US5031186A
Expired / Lapsed
US
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Semiconductor laser device
Assignee: Panasonic Holdings Corp
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Filing: 1990-03-15
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Granted: 1991-07-09
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Expires: 2010-03-15
Abstract
Abstract A semiconductive laser device having a resonator which is formed with a dielectric film on at least one end face thereof is described. The dielectric film is in a thickness of at least three times a wavelength in the dielectric film by which the oscillation wavelength becomes very stable.
Inventors
- 👤 Shinichi Takigawa
- 👤 Masahiro Kume
- 👤 Hirokazu Shimizu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 16:03
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/02; H01S5/028
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
68 words
A semiconductive laser device of the type which comprises at least one optical resonator having a dielectric film formed on at least one end face of the resonator from which a laser beam is emitted, said dielectric film having a thickness which is not less than three times a wavelength of the laser beam in the dielectric film whereby the oscillation wavelength of the semiconductive laser is stabilized.
Claim 2
Dependent Claim
68 words
A semiconductive laser device of the type which comprises at least one optical resonator having a dielectric film formed on at least one end face of the resonator from which a laser beam is emitted, said dielectric film having a thickness which is not less than three times a wavelength of the laser beam in the dielectric film whereby the oscillation wavelength of the semiconductive laser is stabilized.
Claim 3
Dependent Claim
17 words
A semiconductive laser device according to claim 1, wherein said dielectric film is made of aluminium oxide.
Claim 4
Dependent Claim
36 words
A semiconductive laser device according to claim 1, wherein said dielectric film is a multi-layered structure wherein at least one layer of the multi-layered structure has a thickness of not less than three times the wavelength.
Claim 5
Dependent Claim
24 words
A semiconductive laser device according to claim 3, wherein said multi-layered structure is a two-layered structure having two layers made of different dielectric materials.
Claim 6
Dependent Claim
23 words
A semiconductive laser device according to claim 4, wherein said two layers are made of Al 2 O 3 and TiZrO 4 .
Claim 7
Dependent Claim
19 words
A semiconductive laser device according to claim 5, wherein the layer of TiZrO 4 directly contact the end face.
Claim 8
Dependent Claim
22 words
A semiconductive laser device according to claim 1, further comprising another dielectric film formed on the other end face of said resonator.
Claim 9
Dependent Claim
22 words
A semiconductive laser device according to claim 7, wherein the dielectric film formed on the opposite end faces has a multi-layered structure.
Claim 10
Dependent Claim
45 words
A semiconductive laser device according to claim 1, wherein two resonators are provided and have a dielectric film on a beam emission end face of each resonator in such a way that the thicknesses of the respective dielectric films are substantially equal to each other.
Claim 11
Dependent Claim
76 words
A semiconductive laser device of the type which comprises a plurality of optical resonators at least one of which has a dielectric film formed on at least one end face of the at least one resonator from which a laser beam is emitted, said dielectric film having a thickness which is not less than three times a wavelength of the laser beam in the dielectric film whereby the oscillation wavelength of the semiconductive laser is stabilized.
Claim 12
Dependent Claim
76 words
A semiconductive laser device of the type which comprises a plurality of optical resonators at least one of which has a dielectric film formed on at least one end face of the at least one resonator from which a laser beam is emitted, said dielectric film having a thickness which is not less than three times a wavelength of the laser beam in the dielectric film whereby the oscillation wavelength of the semiconductive laser is stabilized.
Claim 13
Dependent Claim
38 words
A semiconductive laser device according to claim 10, wherein the plurality of the optical resonators have, respectively, on at least one beam emission end face dielectric films having different thicknesses of not less than three times the wavelength.
References Cited (Backward Citations)
JPS62230076A
Cited
JPS62260381A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-07-08 | 1995-01-07 | 1995-07-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-07-08 | 1999-01-07 | 1999-07-09 | $3760.00 | Window Closed / Lapsed |
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