US5029322A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Power MOSFET with current-monitoring
Assignee: Siemens AG
•
Filing: 1987-11-10
•
Granted: 1991-07-02
•
Expires: 2007-11-10
Abstract
Abstract A power MOSFET composed of a plurality of individual MOSFETs connected in parallel, wherein an additional sensing MOSFET monitors the current in the power MOSFET. The sensing MOSFET has a surface comparatively smaller than the power MOSFET and is connected in parallel with the power MOSFET with a resistor between the source of the power MOSFET and the source of the sensing MOSFET. The sensing MOSFET and resistor are integrated with an integrated circuit provided for the control of the power MOSFET.
Inventors
- 👤 Josef Einzinger
- 👤 Ludwig Leipold
- 👤 Jenoe Tihanyi
- 👤 Roland Weber
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 18:02
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/66; H10W; H10W90/00; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D62/152
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
103 words
A device comprising: a first semiconductor body having a top surface and including a power MOSFET of the type having a plurality of individual MOSFETs coupled in parallel; and a second semiconductor body having a top surface wherein an integrated circuit for controlling the power MOSFET is formed, and wherein at least one sensing MOSFET, and a resistor are formed, the sensing MOSFET being coupled in series with the resistor, the sensing MOSFET and resistor being coupled in parallel with the power MOSFET the resistor being coupled in series between the source of the sensing MOSFET and the source of the power MOSFET.
Claim 2
Independent Claim
103 words
A device comprising: a first semiconductor body having a top surface and including a power MOSFET of the type having a plurality of individual MOSFETs coupled in parallel; and a second semiconductor body having a top surface wherein an integrated circuit for controlling the power MOSFET is formed, and wherein at least one sensing MOSFET, and a resistor are formed, the sensing MOSFET being coupled in series with the resistor, the sensing MOSFET and resistor being coupled in parallel with the power MOSFET the resistor being coupled in series between the source of the sensing MOSFET and the source of the power MOSFET.
Claim 3
Dependent Claim
23 words
The device of claim 1 further comprising means for mounting the second semiconductor body on the top surface of the first semiconductor body.
Claim 4
Dependent Claim
38 words
The device of claim 1 further comprising a housing wherein both semiconductor bodies are arranged within the housing and the resistor and sensing MOSFET are coupled in parallel with the power MOSFET by leads located within the housing.
Claim 5
Dependent Claim
38 words
The device of claim 2 further comprising a housing wherein both semiconductor bodies are arranged within the housing and the resistor and sensing MOSFET are coupled in parallel with the power MOSFET by leads located within the housing.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-07-01 | 1994-12-31 | 1995-07-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-07-01 | 1998-12-31 | 1999-07-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-07-01 | 2002-12-31 | 2003-07-02 | $7700.00 | Window Closed / Lapsed |