US5034068A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Photovoltaic cell having structurally supporting open conductive back electrode structure, and method of fabricating the cell
Assignee: Boeing Co
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Filing: 1990-02-23
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Granted: 1991-07-23
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Expires: 2010-02-23
Abstract
Abstract A photoresponsive layer formed of a semiconductive material such as gallium arsenide has differently doped strata which define a junction therebetween, and generates a photovoltaic effect in response to light incident on a front surface thereof. A front electrode is formed on the front surface. A structurally supporting back electrode open conductive support or grid structure is formed on a back surface of the photoresponsive layer. The support structure is sufficiently thick, approximately 12 to 125 microns, to prevent breakage of the photoresponsive layer, which may be as thin as approximately 25 to 100 microns. The support structure has a pattern selected to prevent propagation of a crack through the photoresponsive layer thereof.
Inventors
- 👤 Gregory S. Glenn
- 👤 David R. Lillington
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 09:06
CPC Classifications
H; H10; H10F; H10F10/00; H10F10/10; H10F10/14; H10F10/144; H10F77/00; H10F77/20; H10F77/206; H10F77/211; H10F77/215; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544; Y10; Y10S; Y10S438/00; Y10S438/977
Claims Analysis
Total Claims: 37
Claim 1
Independent Claim
85 words
A photoelectric device, comprising: a photoresponsive layer having a front light receiving surface, a back surface, and a thickness in the range between about 25 to 100 microns; front electrode means ohmically connected to the front surface; and an open back electrode support structure supporting the back surface of said photoresponsive layer and in ohmic connection therewith, said support structure having a thickness in the range between about 12 to 125 microns thick and being sufficiently strong as to minimize breakage of the photoresponsive layer.
Claim 2
Dependent Claim
85 words
A photoelectric device, comprising: a photoresponsive layer having a front light receiving surface, a back surface, and a thickness in the range between about 25 to 100 microns; front electrode means ohmically connected to the front surface; and an open back electrode support structure supporting the back surface of said photoresponsive layer and in ohmic connection therewith, said support structure having a thickness in the range between about 12 to 125 microns thick and being sufficiently strong as to minimize breakage of the photoresponsive layer.
Claim 3
Dependent Claim
40 words
A device as in claim 1, in which the photoresponsive layer comprises a semiconductor material having differently doped strata which define a junction therebetween, the photoresponsive layer generating a photovoltaic effect in response to light incident on the front surface.
Claim 4
Dependent Claim
16 words
A device as in claim 1, in which the support structure has a rectangular grid pattern.
Claim 5
Dependent Claim
17 words
A device as in claim 1, in which the support structure has a diamond shaped grid pattern.
Claim 6
Dependent Claim
15 words
A device as in claim 1, in which the support structure has a zig-zag pattern.
Claim 7
Dependent Claim
15 words
A device as in claim 1, in which the support structure has a serpentine pattern.
Claim 8
Dependent Claim
18 words
A device as in claim 1, in which the support structure has a crack resisting peripheral border portion.
Claim 9
Dependent Claim
27 words
A device as in claim 1, in which the support structure is further formed with at least one interconnect attachment pad for interconnection with an external circuit.
Claim 10
Dependent Claim
44 words
A device as in claim 1, in which the front electrode means comprises at least one front interconnect attachment pad for interconnection with an external circuit, the support structure being further formed with a support pad aligned with each front interconnect attachment pad respectively.
Claim 11
Dependent Claim
27 words
A device as in claim 12, in which the photoresponsive layer comprises a material selected from the group consisting of Si, GaAs, GaSb, AlGaAs, Ge, and InP.
Claim 12
Dependent Claim
31 words
A device as in claim 1, in which the support structure comprises a metal material selected from the group consisting of nickel, silver, copper, aluminum, titanium, palladium, and any combination thereof.
Claim 13
Dependent Claim
15 words
A device as in claim 1, in which the support structure comprises a metal material.
Claim 14
Dependent Claim
26 words
A device as in claim 1, in which the thickness of the photoresponsive layer is reduced from an initial value to a final value by grinding.
Claim 15
Dependent Claim
26 words
A device as in claim 1, in which the thickness of the photoresponsive layer is reduced from an initial value to a final value by etching.
Claim 16
Dependent Claim
24 words
A device as in claim 1, in which the support structure is sufficiently strong to prevent propagation of a crack through the photoresponsive layer.
Claim 17
Dependent Claim
15 words
A device as in claim 1, in which the support structure is formed by photolithography.
Claim 18
Dependent Claim
18 words
A device as in claim 1, in which the support structure is formed by evaporation through a mask.
