US5021859A
Expired / Lapsed
US
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High-frequency amplifying semiconductor device
Assignee: Toshiba Corp
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Filing: 1989-11-09
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Granted: 1991-06-04
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Expires: 2009-11-09
Abstract
Abstract In a high-frequency amplifying semiconductor device in which a MOS field effect transistor and a bipolar transistor are formed within the same wafer and a source electrode of the MOS field effect transistor is connected to a lead frame by a bonding wire, use is made of a wafer for fabricating the MOS field effect transistor and the bipolar transistor, in which on a semiconductor substrate of P++ type is formed a first epitaxial layer of P or P- type, a buried layer of N+ type is formed in the first epitaxial layer of the first conductivity type and a second epitaxial layer of P type is formed on the buried layer and the first epitaxial layer. The use of such a wafer, which has no P- type Si substrate, allows the source resistance of the MOS field effect transistor to be decreased. The high-frequency amplifying semiconductor device is improved in high-frequency gain and NF.
Inventors
- 👤 Takahiro Ito
- 👤 Bunshiro Yamaki
- 👤 Yoshio Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 21:58
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/40; H10D84/401
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
212 words
A high-frequency amplifying semiconductor device comprising: a semiconductor substrate of a first conductivity type which is heavily doped with impurities; a first epitaxial layer of the first conductivity type formed on said semiconductor substrate of the first conductivity type and containing impurities at a lower concentration than said semiconductor substrate; a buried layer of a second conductivity type formed in said first epitaxial layer of the first conductivity type and heavily doped with impurities; a second epitaxial layer of the first conductivity type formed on said buried layer of the second conductivity type and said first epitaxial layer of the first conductivity type and containing impurities at a lower concentration than said semiconductor substrate of the first conductivity type, a portion of said second epitaxial layer above said buried layer being of second semiconductor type; an MOS field effect transistor formed in said second epitaxial layer of the first conductivity type and having a source electrode connected to a lead frame through a bonding wire; a diode capacitor formed in said second epitaxial layer of the first conductivity type and connected to said source electrode of said MOS field effect transistor; and a bipolar transistor formed in said second conductivity type portion of said second epitaxial layer of the first conductivity type.
Claim 2
Dependent Claim
212 words
A high-frequency amplifying semiconductor device comprising: a semiconductor substrate of a first conductivity type which is heavily doped with impurities; a first epitaxial layer of the first conductivity type formed on said semiconductor substrate of the first conductivity type and containing impurities at a lower concentration than said semiconductor substrate; a buried layer of a second conductivity type formed in said first epitaxial layer of the first conductivity type and heavily doped with impurities; a second epitaxial layer of the first conductivity type formed on said buried layer of the second conductivity type and said first epitaxial layer of the first conductivity type and containing impurities at a lower concentration than said semiconductor substrate of the first conductivity type, a portion of said second epitaxial layer above said buried layer being of second semiconductor type; an MOS field effect transistor formed in said second epitaxial layer of the first conductivity type and having a source electrode connected to a lead frame through a bonding wire; a diode capacitor formed in said second epitaxial layer of the first conductivity type and connected to said source electrode of said MOS field effect transistor; and a bipolar transistor formed in said second conductivity type portion of said second epitaxial layer of the first conductivity type.
Claim 3
Dependent Claim
39 words
A high-frequency amplifying semiconductor device according to claim 1, in which the impurity concentration of said first epitaxial layer of the first conductivity type is in the range from 1×10 15 cm -3 to 6×10 15 cm -3 .
Claim 4
Dependent Claim
33 words
A high-frequency amplifying semiconductor device according to claim 1, in which the thickness of said first epitaxial layer of the first conductivity type is in the range of 25 μm to 35 μm.
Claim 5
Dependent Claim
220 words
A high-frequency amplifying semiconductor device comprising: a semiconductor substrate of a first conductivity type which is heavily doped with impurities; a first epitaxial layer of the first conductivity type formed on said semiconductor substrate of the first conductivity type and containing impurities at a lower concentration than said semiconductor substrate; a buried layer of a second conductivity type formed in said first epitaxial layer of the first conductivity type and heavily doped with impurities; a second epitaxial layer of the first conductivity type formed on said buried layer of the second conductivity type and said first epitaxial layer of the first conductivity type and containing impurities at a concentration which is higher than said first epitaxial layer and lower than said semiconductor substrate of the first conductivity type, a portion of said second epitaxial layer above said buried layer being of second semiconductor type; an MOS field effect transistor formed in said second epitaxial layer of the first conductivity type and having a source electrode connected to a lead frame through a bonding wire; a diode capacitor formed in said second epitaxial layer of the first conductivity type and connected to said source electrode of said MOS field effect transistor; and a bipolar transistor formed in said second conductivity portion of said second epitaxial layer of the first conductivity type.
