Method for producing opto-electric transducing element

Claim 2

A process for producing an opto-electric transducing element, comprising the steps of; processing a semiconductor substrate having a first electrically conductive type into a corrugated structure; forming a semiconductor layer having a second electrically conductive type on the face of said substrate; forming a face electrode on a portion of said semiconductor layer having the second electrically conductive type; and forming a back electrode on the back of said substrate; wherein said semiconductor substrate is of a single crystal; wherein processing of said substrate is conducted by use of an anisotropic etching; and wherein the angle formed by the direction of a thin linear pattern of an etching mask for said anisotropic etching together with the direction of an intersection between a slowly etched face and the face of said substrate is more than 0° and less than an arctan {(a thin line width--a line width after etching)/a thin line length}.

Claim 3

A process for producing an opto-electric trnasducing element as set forth in claim 1, wherein the face of said substrate is a (100) face, and said slowly etched is a (111) face.

Claim 4

A process for producing an opto-electric transducing element as set forth in claim 1, wherein the face of said substrate is a (110) face, and said slowly etched face is a (111) face.

Claim 5

A process for producing an opto-electric transducing element as set forth in claim 1, wherein the substrate in which the angle formed by a mark indicative of the crystal orientation together with the true crystal orientation of said substrate is more than 0° and less than an arctan {(a thin line width--a line width after etching)/a thin line length)}.

Claim 6

A process for producing an opto-electric transducing element as set forth in claim 1, wherein said etching mask is formed by use of a photolithography, and an alignment mark is provided on a portion of a photomask, so that the angle formed by the mark indicative of the crystal orientation together with said alignment mark is more than 0° and less than an arctan {(a thin line width--a line width after etching)/a thin line length}.

Claim 7

A process for producing an opto-electric transducing element, comprising the steps of: forming a first etching mask having a thin linear pattern on a face of a single crystal semiconductor substrate having a first electrically conductive type wherein an angle formed by the direction of said thin linear pattern together with the direction of an intersection between a slowly etched face and the face of said substrate is greater than 0° and less than an arctan; forming a second etching mask on the back side of said substrate by forming a thin linear pattern thereon in such a manner that the thin linear pattern of the second etching mask is parallel to, but not overlapping with the thin linear pattern of the first etching mask; processing said substrate into a corrugated form by means of anisotropic etching using the first and the second etching masks; forming an opto-electric transducer by forming a first impurity doped region having a first electrically conductive type on the face of the substrate and a second impurity doped region having a second electrically conductive type which is different from that of said first electrically conductive type; and forming a set of electrodes on said opto-electric transducers connected separately to each of said first and second impurity doped regions.

Claim 8

A process for producing an opto-electric transducing element, comprising the steps of: forming a first etching mask having a thin linear pattern on a face of a single crystal semiconductor substrate having a first electrically conductive type wherein an angle formed by the direction of said thin linear pattern together with the direction of an intersection between a slowly etched face and the face of said substrate is greater than 0° and less than an arctan; forming a second etching mask on the back side of said substrate by forming a thin linear pattern thereon in such a manner that the thin linear pattern of the second etching mask is parallel to, but not overlapping with the thin linear pattern of the first etching mask; processing said substrate into a corrugated form by means of anisotropic etching using the first and the second etching masks; forming an opto-electric transducer by forming a first impurity doped region having a first electrically conductive type on the face of the substrate and a second impurity doped region having a second electrically conductive type which is different from that of said first electrically conductive type; and forming a set of electrodes on said opto-electric transducers connected separately to each of said first and second impurity doped regions.

Claim 9

A process for producing an opto-electric transducing comprising the steps of: forming a first etching mask having a thin linear pattern on the face of a single crystal semiconductor substrate having a first electrically conductive type wherein an angle formed by the direction of said thin linear pattern together with the direction of an intersection between a slowly etched face and the face of said substrate is greater than 0° and less than an arctan; forming a second etching mask on the back side of said substrate by forming a thin linear pattern thereon in such a manner that the thin linear pattern of the second etching mask is parallel to, but not overlapping with the thin linear pattern of the first etching mask; processing said substrate into a corrugated form by means of anisotropic etching using the first and the second etching masks; forming an opto-electric transducer with said corrugated substrate; forming electrode means on said opto-electric transducer, and taking an electric output from said opto-electric transducer.

Claim 10

A process for producing an opto-electric transducing comprising the steps of: forming a first etching mask having a thin linear pattern on the face of a single crystal semiconductor substrate having a first electrically conductive type wherein an angle formed by the direction of said thin linear pattern together with the direction of an intersection between a slowly etched face and the face of said substrate is greater than 0° and less than an arctan; forming a second etching mask on the back side of said substrate by forming a thin linear pattern thereon in such a manner that the thin linear pattern of the second etching mask is parallel to, but not overlapping with the thin linear pattern of the first etching mask; processing said substrate into a corrugated form by means of anisotropic etching using the first and the second etching masks; forming an opto-electric transducer with said corrugated substrate; forming electrode means on said opto-electric transducer, and taking an electric output from said opto-electric transducer.

Claim 11

A process for producing an opto-electric transducing element, comprising the steps of: forming a first etching mask having a thin linear pattern on the face of a single crystal semiconductor substrate having a first electrically conductive type wherein an angle formed by the direction of said thin linear pattern together with the direction of an intersection between a slowly etched face and the face of said substrate is greater than 0° and less than an arctan; forming a second etching mask on the back side of said substrate by forming a thin linear pattern thereon in such a manner that the thin linear pattern of the second etching mask is parallel to, but not overlapping the thin linear pattern of the first etching mask; and processing said substrate into a corrugated form by means of anisotropic etching using the first and the second etching masks.

Claim 12

A process for producing an opto-electric transducing element, comprising the steps of: forming a first etching mask having a thin linear pattern on the face of a single crystal semiconductor substrate having a first electrically conductive type wherein an angle formed by the direction of said thin linear pattern together with the direction of an intersection between a slowly etched face and the face of said substrate is greater than 0° and less than an arctan; forming a second etching mask on the back side of said substrate by forming a thin linear pattern thereon in such a manner that the thin linear pattern of the second etching mask is parallel to, but not overlapping the thin linear pattern of the first etching mask; and processing said substrate into a corrugated form by means of anisotropic etching using the first and the second etching masks.

Claim 13

The process according to claim 8 wherein said etching mask is made from one member selected from the group consisting of a photoresist layer, a silicon oxide layer and silicon nitride layer.