US5032888A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Conductivity modulation buried gate trench type MOSFET
Assignee: Fuji Electric Co Ltd
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Filing: 1990-07-23
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Granted: 1991-07-16
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Expires: 2010-07-23
Abstract
Abstract A conductivity modulation MOSFET with two base layers formed over a drain layer. A trench with a lower portion and an upper portion is formed in the second base layer. The lower portion of the trench has a fixed width, and the upper portion of the trench has a steadily increasing width relative to the lower portion. A gate is placed in the lower portion of the trench, while the source regions are formed in the second base region alongside the side walls of the upper trench portion.
Inventors
- 👤 Yasukazu Seki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 06:58
CPC Classifications
H; H10; H10D; H10D12/00; H10D12/411; H10D12/441; H10D12/461; H10D12/481; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/512; H10D64/513
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
146 words
A conductivity modulation MOSFET, comprising: a drain layer of a first conductivity type; a first base layer of a second conductivity type formed on the drain layer; a second base layer of the first conductivity type formed on the first base layer; a trench formed in the second base layer and reaching the first base layer, the trench having a lower portion and an upper portion, the lower portion of the trench having a fixed width and the upper portion of the trench having a steadily increasing width relative to the lower portion; a source layer of the second conductivity type formed in the second base layer adjacent to the upper portion of the trench; a gate exclusively in the lower portion of the trench; and an insulating film in the lower portion of the trench between the gate and the side walls of the trench.
Claim 2
Dependent Claim
146 words
A conductivity modulation MOSFET, comprising: a drain layer of a first conductivity type; a first base layer of a second conductivity type formed on the drain layer; a second base layer of the first conductivity type formed on the first base layer; a trench formed in the second base layer and reaching the first base layer, the trench having a lower portion and an upper portion, the lower portion of the trench having a fixed width and the upper portion of the trench having a steadily increasing width relative to the lower portion; a source layer of the second conductivity type formed in the second base layer adjacent to the upper portion of the trench; a gate exclusively in the lower portion of the trench; and an insulating film in the lower portion of the trench between the gate and the side walls of the trench.
Claim 3
Dependent Claim
22 words
A conductivity modulation MOSFET as claimed in claim 1, further comprising a second insulating layer filling the upper portion of the trench.
Claim 4
Dependent Claim
30 words
A conductivity modulation MOSFET as claimed in claim 2, wherein the source adjacent the upper portion of the trench extends to and only to the lower portion of the trench.
Claim 5
Dependent Claim
46 words
A conductivity modulation MOSFET as claimed in claim 3, further comprising a second source layer of the second conductivity type formed in the second base layer adjacent to the upper portion of the trench on the opposite side of the trench as the first source layer.
Claim 6
Dependent Claim
164 words
A conductivity modulation MOSFET, comprising: a drain layer of a first conductivity type; a first base layer of a second conductivity type having a horizontal upper surface formed on the drain layer; a second base layer of the first conductivity type formed on the horizontal upper surface of the first base layer; a trench formed in the second base layer and reaching the first base layer, the trench having a lower portion and an upper portion, the lower portion of the trench having vertical side walls and the upper portion of the trench having side walls extending outward from the vertical side walls of the lower portion of the trench; a source layer of the second conductivity type formed in the second base layer adjacent to the upper portion of the trench; a gate exclusively in the lower portion of the trench; and a second insulating film in the lower portion of the trench between the gate and the side walls of the trench.
Claim 7
Dependent Claim
164 words
A conductivity modulation MOSFET, comprising: a drain layer of a first conductivity type; a first base layer of a second conductivity type having a horizontal upper surface formed on the drain layer; a second base layer of the first conductivity type formed on the horizontal upper surface of the first base layer; a trench formed in the second base layer and reaching the first base layer, the trench having a lower portion and an upper portion, the lower portion of the trench having vertical side walls and the upper portion of the trench having side walls extending outward from the vertical side walls of the lower portion of the trench; a source layer of the second conductivity type formed in the second base layer adjacent to the upper portion of the trench; a gate exclusively in the lower portion of the trench; and a second insulating film in the lower portion of the trench between the gate and the side walls of the trench.
