprises a non-doped AlAs layer of 1 μm thickness and the junction region between the waveguide and the substrate comprises a double heterojunction of GaAs and AlAs:Si.
Claim 8
Dependent Claim
43 words
A device for optical signal processing as recited in claim 1, wherein the waveguide consists of non-doped SdTe, the substrate comprises CdTe and the junction region between the waveguide and the substrate comprises a double heterojunction between InSb and SdTe doped with Si.
Claim 9
Dependent Claim
84 words
A device for optical signal processing as recited in claim 1, wherein the substrate comprises undoped n-type GaAs, the waveguide undoped p-type GaAs and the junction region comprises an undoped layer of GaAs having a thickness equal to or greater than 100 nm and a doping concentration of 3.10 18 cm -3 <N D <1.10 19 cm -3 , which is directly on top of the substrate and a barrier layer on top of the junction region of approximately 30 nm of undoped AlAs.
References Cited (Backward Citations)
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JPS62190779A
Cited
EP0258530A2
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-07-29 | 1995-01-28 | 1995-07-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-07-29 | 1999-01-28 | 1999-07-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-07-29 | 2003-01-28 | 2003-07-30 | $7700.00 | Window Closed / Lapsed |