US5029128A
Expired / Lapsed
US
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Semiconductor memory device with ferroelectric capacitor cells with a plate to which a mid-level voltage is applied
Assignee: Toshiba Corp
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Filing: 1989-09-25
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Granted: 1991-07-02
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Expires: 2009-09-25
Abstract
Abstract A semiconductor memory device includes bit line pairs including first and second bit lines to be selectively set at a first logic level or a second logic level, and a first memory cell coupled with the first bit line of the bit line pairs. The first memory cell contains a first ferroelectric capacitor with first and second electrode plates, and a first transistor coupled between the first electrode plate of the first ferroelectric capacitor and the first bit line. A potential at the second electrode plate of the first ferroelectric capacitor is set at a mid value between the first and second logic levels. A distance D (cm) between the first and second electrode plates of the first ferroelectric capacitor being selected such that a minimum voltage Et×D to saturate the intensity of polarization of the first ferroelectric capacitor is smaller than the value amounting to substantially half of the difference between the first and second logic levels, where Et indicates a field strength sufficient to saturate the intensity of the polarization of the first ferroelectric capacitor and is expressed in V/cm (volts/centimeter).
Inventors
- 👤 Haruki Toda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 21:55
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/22
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
203 words
A semiconductor memory device comprising: bit line pairs including first and second bit lines to be selectively set at a first logic level corresponding to data "1" or a second logic level corresponding to data "0"; a first memory cell coupled with said first bit line of said bit line pairs, said first memory cell containing a first ferroelectric capacitor with first and second electrode plates, and a first transistor connected between said first electrode plate of said first ferroelectric capacitor and said first bit line, said first transistor transferring data therebetween; plate potential setting means for setting a potential at said second electrode plate of said first ferroelectric capacitor at a mid value between said first and second logic levels; and a distance D (cm) between said first and second electrode plates of said first ferroelectric capacitor being selected such that a minimum voltage Et×D to saturate an intensity of the polarization of said first ferroelectric capacitor is smaller than a voltage amounting to substantially half of the voltage difference between said first and second logic levels, where Et indicates a field strength sufficient to saturate the intensity of the polarization of said first ferroelectric capacitor and is expressed in V/cm (volts/centimeter).
Claim 2
Dependent Claim
203 words
A semiconductor memory device comprising: bit line pairs including first and second bit lines to be selectively set at a first logic level corresponding to data "1" or a second logic level corresponding to data "0"; a first memory cell coupled with said first bit line of said bit line pairs, said first memory cell containing a first ferroelectric capacitor with first and second electrode plates, and a first transistor connected between said first electrode plate of said first ferroelectric capacitor and said first bit line, said first transistor transferring data therebetween; plate potential setting means for setting a potential at said second electrode plate of said first ferroelectric capacitor at a mid value between said first and second logic levels; and a distance D (cm) between said first and second electrode plates of said first ferroelectric capacitor being selected such that a minimum voltage Et×D to saturate an intensity of the polarization of said first ferroelectric capacitor is smaller than a voltage amounting to substantially half of the voltage difference between said first and second logic levels, where Et indicates a field strength sufficient to saturate the intensity of the polarization of said first ferroelectric capacitor and is expressed in V/cm (volts/centimeter).
Claim 3
Dependent Claim
99 words
The semiconductor memory device according to claim 1, in which said first transistor includes a source region and a drain region which are separately formed on a semiconductor substrate, and a gate electrode formed on an insulating layer laid on said substrate, and said first ferroelectric capacitor includes a first conductive layer serving as said first electrode plate and being formed on said substrate so as to be coupled with said source region, a ferroelectric layer formed on said first conductive layer, and a second conductive layer formed on said ferroelectric layer and serving as said second electrode plate.
Claim 4
Dependent Claim
182 words
The semiconductor memory device according to claim 1, further comprising a second memory cell coupled with said second bit line of said bit line pairs, said second memory cell containing a second ferroelectric capacitor with first and second electrode plates, and a second transistor connected between said first electrode plate of said second ferroelectric capacitor and said second bit line, said second transistor transferring data therebetween, and in which the potential at said second electrode plate of said second ferroelectric capacitor is selectively set at a mid value between said first and second logic levels by said plate potential setting means, and a distance D (cm) between said first and second electrode plates of said second ferroelectric capacitor is selected such that a minimum voltage Et×D to saturate the intensity of the polarization of said second ferroelectric capacitor is smaller than a voltage amounting to substantially half the voltage difference between said first and second logic levels, where Et indicates a field strength sufficient to saturate the intensity of the polarization of said second ferroelectric capacitor and is expressed in V/cm (volts/centimeter).