Claim 8
Dependent Claim
25 words
A conductivity modulation MOSFET as claimed in claim 5, wherein the horizontal upper surface of the first base layer is the bottom of the trench.
Claim 9
Dependent Claim
30 words
A conductivity modulation MOSFET as claimed in claim 6, wherein the source adjacent the upper portion of the trench extends to and only to the lower portion of the trench.
Claim 10
Dependent Claim
22 words
A conductivity modulation MOSFET as claimed in claim 7, further comprising a second insulating layer filling the upper portion of the trench.
Claim 11
Dependent Claim
46 words
A conductivity modulation MOSFET as claimed in claim 8, further comprising a second source layer of the second conductivity type formed in the second base layer adjacent to the upper portion of the trench on the opposite side of the trench as the first source layer.
Claim 12
Dependent Claim
168 words
A conductivity modulation MOSFET, comprising: a drain layer of a first conductivity type; a buffer layer formed on the drain layer; a first base layer of a second conductivity type formed on the drain layer; a second base layer of the first conductivity type formed on the first base layer; a trench formed in the second base layer and reaching the first base layer, the trench having a lower portion and an upper portion, the lower portion of the trench having a fixed width and the upper portion of the trench having a steadily increasing width relative to the lower portion; a source layer of the second conductivity type formed in the second base layer adjacent to the upper portion of the trench; a gate exclusively in the lower portion of the trench; and an insulating film in the lower portion of the trench between the gate and the side walls of the trench, the insulating film contacting both the gate and the side walls of the trench.
Claim 13
Dependent Claim
168 words
A conductivity modulation MOSFET, comprising: a drain layer of a first conductivity type; a buffer layer formed on the drain layer; a first base layer of a second conductivity type formed on the drain layer; a second base layer of the first conductivity type formed on the first base layer; a trench formed in the second base layer and reaching the first base layer, the trench having a lower portion and an upper portion, the lower portion of the trench having a fixed width and the upper portion of the trench having a steadily increasing width relative to the lower portion; a source layer of the second conductivity type formed in the second base layer adjacent to the upper portion of the trench; a gate exclusively in the lower portion of the trench; and an insulating film in the lower portion of the trench between the gate and the side walls of the trench, the insulating film contacting both the gate and the side walls of the trench.
Claim 14
Dependent Claim
22 words
A conductivity modulation MOSFET as claimed in claim 10, further comprising a second insulation layer filling the upper portion of the trench.
Claim 15
Dependent Claim
30 words
A conductivity modulation MOSFET as claimed in claim 11, wherein the source adjacent the upper portion of the trench extends to and only to the lower portion of the trench.
Claim 16
Dependent Claim
46 words
A conductivity modulation MOSFET as claimed in claim 12, further comprising a second source layer of the second conductivity type formed in the second base layer adjacent to the upper portion of the trench on the opposite side of the trench as the first source layer.
Claim 17
Dependent Claim
29 words
A conductivity MOSFET as claimed in claim 2, further comprising a source electrode formed over the second base layer, the source electrode in electrical contact with the source layer.
Claim 18
Dependent Claim
29 words
A conductivity MOSFET as claimed in claim 8, further comprising a source electrode formed over the second base layer, the source electrode in electrical contact with the source layer.
Claim 19
Dependent Claim
29 words
A conductivity MOSFET as claimed in claim 11, further comprising a source electrode formed over the second base layer, the source electrode in electrical contact with the source layer.
References Cited (Backward Citations)
US4833516A
Cited
US4967245A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-07-15 | 1995-01-14 | 1995-07-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-07-15 | 1999-01-14 | 1999-07-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-07-15 | 2003-01-14 | 2003-07-16 | $7700.00 | Window Closed / Lapsed |