Claim 19
Independent Claim
96 words
A method of fabricating a photoelectric device, comprising the steps of: (a) providing a photoresponsive layer having a front light receiving surface, a back surface, and an initial thickness value; (b) forming a structurally supporting back electrode open conductive support structure to a thickness of about 12 to 125 microns on the back surface in ohmic connection therewith; and (c) reducing the thickness of the photoresponsive layer from said initial thickness value to a final value between about 25 to 100 microns, said support structure being sufficiently strong as to minimize breakage of the photoresponsive layer.
Claim 20
Independent Claim
96 words
A method of fabricating a photoelectric device, comprising the steps of: (a) providing a photoresponsive layer having a front light receiving surface, a back surface, and an initial thickness value; (b) forming a structurally supporting back electrode open conductive support structure to a thickness of about 12 to 125 microns on the back surface in ohmic connection therewith; and (c) reducing the thickness of the photoresponsive layer from said initial thickness value to a final value between about 25 to 100 microns, said support structure being sufficiently strong as to minimize breakage of the photoresponsive layer.
Claim 21
Dependent Claim
30 words
A method as in claim 18, further comprising the step, performed between steps (a) and (b), of: (c) forming front electrode means on the front surface in ohmic connection therewith.
Claim 22
Dependent Claim
28 words
A method as in claim 18, in which step (c) comprises reducing the thickness of the photoresponsive layer from said initial value to said final value by grinding.
Claim 23
Dependent Claim
28 words
A method as in claim 18, in which step (c) comprises reducing the thickness of the photoresponsive layer from said initial value to said final value by etching.
Claim 24
Dependent Claim
32 words
A method as in claim 18, in which step (a) comprises providing the photoresponsive layer as including a material selected from the group consisting of Si, GaAs, Ge, InP, GaSb, and AlGaAs.
Claim 25
Dependent Claim
36 words
A method as in claim 18, in which step (b) comprises forming the support structure as including a metal material selected from the group consisting of nickel, silver, copper, aluminum, titanium, palladium, and any combination thereof.
Claim 26
Dependent Claim
20 words
A method as in claim 18, in which step (b) comprises forming the support structure as including a metal material.
Claim 27
Dependent Claim
20 words
A method as in claim 18, in which step (b) comprises forming the support structure in a rectangular grid pattern.
Claim 28
Dependent Claim
21 words
A method as in claim 18, in which step (b) comprises forming the support structure in a diamond shaped grid pattern.
Claim 29
Dependent Claim
19 words
A method as in claim 18, in which step (b) comprises forming the support structure in a zig-zag pattern.
Claim 30
Dependent Claim
19 words
A method as in claim 18, in which step (b) comprises forming the support structure in a serpentine pattern.
Claim 31
Dependent Claim
22 words
A method as in claim 18, in which step (b) further comprises forming a crack resisting peripheral border around the support structure.
Claim 32
Dependent Claim
29 words
A method as in claim 18, in which step (b) further comprises forming the support structure with at least one interconnect attachment pad for interconnection with an external circuit.
Claim 33
Dependent Claim
100 words
A method as in claim 18, further comprising the step, performed between steps (a) and (b), of: (c) forming front electrode means on the front surface in ohmic connection therewith; step (b) further including forming the support structure with a support pad aligned with a position on which a front interconnect attachment pad is to be formed on the front surface; the method further comprising the step, performed after step (b), of: (d) forming a front interconnect attachment pad for interconnection with an external circuit in said position on the front surface in ohmic connection with the front electrode means.
Claim 34
Dependent Claim
21 words
A method as in claim 18, in which step (b) comprises forming the support structure on the back surface by photolithography.
Claim 35
Dependent Claim
24 words
A method as in claim 18, in which step (b) comprises forming the support structure on the back surface by evaporation through a mask.
Claim 36
Dependent Claim
65 words
A device as in claim 18, in which: step (a) comprises providing the photoresponsive layer as including a semiconductive material; the process further comprising the step, performed between steps (a) and (b), of: (c) forming differently doped strata in the semiconductive material which define a junction therebetween, whereby the doped semiconductive material generates a photovoltaic effect in response to light incident on the front surface.
Claim 37
Dependent Claim
38 words
A device as in claim 18, in which steps (a) and (b) in combination comprise forming the photoresponsive layer and support structure as having thicknesses which are less than approximately one order of magnitude different from each other.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-07-22 | 1995-01-21 | 1995-07-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-07-22 | 1999-01-21 | 1999-07-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-07-22 | 2003-01-21 | 2003-07-23 | $7700.00 | Window Closed / Lapsed |