Claim 5
Dependent Claim
198 words
The semiconductor memory device according to claim 3, further comprising a reference potential generating means such that when said first memory cell is selected, said reference potential generating means sets said second bit line at a predetermined reference potential, and when said second memory cell is selected, said reference potential generating means sets said first bit line at said predetermined reference potential, and sense amplifying means for amplifying a potential difference between said first and second bit lines, and sense amplifying means for setting one of said first and second bit lines in said first logic level and the other in said second logic level. claim 1, in which said first transistor includes a source region and a drain region which are separately formed on a semiconductor substrate, and a gate electrode formed on an insulating layer laid on said substrate, and said first ferroelectric capacitor includes a first conductive layer serving as said first electrode plate and being formed on said substrate so as to be coupled with said source region, a ferroelectric layer formed on said first conductive layer, and a second conductive layer formed on said ferroelectric layer and serving as said second electrode plate.
Claim 6
Dependent Claim
115 words
The semiconductor memory device according to claim 1, further comprising a reference potential generating means such that when said first memory cell is selected, said reference potential generating means sets said second bit line at a predetermined reference potential, and sense amplifying means for amplifying a potential difference between said first bit line to be set at a potential in accordance with data read out of said first memory cell and said second bit line to be set at said reference potential by said reference potential generating means, and sense amplifying means for setting one of said first and second bit lines in said first logic level and the other in said second logic level.
Claim 7
Dependent Claim
68 words
The semiconductor memory device according to claim 5, in which said reference potential generated by said reference potential generating means is a mid potential between the potential of said first bit line as set in accordance with date "1" read out of said first memory cell and the potential of said first bit line as set in accordance with data "0" read out of said first memory cell.
Claim 8
Dependent Claim
69 words
The semiconductor memory device according to claim 5, in which said reference potential generating means includes a reference cell coupled with said second bit line, and said reference cell includes first and second ferroelectric capacitors each having first and second electrode plates, and data transfer means being connected between said first electrode plates of said first and second ferroelectric capacitors and said second bit line, and transferring data therebetween.
Claim 9
Dependent Claim
42 words
The semiconductor memory device according to claim 7, in which the capacitance C and electrode plate area A of each said first and second ferroelectric capacitors of said reference cell are half those of said ferroelectric capacitor of said first memory cell.
Claim 10
Dependent Claim
95 words
The semiconductor memory device according to claim 7, in which said second electrode plate of said first ferroelectric capacitor of said reference cell is connected to a selected one of the power source potential supply terminal for supplying said first logic level and the ground potential supply terminal for supplying said second logic level, and said second electrode plate of said second ferroelectric capacitor of said reference cell is connected to the output of said plate potential setting means so as to be set at a mid potential between said first and second logic levels.
Claim 11
Dependent Claim
97 words
The semiconductor memory device according to claim 7, in which said reference potential generating means further includes bit line potential setting means for setting said first and second bit lines at said second logic level before said second bit line is set at said reference potential, and reference data write means for writing reference data into said second ferroelectric capacitor of said reference cell so that the polarity of an electric field retained in said second ferroelectric capacitor of said reference cell is reversed by the potential of said second logic level on said second bit line
Claim 12
Dependent Claim
135 words
The semiconductor memory device according to claim 7, further comprising precharge means for precharging said first and second bit lines at a mid potential between said first and second logic levels, plate potential detecting means for detecting the potential of said second electrode plate of said first ferroelectric capacitor of said first memory cell, and access control means allowing access to said first memory cell when said bit line potential detecting means detects a state wherein said first and second bit lines are precharge to a potential midway between said first and second logic levels and said plate potential detecting means detects a state wherein the potential of said second electrode plate of said first ferroelectric capacitor of said first memory cell is set at a potential midway between said first and second logic levels.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 1994-07-01 | 1994-12-31 | 1995-07-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-07-01 | 1998-12-31 | 1999-07-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-07-01 | 2002-12-31 | 2003-07-02 | $7700.00 | Window Closed / Lapsed |