US5022037A
Expired / Lapsed
US
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Semiconductor laser device
Assignee: Sharp Corp
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Filing: 1990-03-08
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Granted: 1991-06-04
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Expires: 2010-03-08
Abstract
Abstract A semiconductor laser device is disclosed which emits laser light from an end facet. The semiconductor laser device comprises a multi-layered structure formed on a semiconductor substrate, the multi-layered structure having an active layer for laser oscillation, and a pair of cleavage planes on the side of the multi-layered structure, wherein a graded-band-gap layer is formed on at least one of the cleavage planes, the graded-band-gap layer having a forbidden band gap which increases gradually with an increase in the distance from the cleavage plane, and the surface of the graded-band-gap layer constituting the end facet.
Inventors
- 👤 Hidenori Kawanishi
- 👤 Hiroshi Hayashi
- 👤 Taiji Morimoto
- 👤 Shinji Kaneiwa
- 👤 Nobuyuki Miyauchi
- 👤 Seiki Yano
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 21:15
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/02; H01S5/028; H01S5/0281; H01S5/0201; H01S5/10; H01S5/16; H01S5/164; H01S5/166
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
80 words
A semiconductor laser device which emits laser light from an end facet, comprising: a multi-layered structure formed on a semiconductor substrate, said multi-layered structure having an active layer for laser oscillation, and a pair of cleavage planes, a graded-band-gap layer formed on at least one of said cleavage planes, said graded-band-gap layer having a forbidden band gap which increases gradually with an increase in distance form said cleavage plane, and the surface of said graded-band-gap layer constituting said end facet.
Claim 2
Dependent Claim
80 words
A semiconductor laser device which emits laser light from an end facet, comprising: a multi-layered structure formed on a semiconductor substrate, said multi-layered structure having an active layer for laser oscillation, and a pair of cleavage planes, a graded-band-gap layer formed on at least one of said cleavage planes, said graded-band-gap layer having a forbidden band gap which increases gradually with an increase in distance form said cleavage plane, and the surface of said graded-band-gap layer constituting said end facet.
Claim 3
Dependent Claim
35 words
A semiconductor laser device according to claim 1, wherein said active layer is made of Ga 1-x Al x As (0≦x≦1) and said graded-band gap layer is made of Ga 1-y Al y As (0≦y≦1).
Claim 4
Dependent Claim
35 words
A semiconductor laser device according to claim 2, wherein the Al mole fraction y of said graded-band-gap layer increases form the cleavage plane to the end facet in accordance with a linear or parabolic distribution.
Claim 5
Dependent Claim
35 words
A semiconductor laser device according to claim 3, wherein the Al mole fraction y at the cleavage plane between the active layer and the graded-band-gap layer is approximately equal to the Al mole fraction x.
Claim 6
Dependent Claim
34 words
A semiconductor laser device according to claim 3, wherein the Al mole fraction y at the cleavage plane between the active layer and the graded-band-gap layer is greater than the Al mole fraction x.
Claim 7
Dependent Claim
34 words
A semiconductor laser device according to claim 3, wherein the Al mole fraction y at the cleavage plane between the active layer and the graded-band-gap layer is smaller than the Al mole fraction x.
Claim 8
Dependent Claim
60 words
A semiconductor laser comprising a cleaved end laser cavity and a light emitting facet thereat including a graded-band-gap semiconductor layer located between the cleaved end laser cavity and said light emitting facet, said graded-band-gap semiconductor layer having a forbidden band gap which increases with an increase in distance from said cleaved end towards said light emitting fact of said layer.
Claim 9
Dependent Claim
60 words
A semiconductor laser comprising a cleaved end laser cavity and a light emitting facet thereat including a graded-band-gap semiconductor layer located between the cleaved end laser cavity and said light emitting facet, said graded-band-gap semiconductor layer having a forbidden band gap which increases with an increase in distance from said cleaved end towards said light emitting fact of said layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-06-03 | 1994-12-03 | 1995-06-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-06-03 | 1998-12-03 | 1999-06-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-06-03 | 2002-12-03 | 2003-06-04 | $7700.00 | Window Closed / Lapsed |