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US5021224A Expired / Lapsed US ⏱️ 0.0 years remaining

Apparatus for growing multicomponents compound semiconductor crystals

Assignee: Fujitsu Ltd
•
Filing: 1986-05-20
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Granted: 1991-06-04
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Expires: 2006-05-20
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Abstract

Abstract A method and apparatus for growing crystals of a more than three multicomponents compound semiconductor from its growth solution in which a source material containing at least one solute element is immersed and dissolved in the growth solution by conducting DC electric current from a current supplying electrode immersed in the growth solution through the growth solution to the source material, and thus a desired composition of the growth solution can be constantly maintained. As a result, the composition of the grown crystals of the multicomponents compound semiconductor can be also controlled to a desired proportion.

Inventors

  • 👤 Kazuo Nakajima

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-05 13:21
CPC Classifications
C; C30; C30B; C30B19/00; C30B19/10; C30B15/00; C30B15/02; C30B15/14; C30B15/18; Y; Y10; Y10T; Y10T117/00; Y10T117/10; Y10T117/1024; Y10T117/1032; Y10T117/1052; Y10T117/1056

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 168 words
An apparatus for growing crystals of a three or more multicomponent compound semiconductor from its growth solution on a seed crystal or substrate, which apparatus comprises a container for said growth solution, a semiconductor seed crystal or substrate disposed within said container, a first electrode, at least one source material each of which contains at least one element which is essential to complete said compound semiconductor, one end of said source material being arranged to be immersed in said growth solution and another end of said source material being connected with said first electrode, and a second electrode arranged to be immersed in said growth solution and arranged to be connected to a source of DC electric current such that DC electric current is conducted from said second electrode, through the growth solution and through said source material to said first electrode, said second electrode being separately disposed from the seed crystal or substrate such that DC electric current is not passed through said seed crystal or substrate.
Claim 2
Independent Claim 168 words
An apparatus for growing crystals of a three or more multicomponent compound semiconductor from its growth solution on a seed crystal or substrate, which apparatus comprises a container for said growth solution, a semiconductor seed crystal or substrate disposed within said container, a first electrode, at least one source material each of which contains at least one element which is essential to complete said compound semiconductor, one end of said source material being arranged to be immersed in said growth solution and another end of said source material being connected with said first electrode, and a second electrode arranged to be immersed in said growth solution and arranged to be connected to a source of DC electric current such that DC electric current is conducted from said second electrode, through the growth solution and through said source material to said first electrode, said second electrode being separately disposed from the seed crystal or substrate such that DC electric current is not passed through said seed crystal or substrate.
Claim 3
Dependent Claim 18 words
An apparatus as stated in claim 1, in which said container is in the form of a boat.
Claim 4
Dependent Claim 21 words
An apparatus as stated in claim 1, in which said source material is a part of a wall of said container.
Claim 5
Dependent Claim 21 words
An apparatus as stated in claim 2, in which said source material is a part of a wall of said container.
Claim 6
Dependent Claim 32 words
An apparatus as stated in claim 1, 2, 3 or 4 in which said second electrode or an electrically conductive material connected therewith is a part of a wall of said container.

References Cited (Backward Citations)

US3086857A Cited
US3058915A Cited
US3600294A Cited
US3948692A Cited
US4133705A Cited
US4186045A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1994-06-03 1994-12-03 1995-06-04 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1998-06-03 1998-12-03 1999-06-04 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2002-06-03 2002-12-03 2003-06-04 $7700.00 Window Closed / Lapsed

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