US5032220A
Expired / Lapsed
US
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Manufacturing method of frequency doubler
Assignee: Panasonic Holdings Corp
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Filing: 1990-02-09
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Granted: 1991-07-16
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Expires: 2010-02-09
Abstract
Abstract When fabricating an optical wavelength by proton exchange method on a substrate of LiNb x Ta 1-x O 3 (0≦x≦1), by using Ta 2 O 5 as the protective mask, the edge of the mask becomes smooth and diffusion of impurity from the protective mask into the substrate does not occur during heat treatment, and the propagation loss may be notably reduced. As a result, the efficiency of the frequency doubler may be enhanced.
Inventors
- 👤 Kazuhisa Yamamoto
- 👤 Shigeru Ohmori
- 👤 Tetsuo Taniuchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 09:54
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/35; G02F1/37; G02F1/377; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/13; G02B6/134; G02B6/1345; G02F2202/00; G02F2202/20
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
97 words
A method for manufacturing a frequency doubler comprising the steps of: a. forming Ta 2 O 5 film on an LiNb x Ta l-x O 3 (0≦x≦1) substrate; b. forming an opening region of said Ta 2 O 5 film by dry etching; c. forming a high refractive index layer in the surface of said LiNb x Ta l-x O 3 substrate and under the opening region of said Ta 2 O 5 film by proton exchange using said Ta 2 O 3 film as a protective mask; and d. forming an incident portion for fundamental waves
Claim 2
Independent Claim
97 words
A method for manufacturing a frequency doubler comprising the steps of: a. forming Ta 2 O 5 film on an LiNb x Ta l-x O 3 (0≦x≦1) substrate; b. forming an opening region of said Ta 2 O 5 film by dry etching; c. forming a high refractive index layer in the surface of said LiNb x Ta l-x O 3 substrate and under the opening region of said Ta 2 O 5 film by proton exchange using said Ta 2 O 3 film as a protective mask; and d. forming an incident portion for fundamental waves
Claim 3
Dependent Claim
28 words
The manufacturing method of frequency doubler according to claim 1, which also comprises a step for forming an anti-reflection film at the incident portion of the fundamental waves.
Claim 4
Dependent Claim
27 words
The manufacturing method of frequency doubler according to claim 1, wherein the LiNb x Ta l-x O 3 (0≦x≦1) substrate doped with MgO or Nd is used.
Claim 5
Dependent Claim
27 words
The manufacturing method of frequency doubler according to claim 1, wherein the LiNb x Ta l-x O 3 (0≦x≦1) substrate of +Z or -Z board is used.
Claim 6
Dependent Claim
24 words
The manufacturing method of frequency doubler according to claim 1, wherein proton exchange is effected by using an acid mainly composed of phosphoric acid.
Claim 7
Dependent Claim
29 words
The manufacturing method of frequency doubler according to claim 1, wherein Ta 2 O 5 and Ta formed on said Ta 2 O 5 are used as protective mask.
Claim 8
Dependent Claim
29 words
The manufacturing method of frequency doubler according to claim 1, wherein the protective mask made of Ta 2 O 5 is formed by dry etching by CF 4 .
Claim 9
Dependent Claim
20 words
The manufacturing method of frequency doubler according to claim 1, wherein the protective mask width is 2.5 μm or less.
Claim 10
Dependent Claim
38 words
The manufacturing method of frequency doubler according to claim 1, which also comprises a step for processing so as to scatter or absorb the fundamental wave from the laser diode at the exit portion of the optical waveguide.
References Cited (Backward Citations)
US4701008A
Cited
US4547262A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-07-15 | 1995-01-14 | 1995-07-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-07-15 | 1999-01-14 | 1999-07-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-07-15 | 2003-01-14 | 2003-07-16 | $7700.00 | Window Closed / Lapsed |