Claim 6
Dependent Claim
220 words
A high-frequency amplifying semiconductor device comprising: a semiconductor substrate of a first conductivity type which is heavily doped with impurities; a first epitaxial layer of the first conductivity type formed on said semiconductor substrate of the first conductivity type and containing impurities at a lower concentration than said semiconductor substrate; a buried layer of a second conductivity type formed in said first epitaxial layer of the first conductivity type and heavily doped with impurities; a second epitaxial layer of the first conductivity type formed on said buried layer of the second conductivity type and said first epitaxial layer of the first conductivity type and containing impurities at a concentration which is higher than said first epitaxial layer and lower than said semiconductor substrate of the first conductivity type, a portion of said second epitaxial layer above said buried layer being of second semiconductor type; an MOS field effect transistor formed in said second epitaxial layer of the first conductivity type and having a source electrode connected to a lead frame through a bonding wire; a diode capacitor formed in said second epitaxial layer of the first conductivity type and connected to said source electrode of said MOS field effect transistor; and a bipolar transistor formed in said second conductivity portion of said second epitaxial layer of the first conductivity type.
Claim 7
Dependent Claim
39 words
A high-frequency amplifying semiconductor device according to claim 4, in which the impurity concentration of said first epitaxial layer of the first conductivity type is in the range from 3×10 14 cm -3 to 6×10 14 cm -3 .
Claim 8
Dependent Claim
33 words
A high-frequency amplifying semiconductor device according to claim 4, in which the thickness of said first epitaxial layer of the first conductivity type is in the range of 20 μm to 30 μm.
Claim 9
Dependent Claim
245 words
A high-frequency amplifying semiconductor device comprising: a semiconductor substrate of a first conductivity type which is heavily doped with impurities; a first epitaxial layer of the first conductivity type formed on said semiconductor substrate of the first conductivity type and containing impurities at a lower concentration than said semiconductor substrate; a buried layer of a second conductivity type formed in said first epitaxial layer of the first conductivity type and heavily doped with impurities; a buried layer of the first conductivity type formed in said first epitaxial layer of the first conductivity type and heavily doped with impurities; a second epitaxial layer of the first conductivity type formed on said buried layer of the second conductivity type, said buried layer of the first conductivity type and said first epitaxial layer of the first conductivity type and containing impurities at a concentration which is lower than said semiconductor substrate of the first conductivity type, a portion of said second epitaxial layer above said buried layer being of second semiconductor type; an MOS field effect transistor formed in said second epitaxial layer of the first conductivity type and having a source electrode connected to a lead frame through a bonding wire; a diode capacitor formed in said second epitaxial layer of the first conductivity type and connected to said source electrode of said MOS field effect transistor; and a bipolar transistor formed in said second conductivity portion of said second epitaxial layer of the first conductivity type.
Claim 10
Dependent Claim
245 words
A high-frequency amplifying semiconductor device comprising: a semiconductor substrate of a first conductivity type which is heavily doped with impurities; a first epitaxial layer of the first conductivity type formed on said semiconductor substrate of the first conductivity type and containing impurities at a lower concentration than said semiconductor substrate; a buried layer of a second conductivity type formed in said first epitaxial layer of the first conductivity type and heavily doped with impurities; a buried layer of the first conductivity type formed in said first epitaxial layer of the first conductivity type and heavily doped with impurities; a second epitaxial layer of the first conductivity type formed on said buried layer of the second conductivity type, said buried layer of the first conductivity type and said first epitaxial layer of the first conductivity type and containing impurities at a concentration which is lower than said semiconductor substrate of the first conductivity type, a portion of said second epitaxial layer above said buried layer being of second semiconductor type; an MOS field effect transistor formed in said second epitaxial layer of the first conductivity type and having a source electrode connected to a lead frame through a bonding wire; a diode capacitor formed in said second epitaxial layer of the first conductivity type and connected to said source electrode of said MOS field effect transistor; and a bipolar transistor formed in said second conductivity portion of said second epitaxial layer of the first conductivity type.
Claim 11
Dependent Claim
39 words
A high-frequency amplifying semiconductor device according to claim 7, in which the impurity concentration of said first epitaxial layer of the first conductivity type is in the range from 1×10 15 cm -3 to 6×10 15 cm -3 .
Claim 12
Dependent Claim
33 words
A high-frequency amplifying semiconductor device according to claim 7, in which the thickness of said first epitaxial layer of the first conductivity type is in the range of 25 μm to 35 μm.
Claim 13
Dependent Claim
38 words
A high-frequency amplifying semiconductor device according to claim 7, in which the impurity concentration of said buried layer of the first conductivity type is in the range from 1×10 18 cm -3 to 4×10 18 cm -3 .
Claim 14
Dependent Claim
37 words
A high frequency amplifying semiconductor device according to claim 7, comprising said buried layer of the first conductivity type extending through said second epitaxial layer and connected to a source region of said MOS field effect transistor.
Claim 15
Dependent Claim
37 words
A high frequency amplifying semiconductor device according to claim 8, comprising said buried layer of the first conductivity type extending through said second epitaxial layer and connected to a source region of said MOS field effect transistor.
Claim 16
Dependent Claim
37 words
A high frequency amplifying semiconductor device according to claim 9, comprising said buried layer of the first conductivity type extending through said second epitaxial layer and connected to a source region of said MOS field effect transistor.
Claim 17
Dependent Claim
37 words
A high frequency amplifying semiconductor device according to claim 10, comprising said buried layer of the first conductivity type extending through said second epitaxial layer and connected to a source region of said MOS field effect transistor.
References Cited (Backward Citations)
US4831430A
Cited
JPS62122307A
Cited
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