US5030549A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fine pattern forming method
Assignee: Panasonic Holdings Corp
•
Filing: 1989-06-26
•
Granted: 1991-07-09
•
Expires: 2009-06-26
Abstract
Abstract Provided is a method for forming fine pattern free from shear of pattern caused by charging and high in dry etch resistance by using a high molecular organic film containing an organometallic complex or a metallic salt in single-layer or multi-layer resist process and treating the surface of this film with a reducing agent to form a metallic layer on the surface.
Inventors
- 👤 Kazuhiko Hashimoto
- 👤 Taichi Koizumi
- 👤 Kenji Kawakita
- 👤 Noboru Nomura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 16:15
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/039; G03F7/0047; G03F7/09; G03F7/093
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
112 words
A method for forming a fine pattern which comprises the steps of coating an organic polymer solution containing an organometallic complex or a metallic salt selected from the group consisting of NiCl 2 , CuCl 2 , and CoCl 2 on a semiconductor substrate, heat treating the solution and then treating the resulting high molecular organic film with a reducing agent to form a metallic layer in a surface portion of the film; coating a resist on said film and heat treating the resist; writing a pattern on the resulting resist film and developing the pattern; and subjecting said high molecular organic film to etching using said resist pattern as a mask.
Claim 2
Independent Claim
112 words
A method for forming a fine pattern which comprises the steps of coating an organic polymer solution containing an organometallic complex or a metallic salt selected from the group consisting of NiCl 2 , CuCl 2 , and CoCl 2 on a semiconductor substrate, heat treating the solution and then treating the resulting high molecular organic film with a reducing agent to form a metallic layer in a surface portion of the film; coating a resist on said film and heat treating the resist; writing a pattern on the resulting resist film and developing the pattern; and subjecting said high molecular organic film to etching using said resist pattern as a mask.
Claim 3
Independent Claim
80 words
A method for forming fine pattern which comprises the steps of coating a resist solution containing an organometallic complex or a metallic salt selected from the group consisting of NiCl 2 , CuCl 2 and CoCl 2 on a semiconductor substrate and heat treating the resulting resist film; and writing a pattern on said resist film, developing the pattern and then treating the pattern with a reducing agent to form a metallic layer in a surface portion of the film.
Claim 4
Independent Claim
80 words
A method for forming fine pattern which comprises the steps of coating a resist solution containing an organometallic complex or a metallic salt selected from the group consisting of NiCl 2 , CuCl 2 and CoCl 2 on a semiconductor substrate and heat treating the resulting resist film; and writing a pattern on said resist film, developing the pattern and then treating the pattern with a reducing agent to form a metallic layer in a surface portion of the film.
Claim 5
Independent Claim
110 words
A method for forming fine pattern which comprises the steps of coating a high molecular organic film on a semiconductor substrate and heat treating the film; coating a resist solution containing an organometallic complex or a metallic salt selected from the group consisting of NiCl 2 , CuCl 2 and CoCl 2 on said high molecular organic film and heat treating the film; writing a pattern on said resist film, developing the pattern and then treating the pattern with a reducing agent to form a metallic layer in a surface portion of the film; and subjecting said high molecular organic film to etching using said resist pattern as a mask.
Claim 6
Independent Claim
110 words
A method for forming fine pattern which comprises the steps of coating a high molecular organic film on a semiconductor substrate and heat treating the film; coating a resist solution containing an organometallic complex or a metallic salt selected from the group consisting of NiCl 2 , CuCl 2 and CoCl 2 on said high molecular organic film and heat treating the film; writing a pattern on said resist film, developing the pattern and then treating the pattern with a reducing agent to form a metallic layer in a surface portion of the film; and subjecting said high molecular organic film to etching using said resist pattern as a mask.
Claim 7
Independent Claim
110 words
A method for forming fine pattern which comprises the steps of coating an organic polymer solution containing an organometallic complex or a metallic salt selected from the group consisting of NiCl 2 , CuCl 2 and CoCl 2 on a semiconductor substrate and heat treating the resulting high molecular organic film; coating on the high molecular organic film a resist and heat treating the resist film; writing a pattern on this resist pattern, developing the pattern and then treating the pattern with a reducing agent to form a metallic layer in the surface portion of the film; and subjecting said resist pattern and said high molecular organic film to etching.
Claim 8
Independent Claim
110 words
A method for forming fine pattern which comprises the steps of coating an organic polymer solution containing an organometallic complex or a metallic salt selected from the group consisting of NiCl 2 , CuCl 2 and CoCl 2 on a semiconductor substrate and heat treating the resulting high molecular organic film; coating on the high molecular organic film a resist and heat treating the resist film; writing a pattern on this resist pattern, developing the pattern and then treating the pattern with a reducing agent to form a metallic layer in the surface portion of the film; and subjecting said resist pattern and said high molecular organic film to etching.
References Cited (Backward Citations)
US3885076A
Cited
US4027052A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-07-08 | 1995-01-07 | 1995-07-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-07-08 | 1999-01-07 | 1999-07-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-07-08 | 2003-01-07 | 2003-07-09 | $7700.00 | Window Closed / Lapsed |